AbstractNonpolara-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. Thea-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and thec-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in thea-plane GaN tilt mosaic measured by XRC.
AbstractX-ray double crystal diffractometry provides a means of rapidly characterizing epitaxial structures. Because the technique is rapid and nondestructive and because it yields a wealth of information, rocking curves have been routinely obtained and extensively studied by us. We present here selective results illustrating the typical progression in layer quality which occurs from the initial growth in a reactor to the growth of device quality material.
ABSTRACTInSb1-xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1-xNx up to 0.24.