A new laser Printing technique for the fabrication of thin film transistors

1999 ◽  
Vol 558 ◽  
Author(s):  
D. Toet ◽  
P.M. Smith ◽  
T.W. Sigmon ◽  
M.O. Thompson
Keyword(s):  
Thin Film ◽  
Laser Pulse ◽  
Thin Film Transistors ◽  
Quartz Substrate ◽  
Silicon Film ◽  
Amorphous Film ◽  
Switching Behavior ◽  
Excimer Laser Pulse ◽  
A New Technique ◽  
Film Substrate

ABSTRACTWe present a new technique for the spatially selective deposition, or “printing”, of materials such as Si and Al. This transfer is effected by irradiating a hydrogenated amorphous silicon film deposited on a quartz substrate and coated with the material to be transferred with an excimer laser pulse. The resulting release and accumulation of hydrogen at the film/substrate interface generates pressures sufficient to propel the silicon, as well as any overlying material, onto an adjacent glass receptor wafer. Transient optical transmission measurements performed during the transfer of Si indicate that the amorphous film is melted by the laser pulse and breaks into droplets during ejection. These droplets travel towards the host substrate with a velocity of about 800 m/s and coalesce upon arrival. For fluences above 400 mJ/cm2, the resulting films adhere well to the receptors and can be smoothed using a second laser irradiation. We fabricated thin film transistors (TFTs) in the printed-and-smoothed Si using conventional lithography. The resulting devices show consistent switching behavior. We have also printed Si and Al lines with widths 5 to 15 µm by patterning the laser beam using a reflective grating mask defined on the target substrate. These lines are straight, show few discontinuities, and have sharp edges.

A high carrier-mobility crystalline silicon film directly grown on polyimide using SiCl4/H2 microwave plasma for flexible thin film transistors

2015 ◽  
Vol 3 (28) ◽  
pp. 7513-7522 ◽  
Author(s):  
Ping-Yen Hsieh ◽  
Chi-Young Lee ◽  
Nyan-Hwa Tai
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Microwave Plasma ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Si Films

Flexible Si-TFTs with a high carrier mobility of 106 cm2 V−1 s−1 are fabricated using SiCl4/H2 microwave plasma for the preparation of crystalline Si films.

Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation

2005 ◽  
Vol 902 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Masaru Senoo ◽  
Etsu Shin
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Quartz Substrate ◽  
Drain Current ◽  
Optical Transmittance ◽  
Gate Insulator ◽  
Current Drain

AbstractWe demonstrate transparent thin film transistors (TFTs) with nonvolatile memory operation using Bi4-xLaxTi3O12 (BLT) as a gate insulator and indium tin oxide (ITO) as a channel. ITO is also used for the gate, source and drain electrodes. Drain current-drain voltage (ID-VD) characteristics of transparent ITO/BLT ferroelectric-gate TFTs exhibit excellent n-channel transistor operations. On current of 0.35 mA was obtained when the applied gate voltage is 6V. On the other hand, the off current of the device is as low as 10-10A, which indicates that the ITO channel is sufficiently depleted by the ferroelectric polarization. In addition, drain current-gate voltage (ID-VG) characteristics demonstrate clear counterclockwise hysteresis loop due to the ferroelectric gate insulator. Optical transmittance of the fabricated device is greater than 60% including the quartz substrate.

High Performance Thin Film Transistors for Scanner Applications

1990 ◽  
Vol 182 ◽  
Author(s):  
B.-C. Hseih ◽  
G.A. Hawkins ◽  
S. Ashok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Amorphous Silicon Film

AbstractWe report on the characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) fabricated with low temperature crystallized LPCVD amorphous silicon film as an active layer and plasma enhanced chemical vapor deposition (PECVD) SiO2 as a gate insulator. High performance transistor characteristics are achieved, even though no process temperature exceeds 600°C. No threshold drift has been observed. As a result, these devices are highly suitable for application to image scanners as well as flat panel displays.

Solid-Phase Diffusion Interaction in Multilayer Thin-Film System Cr/Cu/Ni at Pulse Laser Heating

2008 ◽  
Vol 272 ◽  
pp. 31-40 ◽  
Author(s):  
M. Vasylyev ◽  
M.M. Nishenko ◽  
Sergey I. Sidorenko ◽  
S.M. Voloshko
Keyword(s):  
Thin Film ◽  
Laser Pulse ◽  
Pulse Energy ◽  
Laser Heating ◽  
Laser Pulse Energy ◽  
Diffusion Processes ◽  
Solid Phase ◽  
Exponential Dependence ◽  
Film Substrate ◽  
Pulse Laser Heating

The laser-induced mass transfer in thin-film substrate /Cr/Cu/Ni system is studied by means of Auger Electron Spectroscopy (AES). For the laser-pulse energy values, E = 100-170mJ, the diffusion of Cu atoms into Ni layer and their accumulation within this layer are observed, whereas at E > 170mJ the same is true for Cr atoms. The observed phenomena are explained on the basis of calculated temperature distribution in the system at issue during lased action. Enhanced transfer of Cr atoms towards external surface is observed under the irradiation regimes leading to the melting of intermediate copper layer. Diffusion coefficients of copper and chromium calculated from their surface accumulation show an exponential dependence on the laser-pulse energy. Under laser heating, the diffusion processes are more manifested as compared with those under conventional thermal annealing. This is bound up with higher concentration of nonequilibrium defects generated within the irradiation zone.

Poly and Nano-crystalline High Electron Mobility Thin Film Transistors on Plastic Substrates for Large Area Applications

2007 ◽  
Vol 1030 ◽  
Author(s):  
Sara Paydavosi ◽  
Amir-Hossein Tamaddon ◽  
Shams Mohajerzadeh ◽  
Michael D Robertson
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
High Electron ◽  
Large Area ◽  
Nano Crystalline

AbstractThin-film transistors (TFT) of poly and nano crystalline silicon have been made at temperature as low as 170°C on flexible PET (polyethylene terephthalate) substrates.The crystallization of the silicon film has been achieved using external mechanical stress assisted by a plasma hydrogenation technique. The formation of TFT is possible by means of a lateral crystallization of amorphous silicon under the channel region. High mobility TFTs with an electron mobility of 25cm2/Vs and an on/off ratio of 2000 have been obtained. Scanning electron microscopy, X-ray diffraction analysis and optical microscopy have been used to examine the crystallinity of the layer. In addition we report the deposition of high quality low-temperature silicon-oxide layers on PET substrates using an RF-plasma enhanced chemical vapor deposition unit with direct introduction of oxygen gas into the chamber and its reaction with Silane. Infrared spectroscopy was used to examine the quality of the oxide layer.

Laser Induced Decohesion Spectroscopy: A New Technique for Measuring Polymer Interfacial Adhesion

1996 ◽  
Vol 461 ◽  
Author(s):  
J. S. Meth ◽  
D. Sanderson ◽  
C. Mutchler ◽  
S. J. Bennison
Keyword(s):  
Laser Pulse ◽  
Interfacial Adhesion ◽  
System Parameter ◽  
Laser Pulse Energy ◽  
Work Of Adhesion ◽  
New Technique ◽  
Physical Variables ◽  
A New Technique ◽  
Automotive Finish ◽  
Film Substrate

ABSTRACTWe present a new technique, laser induced decohesion spectroscopy (LIDS), which is capable of measuring the practical work of adhesion G between a transparent polymer film and an opaque substrate. In LIDS, a laser pulse directed onto the sample creates a blister at the film/substrate interface. The blister's internal pressure depends on the laser pulse energy, and at a critical pressure the sample fractures. We have derived a theoretical analysis of this experiment based on elasticity theory and fracture mechanics, and present the results. By measuring physical variables such as the thickness of the transparent polymer, the blister radius, and the blister curvature, it is possible to deduce G between the two coatings. Here we report G for a matrix of automotive finish systems consisting of four opaque basecoats of various colors (black, white, red, green) coated with a clearcoat of various thicknesses. We expect G to be a system parameter for each basecoat independent of clearcoat thickness. The values of G for the different basecoats yield the relative adhesion of the various pigmented paint formulations.

Amorphous Silicon Thin-Film Transistors Modified by Doping and Plasma Treatment of the Nitride

1991 ◽  
Vol 219 ◽  
Author(s):  
Norbert Nickel ◽  
Rosari Saleh ◽  
Walther Fuhs ◽  
Helmut Mell
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Oxygen Plasma ◽  
Silicon Film ◽  
Transfer Characteristic ◽  
Effective Density ◽  
Defect States ◽  
Silicon Thin Film ◽  
Related Defect

ABSTRACTThin—film transistors (TFTs) were prepared by the glow—discharge deposition of amorphous silicon nitride (a—SiNx:H) and amorphous silicon (a—Si:H). The properties of these TFTs were varied in two ways: a) doping of the amorphous silicon film with phosphine or diborane and b) exposure of the a—SiNx:H film to an oxygen plasma prior to the deposition of the a—Si:H layer. The TFTs are characterized by measurements of the transfer characteristic, ISD(VG) and of the effective density of interface states, Ni(E), using a transient current spectroscopy (TCS). The dependence of Ni(E) on the Fermi—level position in the a—Si:H film suggests that for EC—EF > 0.6eV this quantity is mainly determined by interface related defect states whereas for Ec,—EF <0.6eV it is determined by doping—induced defect states. The exposure to the oxygen plasma results in a reduction of Ni in both the upper and lower half of the gap and in an improvement of the characteristic, in particular in p—channel TFTs. These changes are discussed in terms of the chemical-equilibrium or defect—pool concept.

A Study on the Failure Procedure of the Film-Substrate Interface Based on the Laser Scratch Testing Technique

2004 ◽  
Vol 471-472 ◽  
pp. 746-749
Author(s):  
Ai Xin Feng ◽  
Yong Kang Zhang ◽  
H.K. Xie ◽  
Lan Cai
Keyword(s):  
Thin Film ◽  
Interfacial Adhesion ◽  
Stress And Strain ◽  
Scratch Testing ◽  
Testing Technique ◽  
System A ◽  
Predominant Factor ◽  
A New Technique ◽  
Film Substrate ◽  
Measure Technique

The interfacial adhesion between thin film and substrate is often the predominant factor and chief target in determining the performance and reliability of thin film/substrate system. A new technique of laser scratch testing technique has been presented by the authors of the article to characterize the interfacial adhesion between film and substrate, which synthesizes the advantages of traditional scratching technique and laser measure technique. The failure procedure is studied detailedly in the article. On different failure step of the film/substrate system, there are different characteristic s of stress and strain, as well as the characteristic of thermal lensing effect, which can be used as the distinguishing rule of the bonding state of the film/substrate system.

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