Ion-Implantation Getiering of Impurities in CdTe

1989 ◽  
Vol 161 ◽  
Author(s):  
M. H. Jin ◽  
K. M. James ◽  
C. E. Jones ◽  
J. L. Merz
Keyword(s):  
Liquid Phase ◽  
Ion Implantation ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
Annealing Behavior ◽  
Ternary Compounds ◽  
Implantation Damage ◽  
Anneal Time

ABSTRACTThis is the first reported use of ion-implantation damage gettering of impurities in CdTe to provide high-quality substrates for the epitaxial growth of appropriate binary or ternary compounds, or for related applications. We describe the results of photoluminescence (PL) measurements performed on samples of Bridgeman-grown CdTe to study both the annealing behavior and gettering effects in this material. From the PL results, it was found that impurity gettering occurs at temperatures at which liquid phase epitaxy take place (∼500°C) so that these two fabrication procedures are compatible. It was also found that the optimum anneal time at this temperature is four hours.

Epitaxial growth of gadolinium and lutetium-based aluminum perovskite thin films for X-ray micro-imaging applications

CrystEngComm ◽  
2016 ◽  
Vol 18 (4) ◽  
pp. 608-615 ◽  
Author(s):  
F. Riva ◽  
P.-A. Douissard ◽  
T. Martin ◽  
F. Carlà ◽  
Y. Zorenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
High Quality ◽  
X Ray

High quality and dense GdLuAP:Eu scintillating screens have been successfully grown using liquid phase epitaxy showing superior imaging performances as compared the currently used GGG films.

scholarly journals Liquid phase epitaxial growth of high quality GaAs on InP using Se‐doped GaAs buffer layer and grating‐patterned substrates

1995 ◽  
Vol 66 (19) ◽  
pp. 2531-2533 ◽  
Author(s):  
Dong‐Keun Kim ◽  
Ju‐Heon Ahn ◽  
Byung‐Teak Lee ◽  
H. J. Lee ◽  
S. S. Cha ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Patterned Substrates ◽  
High Quality ◽  
Liquid Phase Epitaxial ◽  
Gaas Buffer Layer ◽  
Liquid Phase Epitaxial Growth

Growth and characterization of high-quality GaInAsSb layers on GaSb substrates by liquid-phase epitaxy

1992 ◽  
Vol 35 (4) ◽  
pp. 523-528 ◽  
Author(s):  
Meng-Chyi Wu ◽  
Chi-Ching Chen ◽  
Ching-Ting Lee
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

Liquid Phase Epitaxial Growth and Characterization of High Quality GaInAsSb/InAs for Photodiodes

1993 ◽  
Vol 32 (S3) ◽  
pp. 125
Author(s):  
Gong Kan ◽  
Tomuo Yamaguchi ◽  
Isao Suzuki ◽  
Mitsuru Aoyama ◽  
Masashi Kumagawa ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
High Quality ◽  
Liquid Phase Epitaxial ◽  
Liquid Phase Epitaxial Growth

Epitaxial growth of single-crystalline-film scintillators based on Tb3+-doped and Tb3+–Ce3+-codoped Gd1–xLuxAlO3 (x = 0–1) mixed perovskites

CrystEngComm ◽  
2019 ◽  
Vol 21 (9) ◽  
pp. 1433-1441 ◽  
Author(s):  
V. Gorbenko ◽  
T. Zorenko ◽  
K. Paprocki ◽  
F. Riva ◽  
P. A. Douissard ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
Single Crystalline ◽  
Crystalline Film ◽  
Crystalline Films ◽  
Single Crystalline Film

The paper is dedicated to the development of scintillating screens based on the single crystalline films of singly Tb3+ and doubly Tb3+–Ce3+ doped Gd1–xLuxAlO3 (x = 0–1) perovskites grown onto YAlO3 substrates using the liquid phase epitaxy method.

Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

2015 ◽  
Vol 117 (17) ◽  
pp. 175307 ◽  
Author(s):  
Rene Wutzler ◽  
Lars Rebohle ◽  
Slawomir Prucnal ◽  
Felipe L. Bregolin ◽  
Rene Hübner ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Ion Implantation ◽  
Liquid Phase Epitaxy ◽  
Flash Lamp

(Invited) Fabrication of High-Quality Ge-on-Insulator Structures by Lateral Liquid Phase Epitaxy

2015 ◽  
Vol 69 (5) ◽  
pp. 305-311 ◽  
Author(s):  
T. Shimura ◽  
Y. Suzuki ◽  
M. Matsue ◽  
K. Kajimura ◽  
K. Tominaga ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

Transient Annealing of Ion Implanted Gallium Arsenide

1982 ◽  
Vol 13 ◽  
Author(s):  
J.S. Williams
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Solid Phase ◽  
Dopant Activation ◽  
Implantation Damage ◽  
Dopant Redistribution ◽  
Ion Implanted

ABSTRACTThis paper provides a brief overview of the application of transient annealing to the removal of ion implantation damage and dopant activation in GaAs. It is shown that both the liquid phase and solid phase annealing processes are more complex in GaAs than those observed in Si. Particular attention is given to observations of damage removal, surface dissociation, dopant redistribution, solubility and the electrical properties of GaAs. The various annealing mechanisms are discussed and areas in need of further investigation are identified.

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