scholarly journals Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

1996 ◽  
Vol 43 (9) ◽  
pp. 1592-1601 ◽  
Author(s):  
S.J. Bijlsma ◽  
H. van Kranenburg ◽  
K.J.B.M. Nieuwesteeg ◽  
M.G. Pitt ◽  
J.F. Verweij
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Electrical Breakdown ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

Control of stability and current-voltage characteristics in amorphous hydrogenated silicon nitride thin film diodes

1997 ◽  
Vol 82 (4) ◽  
pp. 1711-1715 ◽  
Author(s):  
B. McGarvey ◽  
J. E. Curran ◽  
R. A. Ford ◽  
I. D. French ◽  
I. G. Gale ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics

Microstructure of Thin Film Photoconductors and its Correlation with Optical and Electronic Properthss

1996 ◽  
Vol 452 ◽  
Author(s):  
U. Klement ◽  
D. Horst ◽  
F. Ernst
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Transmission Electron ◽  
Electronic Eye

AbstractThe objective of this work is to find a material to replace amorphous hydrogenated silicon used as photosensitive part in the “retina” of an “electronic eye”. For that reason, ZnS, ZnSe, CdS and CdSe were chosen for investigations. Thin films, prepared by chemical vapour deposition, were characterized by transmission electron microscopy. The observed microstructures were correlated with the optoelectronic properties of these materials. CdSe was found to be the most promising material for our application. Hence, the influence of a dielectric interlayer and the effects of additional annealing treatments were analyzed for CdSe and will be discussed with respect to the optimization of the material.

Reliability of Silicon Nitride Gate Dielectric in Vertical Thin-Film Transistors

2007 ◽  
Vol 989 ◽  
Author(s):  
Maryam Moradi ◽  
D. Striakhilev ◽  
I. Chan ◽  
A. Nathan ◽  
N. I. Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Electrical Breakdown ◽  
Thick Films ◽  
Experimental Result ◽  
Process Conditions ◽  
Vertical Sidewall

AbstractIn this work, we have conducted a systematic investigation of leakage current and electrical breakdown of plasma enhanced chemical vapor deposited (PECVD) silicon nitride, both for planar films and deposited films on the vertical sidewall for the application of the vertical thin film transistors. The thickness evolution of physical properties and electrical characteristics of silicon nitride films in the range of 50 to 300 nm are investigated. Electrical breakdown strength for 150-300nm thick films was approximately 7 MV/cm, whereas the value dropped to ~3MV/cm for 50nm thick films deposited under the same process conditions. It is shown that the early failure of the thin nitride is accompanied by the increase of the pinholes number. For the vertical thin film transistors, the experimental result shows the reliability and leakage current of the gate dielectric depends on the step coverage of the silicon nitride film on the vertical sidewall.

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