Plasma-Induced Stabilization of Pmma Surfaces for Enhanced Adhesion of Plasma-Deposited Coatings

1998 ◽  
Vol 544 ◽  
Author(s):  
J. E. Klemberg-Sapieha ◽  
L. Martinu ◽  
N. L. S. Yamasaki ◽  
C. W. Lantman
Keyword(s):  
Vacuum Ultraviolet ◽  
Protective Coatings ◽  
Extended Period ◽  
Interfacial Region ◽  
Cohesive Failure ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Direct Exposure ◽  
Excellent Adhesion ◽  
Mechanically Stabilized

AbstractAdhesion of plasma-deposited optical and protective coatings, such as amorphous hydrogenated silicon nitride, SiN1.3, on polymethyl-methacrylate (PMMA) substrates has been found to be limited by a cohesive failure inside the PMMA bulk. Using direct exposure to a low pressure plasma in helium or to vacuum ultraviolet radiation generated from H2 plasma for an extended period of time, we succeeded to obtain excellent adhesion even under a humidity test at elevated temperature. We found, using a multitechnique approach, that such improved adhesion is achieved by forming a crosslinked, mechanically stabilized layer in the interfacial region, which possesses a physical thickness of 50 to 100 nm.

scholarly journals Robust Pressure Sensor in SOI Technology with Butterfly Wiring for Airfoil Integration

Sensors ◽  
2021 ◽  
Vol 21 (18) ◽  
pp. 6140
Author(s):  
Jan Niklas Haus ◽  
Martin Schwerter ◽  
Michael Schneider ◽  
Marcel Gäding ◽  
Monika Leester-Schädel ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Flip Chip ◽  
Protective Coatings ◽  
Silicon On Insulator ◽  
Wafer Level ◽  
Airfoil Surface ◽  
High Lift ◽  
Hydrogenated Silicon ◽  
Surface Protection ◽  
Amorphous Hydrogenated Silicon

Current research in the field of aviation considers actively controlled high-lift structures for future civil airplanes. Therefore, pressure data must be acquired from the airfoil surface without influencing the flow due to sensor application. For experiments in the wind and water tunnel, as well as for the actual application, the requirements for the quality of the airfoil surface are demanding. Consequently, a new class of sensors is required, which can be flush-integrated into the airfoil surface, may be used under wet conditions—even under water—and should withstand the harsh environment of a high-lift scenario. A new miniature silicon on insulator (SOI)-based MEMS pressure sensor, which allows integration into airfoils in a flip-chip configuration, is presented. An internal, highly doped silicon wiring with “butterfly” geometry combined with through glass via (TGV) technology enables a watertight and application-suitable chip-scale-package (CSP). The chips were produced by reliable batch microfabrication including femtosecond laser processes at the wafer-level. Sensor characterization demonstrates a high resolution of 38 mVV−1 bar−1. The stepless ultra-smooth and electrically passivated sensor surface can be coated with thin surface protection layers to further enhance robustness against harsh environments. Accordingly, protective coatings of amorphous hydrogenated silicon nitride (a-SiN:H) and amorphous hydrogenated silicon carbide (a-SiC:H) were investigated in experiments simulating environments with high-velocity impacting particles. Topographic damage quantification demonstrates the superior robustness of a-SiC:H coatings and validates their applicability to future sensors.

Pulsed ruby laser accelerated degradation of amorphous hydrogenated silicon

1993 ◽  
Vol 164-166 ◽  
pp. 235-238 ◽  
Author(s):  
O. Klíma ◽  
O. Štika ◽  
Ho Tha Ha ◽  
S. Fouad Abdel Hamied ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Ruby Laser ◽  
Hydrogenated Silicon ◽  
Accelerated Degradation ◽  
Amorphous Hydrogenated Silicon

Initial results and long-term clinical follow-up of an amorphous hydrogenated silicon-carbide-coated stent in daily practice

1998 ◽  
Vol 1 (2) ◽  
pp. 81-85
Author(s):  
Clara EE Hanekamp ◽  
Hans JRM Bonnier ◽  
Rolf H Michels ◽  
Kathinka H Peels ◽  
Eric PCM Heijmen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Daily Practice ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Initial Results

scholarly journals Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

1996 ◽  
Vol 43 (9) ◽  
pp. 1592-1601 ◽  
Author(s):  
S.J. Bijlsma ◽  
H. van Kranenburg ◽  
K.J.B.M. Nieuwesteeg ◽  
M.G. Pitt ◽  
J.F. Verweij
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Electrical Breakdown ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon
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