Laser Induced Decohesion Spectroscopy: A New Technique for Measuring Polymer Interfacial Adhesion

1996 ◽  
Vol 461 ◽  
Author(s):  
J. S. Meth ◽  
D. Sanderson ◽  
C. Mutchler ◽  
S. J. Bennison

ABSTRACTWe present a new technique, laser induced decohesion spectroscopy (LIDS), which is capable of measuring the practical work of adhesion G between a transparent polymer film and an opaque substrate. In LIDS, a laser pulse directed onto the sample creates a blister at the film/substrate interface. The blister's internal pressure depends on the laser pulse energy, and at a critical pressure the sample fractures. We have derived a theoretical analysis of this experiment based on elasticity theory and fracture mechanics, and present the results. By measuring physical variables such as the thickness of the transparent polymer, the blister radius, and the blister curvature, it is possible to deduce G between the two coatings. Here we report G for a matrix of automotive finish systems consisting of four opaque basecoats of various colors (black, white, red, green) coated with a clearcoat of various thicknesses. We expect G to be a system parameter for each basecoat independent of clearcoat thickness. The values of G for the different basecoats yield the relative adhesion of the various pigmented paint formulations.

1985 ◽  
Vol 40 (7) ◽  
pp. 674-676 ◽  
Author(s):  
H. v. Weyssenhoff ◽  
H. L. Selzle ◽  
E. W. Schlag

A new technique of desorption of non volatile thermally unstable molecules into a supersonic jet has been developped. With this method isolated large molecules are now available for mass spectrometry as well as for spectroscopic studies at temperatures of a few Kelvin, thus avoiding spectral congestion. It could be demonstrated that molecules like tryptophane and retinal could be desorbed with an IR laser pulse without decomposition and be ionized with a second UV laser to form bare molecule ions without fragmentation.


2008 ◽  
Vol 272 ◽  
pp. 31-40 ◽  
Author(s):  
M. Vasylyev ◽  
M.M. Nishenko ◽  
Sergey I. Sidorenko ◽  
S.M. Voloshko

The laser-induced mass transfer in thin-film substrate /Cr/Cu/Ni system is studied by means of Auger Electron Spectroscopy (AES). For the laser-pulse energy values, E = 100-170mJ, the diffusion of Cu atoms into Ni layer and their accumulation within this layer are observed, whereas at E > 170mJ the same is true for Cr atoms. The observed phenomena are explained on the basis of calculated temperature distribution in the system at issue during lased action. Enhanced transfer of Cr atoms towards external surface is observed under the irradiation regimes leading to the melting of intermediate copper layer. Diffusion coefficients of copper and chromium calculated from their surface accumulation show an exponential dependence on the laser-pulse energy. Under laser heating, the diffusion processes are more manifested as compared with those under conventional thermal annealing. This is bound up with higher concentration of nonequilibrium defects generated within the irradiation zone.


1999 ◽  
Vol 47 (17) ◽  
pp. 4405-4413 ◽  
Author(s):  
J.M. Sánchez ◽  
S. El-Mansy ◽  
B. Sun ◽  
T. Scherban ◽  
N. Fang ◽  
...  

1999 ◽  
Vol 558 ◽  
Author(s):  
D. Toet ◽  
P.M. Smith ◽  
T.W. Sigmon ◽  
M.O. Thompson

ABSTRACTWe present a new technique for the spatially selective deposition, or “printing”, of materials such as Si and Al. This transfer is effected by irradiating a hydrogenated amorphous silicon film deposited on a quartz substrate and coated with the material to be transferred with an excimer laser pulse. The resulting release and accumulation of hydrogen at the film/substrate interface generates pressures sufficient to propel the silicon, as well as any overlying material, onto an adjacent glass receptor wafer. Transient optical transmission measurements performed during the transfer of Si indicate that the amorphous film is melted by the laser pulse and breaks into droplets during ejection. These droplets travel towards the host substrate with a velocity of about 800 m/s and coalesce upon arrival. For fluences above 400 mJ/cm2, the resulting films adhere well to the receptors and can be smoothed using a second laser irradiation. We fabricated thin film transistors (TFTs) in the printed-and-smoothed Si using conventional lithography. The resulting devices show consistent switching behavior. We have also printed Si and Al lines with widths 5 to 15 µm by patterning the laser beam using a reflective grating mask defined on the target substrate. These lines are straight, show few discontinuities, and have sharp edges.


2017 ◽  
Vol 66 (4) ◽  
pp. 044204
Author(s):  
Xia Yan-Wen ◽  
Shen Miao ◽  
Sun Zhi-Hong ◽  
Peng Zhi-Tao ◽  
Lu Zong-Gui ◽  
...  

2004 ◽  
Vol 471-472 ◽  
pp. 746-749
Author(s):  
Ai Xin Feng ◽  
Yong Kang Zhang ◽  
H.K. Xie ◽  
Lan Cai

The interfacial adhesion between thin film and substrate is often the predominant factor and chief target in determining the performance and reliability of thin film/substrate system. A new technique of laser scratch testing technique has been presented by the authors of the article to characterize the interfacial adhesion between film and substrate, which synthesizes the advantages of traditional scratching technique and laser measure technique. The failure procedure is studied detailedly in the article. On different failure step of the film/substrate system, there are different characteristic s of stress and strain, as well as the characteristic of thermal lensing effect, which can be used as the distinguishing rule of the bonding state of the film/substrate system.


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