LATTICE MATCHING IN HgCdTe-CdZnTe HETEROJUNCTIONS

1985 ◽  
Vol 56 ◽  
Author(s):  
T. Maekawa ◽  
T. Saito ◽  
M. Yoshikawa ◽  
H. Takigawa
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Mole Fraction ◽  
Liquid Phase Epitaxy ◽  
Misfit Dislocations ◽  
Lattice Matching ◽  
Original Surface ◽  
Etch Pit

AbstractAn etch pit study has been made on misfit dislocations in (111) HgCdTe-CdZnTe heterojunctions grown by liquid phase epitaxy. It was shown that misfit dislocations were localized at the original surface of the substrate, because Zn diffused into the epilayer during epitaxial growth prevents movement of dislocations. For lattice matching between Hg0 7Cd0.3Te and Cd1−yZnyTe, the optimum ZnTe mole fraction of Cd1−yZnyTe was found to be 2.9%.

Liquid phase epitaxial growth of InP/InGaAsP/InP double‐heterostructure wafers free of misfit dislocations

1983 ◽  
Vol 43 (1) ◽  
pp. 82-84 ◽  
Author(s):  
Susumu Yamazaki ◽  
Kazuo Nakajima ◽  
Satoshi Komiya ◽  
Yutaka Kishi ◽  
Kenzo Akita
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Misfit Dislocations ◽  
Liquid Phase Epitaxial ◽  
Double Heterostructure ◽  
Liquid Phase Epitaxial Growth

Pinning Effect of Misfit Dislocations in YBa2Cu3O7-y Superconducting Film by Liquid Phase Epitaxy

1997 ◽  
pp. 737-740 ◽  
Author(s):  
Tasuku Kitamura ◽  
Satoshi Taniguchi ◽  
Yoshihiro Sugawara ◽  
Yuichi Ikuhara ◽  
Izumi Hirabayashi
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Superconducting Film ◽  
Misfit Dislocations ◽  
Pinning Effect

Evaluation of the Interface Structure During Stranski-Krastanov Growth of GE(SI) on Si (001)

1991 ◽  
Vol 238 ◽  
Author(s):  
M. Albrecht ◽  
H. P. Strunk ◽  
P. O. Hansson ◽  
E. Bauser
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Interface Structure ◽  
Misfit Dislocations ◽  
Heteroepitaxial Growth ◽  
Dislocation Glide ◽  
Transmission Electron ◽  
Half Loop

ABSTRACTThe initial stages of heteroepitaxial growth of Ge0.85 Si0.15 on Si(001) grown from Bi solution (liquid phase epitaxy) are studid by transmission electron microscopy. Stranski-Krastanov growth is observed to take place. After growth of a pseudomorphic Ge0.85 Si0.15 layer of 4 monolayer thickness, islands form and grow pseudomorphically up to a thickness of 30 nm. Then first misfit dislocations form. The formation process of these dislocations is analyzed and discussed in terms of half loop nucleation at the surface and dislocation glide. Evidence for glide on (110) planes is put forward.

Epitaxial growth of single-crystalline-film scintillators based on Tb3+-doped and Tb3+–Ce3+-codoped Gd1–xLuxAlO3 (x = 0–1) mixed perovskites

CrystEngComm ◽  
2019 ◽  
Vol 21 (9) ◽  
pp. 1433-1441 ◽  
Author(s):  
V. Gorbenko ◽  
T. Zorenko ◽  
K. Paprocki ◽  
F. Riva ◽  
P. A. Douissard ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
Single Crystalline ◽  
Crystalline Film ◽  
Crystalline Films ◽  
Single Crystalline Film

The paper is dedicated to the development of scintillating screens based on the single crystalline films of singly Tb3+ and doubly Tb3+–Ce3+ doped Gd1–xLuxAlO3 (x = 0–1) perovskites grown onto YAlO3 substrates using the liquid phase epitaxy method.

Interfacial structures of Y123 and Nd123 films formed on MgO(001) substrates by liquid phase epitaxy

2004 ◽  
Vol 19 (9) ◽  
pp. 2674-2682 ◽  
Author(s):  
J.S. Matsuda ◽  
F. Oba ◽  
T. Murata ◽  
T. Yamamoto ◽  
Y. Ikuhara ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Molecular Orbital ◽  
Liquid Phase Epitaxy ◽  
Molecular Orbital Calculations ◽  
Lattice Matching ◽  
Transmission Electron ◽  
Interfacial Structures ◽  
Chemical Factors ◽  
Geometrical Matching ◽  
Interfacial Free Energies

Interfacial structures of c-axis-oriented YBa2Cu3O7–y (Y123) and Nd1+xBa2–xCu3O7–y (Nd123) films were investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with geometrical lattice matching and molecular orbital calculations. These films were formed on MgO(001) substrates by liquid-phase epitaxy. Despite the similarity in lattice constants between Y123 and Nd123, the in-plane orientation relationship (OR) to the substrates is different: [100]film//[100]substrate(I) for Y123 and [110]film//[100]substrate(II) for Nd123. From the results of HRTEM observations and image simulations, it was found that the Y123 and Nd123 films are terminated by BaO and CuO-chain layers at the interfaces, respectively. For both the Y123/MgO and Nd123/MgO systems, the OR(I) is assessed to be the most favorable in point of geometrical matching and the OR(II) is the second among the rotational misorientations on the [001]film and [001]MgO. The molecular orbital calculations reveal that the interface with the OR(II) and the CuO-chain layer termination is preferable in terms of covalent bonding for both the systems. Consequently, we suggest that the preferential interfacial structures are delicately determined by a balance of the geometrical and chemical factors at the interfaces, resulting in making the lowest interfacial free energies.

Epitaxial growth of gadolinium and lutetium-based aluminum perovskite thin films for X-ray micro-imaging applications

CrystEngComm ◽  
2016 ◽  
Vol 18 (4) ◽  
pp. 608-615 ◽  
Author(s):  
F. Riva ◽  
P.-A. Douissard ◽  
T. Martin ◽  
F. Carlà ◽  
Y. Zorenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
X Ray

High quality and dense GdLuAP:Eu scintillating screens have been successfully grown using liquid phase epitaxy showing superior imaging performances as compared the currently used GGG films.

Liquid Phase Epitaxial Growth of Fe-Doped Semi-Insulating Inp and Ternary Alloys

1986 ◽  
Vol 77 ◽  
Author(s):  
S. Isozumi ◽  
T. Tanahashi ◽  
M. Kondo ◽  
M. Sugawara ◽  
A. Yamaguchi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
Distribution Coefficients ◽  
Ternary Alloys ◽  
Fe Doping ◽  
Temperature Dependent ◽  
Liquid Phase Epitaxial ◽  
Liquid Phase Epitaxial Growth ◽  
First Time

ABSTRACTFe-doped semi-insul ati ng layers of InP, In0.48A10.52As,and In0.49Ga0.51P have been grown by liquid phase epitaxy for the first time. Behaviors of Fe doping in these materials have been well explained by the solubility of Fe in the growth solution and the temperature dependent distribution coefficients of Fe. It has been found that the distribution coefficients of Fe in the ternary alloys are much greater than those in InP.

Ion-Implantation Getiering of Impurities in CdTe

1989 ◽  
Vol 161 ◽  
Author(s):  
M. H. Jin ◽  
K. M. James ◽  
C. E. Jones ◽  
J. L. Merz
Keyword(s):  
Liquid Phase ◽  
Ion Implantation ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
Annealing Behavior ◽  
Ternary Compounds ◽  
Implantation Damage ◽  
Anneal Time

ABSTRACTThis is the first reported use of ion-implantation damage gettering of impurities in CdTe to provide high-quality substrates for the epitaxial growth of appropriate binary or ternary compounds, or for related applications. We describe the results of photoluminescence (PL) measurements performed on samples of Bridgeman-grown CdTe to study both the annealing behavior and gettering effects in this material. From the PL results, it was found that impurity gettering occurs at temperatures at which liquid phase epitaxy take place (∼500°C) so that these two fabrication procedures are compatible. It was also found that the optimum anneal time at this temperature is four hours.

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