Interfacial structures of Y123 and Nd123 films formed on MgO(001) substrates by liquid phase epitaxy

2004 ◽  
Vol 19 (9) ◽  
pp. 2674-2682 ◽  
Author(s):  
J.S. Matsuda ◽  
F. Oba ◽  
T. Murata ◽  
T. Yamamoto ◽  
Y. Ikuhara ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Molecular Orbital ◽  
Liquid Phase Epitaxy ◽  
Molecular Orbital Calculations ◽  
Lattice Matching ◽  
Transmission Electron ◽  
Interfacial Structures ◽  
Chemical Factors ◽  
Geometrical Matching ◽  
Interfacial Free Energies

Interfacial structures of c-axis-oriented YBa2Cu3O7–y (Y123) and Nd1+xBa2–xCu3O7–y (Nd123) films were investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with geometrical lattice matching and molecular orbital calculations. These films were formed on MgO(001) substrates by liquid-phase epitaxy. Despite the similarity in lattice constants between Y123 and Nd123, the in-plane orientation relationship (OR) to the substrates is different: [100]film//[100]substrate(I) for Y123 and [110]film//[100]substrate(II) for Nd123. From the results of HRTEM observations and image simulations, it was found that the Y123 and Nd123 films are terminated by BaO and CuO-chain layers at the interfaces, respectively. For both the Y123/MgO and Nd123/MgO systems, the OR(I) is assessed to be the most favorable in point of geometrical matching and the OR(II) is the second among the rotational misorientations on the [001]film and [001]MgO. The molecular orbital calculations reveal that the interface with the OR(II) and the CuO-chain layer termination is preferable in terms of covalent bonding for both the systems. Consequently, we suggest that the preferential interfacial structures are delicately determined by a balance of the geometrical and chemical factors at the interfaces, resulting in making the lowest interfacial free energies.

Evaluation of the Interface Structure During Stranski-Krastanov Growth of GE(SI) on Si (001)

1991 ◽  
Vol 238 ◽  
Author(s):  
M. Albrecht ◽  
H. P. Strunk ◽  
P. O. Hansson ◽  
E. Bauser
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Interface Structure ◽  
Misfit Dislocations ◽  
Heteroepitaxial Growth ◽  
Dislocation Glide ◽  
Transmission Electron ◽  
Half Loop

ABSTRACTThe initial stages of heteroepitaxial growth of Ge0.85 Si0.15 on Si(001) grown from Bi solution (liquid phase epitaxy) are studid by transmission electron microscopy. Stranski-Krastanov growth is observed to take place. After growth of a pseudomorphic Ge0.85 Si0.15 layer of 4 monolayer thickness, islands form and grow pseudomorphically up to a thickness of 30 nm. Then first misfit dislocations form. The formation process of these dislocations is analyzed and discussed in terms of half loop nucleation at the surface and dislocation glide. Evidence for glide on (110) planes is put forward.

Amorphization of Garnet by Ion Implantation

1983 ◽  
Vol 27 ◽  
Author(s):  
A. M. Guzman ◽  
T. Yoshiie ◽  
C. L. Bauer ◽  
M. H. Kryder
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Liquid Phase ◽  
Ion Implantation ◽  
Liquid Phase Epitaxy ◽  
Atomic Displacement ◽  
Transmission Electron ◽  
Continuous Band ◽  
Subsequent Propagation

ABSTRACTAmorphization by ion implantation has been investigated in films of (SmYGdTm)3Ga0.4Fe4.6O12 garnet by transmission electron microscopy, incorporating a special cross-sectioning technique. These films were produced by liquid phase epitaxy on (111) garnet substrates and subsequently implanted with ions of deuterium at 60 keV and doses ranging from 0.50 to 4.5×1016 D2+/cm2 and ions of oxygen at 110 keV and doses ranging from 0.95 to 8.6×1014O+/cm2. The amorphization process proceeds in separate stages involving the formation of isolated amorphous regions, merging of these regions into a continuous band and subsequent propagation of the amorphous band toward the implanted surface. Details of these processes are interpreted in terms of various atomic displacement mechanisms.

Preferential growth mechanism of REBa2Cu3Oy (RE = Y, Nd) crystal on MgO substrate by liquid phase epitaxy

2001 ◽  
Vol 16 (4) ◽  
pp. 979-989 ◽  
Author(s):  
Katsumi Nomura ◽  
Saburo Hoshi ◽  
Xin Yao ◽  
Kazuomi Kakimoto ◽  
Yuichi Nakamura ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Coulomb Force ◽  
Preferential Growth ◽  
Lattice Matching ◽  
Interfacial Energies ◽  
Calculation Results ◽  
The Difference ◽  
Good Agreement

Growth of the REBa2Cu3Oy (REBCO, RE = Y, Nd) crystals on the MgO substrates by the liquid phase epitaxy (LPE) process was investigated to clarify the growth mechanism. The crystal orientation of in-plane alignment was improved during the LPE process due to the preferential dissolution and growth even from a polycrystalline seed film. The orientation of preferential growth depended on the kind of RE for the REBCO system. The phenomena could be explained by the coarsening model by introducing the difference in the interfacial energies, which were considered not only general lattice matching but the Coulomb force at the interface between the REBCO and the MgO crystals. The preferential growth model was developed, and the calculation results showed a good agreement with the experimental results.

The relationship between lattice matching and crosshatch in liquid phase epitaxy HgCdTe on CdZnTe substrates

1995 ◽  
Vol 24 (9) ◽  
pp. 1189-1199 ◽  
Author(s):  
S. P. Tobin ◽  
F. T. J. Smith ◽  
P. W. Norton ◽  
J. Wu ◽  
M. Dudley ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Lattice Matching ◽  
Cdznte Substrates ◽  
The Relationship

Multiple liquid phase epitaxy of In1−xGaxP1−zAszdouble‐heterojunction lasers: The problem of lattice matching

1977 ◽  
Vol 31 (1) ◽  
pp. 40-42 ◽  
Author(s):  
P. D. Wright ◽  
E. A. Rezek ◽  
N. Holonyak ◽  
G. E. Stillman ◽  
J. A. Rossi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Lattice Matching

Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy

2005 ◽  
Vol 483-485 ◽  
pp. 295-298 ◽  
Author(s):  
Gabriel Ferro ◽  
D. Panknin ◽  
Efstathios K. Polychroniadis ◽  
Yves Monteil ◽  
Wolfgang Skorupa ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Structural Characteristics ◽  
Microstructural Characterization ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Thin 3C-SiC films epitaxially grown on Si-substrate are substantially improved by the FLASIC process, which involves irradiation with flash lamps with pulse duration of 20ms. The disadvantages of the standard FLASIC process are the undulations introduced in the SiC film due to melting of the Si-substrate and the Si mass transport near the SiC/Si interface during the flash. An improved structure was realised in order to minimize the undulations of the SiC, improving also the quality of the film. This structure involves the deposition of a silicon overlayer (SOL) on the initial SiC layer, followed by an additional SiC capping layer acting as a source for SiC transfer by liquid phase epitaxy to the lower SiC layer. Significant mass SiC transport from the upper to the lower SiC layer through the SOL occurs during the flash. The new structure is characterized as inverse - FLASiC. The structural characteristics of the new structure were studied by transmission electron microscopy and atomic force microscopy.

Luminescence Properties of GaAs Epitaxial Layers Grown By Liquid Phase Epitaxy and Molecular Beam Epitaxy

1980 ◽  
Vol 2 ◽  
Author(s):  
P. M. Petroff
Keyword(s):  
Liquid Phase ◽  
Molecular Beam Epitaxy ◽  
Liquid Phase Epitaxy ◽  
Scanning Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Degradation Process ◽  
Luminescence Properties ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Laser Devices

ABSTRACTThe luminescence properties of undoped GaAs-Ga1−x Alx As layers grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) are compared for double heterostructure and multiquantum well (MQW) superlattices. Low temperature cathodoluminescence and scanning transmission electron microscopy are used to identify the main luminescence centers and in some instances establish their origin. The possible effects of the observed luminescence features on the degradation process in GaAs-Gal−x Alx As laser devices grown by MBE and LPE are also discussed.

Liquid Phase Epitaxy of Si1−xGex(O<×≲1) On Partially Masked Si-Substrates

1987 ◽  
Vol 91 ◽  
Author(s):  
H.-P. Trah ◽  
M.I. Alonso ◽  
M. Konuma ◽  
E. Bauser ◽  
H. Cerva ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Seeded Growth ◽  
X Ray ◽  
Si Substrates ◽  
Lateral Overgrowth ◽  
Linear Dimensions ◽  
Transmission Electron ◽  
One Step

ABSTRACTSingle-crystal Si1−x Gex(O<×≲1) layers are grown by seeded growth on partially SiO2-masked Si-substrates, using a one-step liquid phase epitaxy (LPE) process. The seed regions are stripe- and hole-shaped windows in the oxide, having linear dimensions between 1.5 and 100 μm. The windows extend in different orientation on (111) and (100) orientated substrates. Lateral overgrowth over the oxide-masked areas is achieved up to 70 μm in <110>-directions. X-ray diffraction and Raman scattering show that the epitaxial islands are homogeneous and of excellent crystal quality. In the regions of lateral overgrowth the dislocation density is reduced considerably as shown by defect-etching and cross section transmission electron microscopy.

Liquid Phase Epitaxy of Na1−yKyTa1−xNbxO3 for Pyroelectric Applications

1994 ◽  
Vol 361 ◽  
Author(s):  
Z. Sitar ◽  
R. Gutmann ◽  
H. Pierhöfer ◽  
P. Günter
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Ferroelectric Phase ◽  
Pyroelectric Coefficient ◽  
Partial Replacement ◽  
Sharp Change ◽  
Perfect Lattice ◽  
Lattice Matching ◽  
Ferroelectric Domain Structure ◽  
Pyroelectric Response

ABSTRACTThe epitaxial growth of para- and ferroelectric KTa1−xNbxO3 (KTN) thin films was achieved in an in-house built liquid phase epitaxy (LPE) apparatus. Films were grown from a KF/NaF/KTN solution on KTaO3 substrates. Growth rates of several μ/min were achieved at a growth temperature of 1200 K. Up to 150 μm thick, smooth KTN films with different compositions were grown and characterized. Almost perfect lattice matching was achieved by the addition of NaF to the KF flux. Partial replacement of K by Na did not result in a significant change of physical properties of KTN.The investigation of the dielectric properties revealed a sharp change of the dielectric constant at the ferroelectric phase transition. The ferroelectric domain structure was modified by poling at 1kV/cm. Pyroelectric studies yielded a pyroelectric coefficient of up to 5.2 mC/m2K while the frequency dependence of the pyroelectric response showed a maximum at 230 Hz.

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