Characterization of polycrystalline silicon–single‐crystal silicon interfaces and correlation to bipolar transistor device data

1991 ◽  
Vol 69 (1) ◽  
pp. 495-498 ◽  
Author(s):  
Paul A. Ronsheim ◽  
Brian Cunningham ◽  
Mark D. Dupuis
Keyword(s):  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Single Crystal Silicon ◽  
Silicon Single Crystal ◽  
Bipolar Transistor ◽  
Crystal Silicon

Nanoindentation Characterization of Single-Crystal Silicon With Oxide Film

2021 ◽  
Author(s):  
Lianmin Yin ◽  
Yifan Dai ◽  
Hao Hu
Keyword(s):  
Mechanical Properties ◽  
Plastic Deformation ◽  
Oxide Film ◽  
Single Crystal ◽  
Deformation Zone ◽  
Single Crystal Silicon ◽  
Plastic Deformation Zone ◽  
Crystal Silicon ◽  
Ultra Precision

Abstract In order to obtain ultra-smooth surfaces of single-crystal silicon in ultra-precision machining, an accurate study of the deformation mechanism, mechanical properties, and the effect of oxide film under load is required. The mechanical properties of single-crystal silicon and the phase transition after nanoindentation experiments are investigated by nanoindentation and Raman spectroscopy, respectively. It is found that pop-in events appear in the theoretical elastic domain of single-crystal silicon due to the presence of oxide films, which directly leads the single crystal silicon from the elastic deformation zone into the plastic deformation zone. In addition, the mechanical properties of single-crystal silicon are more accurately measured after it has entered the full plastic deformation.

Characterization of orientation-dependent etching properties of single-crystal silicon: effects of KOH concentration

1998 ◽  
Vol 64 (1) ◽  
pp. 87-93 ◽  
Author(s):  
Kazuo Sato ◽  
Mitsuhiro Shikida ◽  
Yoshihiro Matsushima ◽  
Takashi Yamashiro ◽  
Kazuo Asaumi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon
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