X-ray studies of defects and thermal vibrations in an organometallic vapor phase epitaxy grown GaN thin film

1997 ◽  
Vol 82 (5) ◽  
pp. 2308-2311 ◽  
Author(s):  
X. Xiong ◽  
S. C. Moss
Keyword(s):  
Thin Film ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray ◽  
Thermal Vibrations

In-situ X-ray studies of organometallic vapor phase epitaxy growth

1995 ◽  
Vol 30 (2-3) ◽  
pp. 99-108 ◽  
Author(s):  
P.H. Fuoss ◽  
D.W. Kisker ◽  
G.B. Stephenson ◽  
S. Brennan
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray

Photoluminescence X-ray Excitation Spectra in Eu-doped GaN Grown by Organometallic Vapor Phase Epitaxy

2011 ◽  
Vol 1342 ◽  
Author(s):  
S. Emura ◽  
K. Higashi ◽  
A. Itadani ◽  
H. Torigoe ◽  
Y. Kuroda ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Resonance Excitation ◽  
Organometallic Vapor Phase Epitaxy ◽  
Excitation Spectra ◽  
Luminescent Center ◽  
X Ray ◽  
Excited Luminescence

ABSTRACTX-ray-excited luminescence of GaN doped with Eu ions as a luminescent center was observed in the wavelength range from 350 nm to 650 nm. Three peaks at 375 nm, 550 nm and 622 nm were found. To survey the mechanism of the photoluminescence due to non-resonance excitation, photoluminescence X-ray excitation spectra are also measured. The mechanism of the luminescence occurrence was briefly discussed based on the model developed by Emura et al.

Growth of CDTE on GaAs and Si Substrates by Organometallic Vapor Phase Epitaxy

1993 ◽  
Vol 318 ◽  
Author(s):  
Ishwara Bhat
Keyword(s):  
Vapor Phase ◽  
Atomic Layer ◽  
Cdte Layer ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality ◽  
X Ray ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Direct Growth

ABSTRACTEpitaxial (100) CdTe layers have been grown by organometallic vapor phase epitaxy (OMVPE) on GaAs and Si substrates. A thin layer of CdTe was first grown by atomic layer epitaxy (ALE) on GaAs substrates followed by thicker CdTe layer by conventional organometallic vapor phase epitaxy (OMVPE). This process resulted in high quality (100) CdTe on GaAs substrates. On Si substrates, direct growth of CdTe resulted in only polycrystalline layers. Hence, a thin Ge buffer layer grown at low temperature followed by an interfacial layer of ZnTe was used to get high quality (100) CdTe on Si. The process developed here eliminates the high temperature (>850°C) deoxidation step generally required when Si substrates are used. The CdTe layers were characterized by X-ray diffraction and optical microscopy. X-ray rocking curve with full width at half maximum (FWHM) of about 260 arcsec has been obtained for a 4 um thick CdTe layer. The results presented demonstrate novel techniques to control the hetero-interfaces in order to grow high quality CdTe on GaAs and Si substrates.

Application of x-ray scattering to the in-situ study of organometallic vapor phase epitaxy

1990 ◽  
Author(s):  
David W. Kisker ◽  
Paul H. Fuoss ◽  
Goullioud Renaud ◽  
K. L. Tokuda ◽  
Sean Brennan ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray ◽  
In Situ Study ◽  
X Ray Scattering ◽  
Ray Scattering
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