Synthesis of Silicon Nitride Whiskers by Microwave Heating

1998 ◽  
Vol 547 ◽  
Author(s):  
S. Gedevanishvili ◽  
K. Cherian ◽  
D. Agrawal ◽  
R. Roy

AbstractWhiskers of silicon nitride were synthesized by heating silicon powder compacts, silicon single crystal and polycrystalline silicon in microwave in the presence of flowing forming gas or nitrogen. Various gas compositions and form of silicon used resulted in different whisker morphologies. Silicon powder as starting material leads to the formation of needle-like whiskers while silicon single crystal and polycrystalline silicon led to the formation of wool-like and web-like structures respectively. Length of the whiskers apparently depends on the holding time at the optimum temperature ~1350°C; whiskers up to 250 micrometers in length may be grown in 30 minutes. Microstructural data suggest that the silicon nitride whiskers form through gas-solid reaction and vapor-solid mechanism.

1994 ◽  
Vol 347 ◽  
Author(s):  
J. O. Kiggans ◽  
T. N. Tiegs ◽  
H. D. Kimrey ◽  
Jon-Paul Maria

AbstractStudies using laboratory test samples have shown that microwave heating produces sintered reaction-bonded silicon nitride materials with improved properties [1,2]. The final challenge for processing this material by microwave heating is the development of a technology for processing larger batch-size quantities of these materials. Initial microwave scale-up experiments were performed using powder compacts of a bucket tappet geometry. In experiments using microwave-transparent boron nitride sample crucibles, temperature gradients within some crucibles led to larger variations in the sample densities than were obtained with the conventionally processed samples. The use of a microwave-suscepter type crucible made of silicon carbide and boron nitride resulted in an improved temperature uniformity and in density variations comparable to those obtained for the control groups.


Author(s):  
M. Awaji

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.


2011 ◽  
Vol 18 (4) ◽  
Author(s):  
Petr Sedlak ◽  
Pavel Tofel ◽  
Vlasta Sedlakova ◽  
Jiri Majzner ◽  
Josef Sikula ◽  
...  

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