Interconnect-Related Degradation of PZT Capacitor for FeRAM

1998 ◽  
Vol 541 ◽  
Author(s):  
S. Kobayashi ◽  
K. Amanuma ◽  
H. Hada
Keyword(s):  
Thin Film ◽  
Ferroelectric Properties ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Film ◽  
Pzt Thin Film ◽  
Possible Cause

AbstractFerroelectric properties of a Pb(Zr,Ti)O3 (PZT) thin film capacitor with a conventional Al/TiN/Ti interconnect are seriously degraded by annealing at around 400°C. The degradation of the PZT capacitor is reduced as the interconnects are narrowed while the total area of the interconnects on the capacitor is fixed. This result cannot be understood by supposing that Ti diffusion into PZT degrades the ferroelectric properties. A possible cause for the degradation is stress placed on the PZT film during the 400°C annealing.

Spalling Technology of PZT Thin Film Capacitor using Internal Stress

2014 ◽  
Vol 134 (4) ◽  
pp. 85-89
Author(s):  
Kazutaka Sueshige ◽  
Fumiaki Honda ◽  
Tadatomo Suga ◽  
Masaaki Ichiki ◽  
Toshihiro Itoh
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film

Optimized Fabrication Process of PZT Thin Film Capacitor for MMIC Applications

2009 ◽  
Author(s):  
R. A. Bakar ◽  
S. Sulaiman ◽  
N. F. M. Lazim ◽  
Z. Awang ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Thin Film ◽  
Fabrication Process ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film

Effect of grounding arrangement on PZT thin film capacitor

2007 ◽  
Author(s):  
Suhana Sulaiman ◽  
Nor Fazlina Mohd Lazim ◽  
Raudah Abu Bakar ◽  
Zaiki Awang ◽  
Asban Dollah
Keyword(s):  
Thin Film ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film

Effect of Surface Morphology of NiCr-Bottom Electrode on Preparation of Ferroelectric PZT Thin Film Capacitor

1996 ◽  
Vol 433 ◽  
Author(s):  
K.B. Lee ◽  
B.R. Rhee ◽  
S.K. Cho
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
Film Capacitor ◽  
Spin Casting ◽  
Thin Film Capacitor ◽  
Atomic Force ◽  
Pzt Thin Film

AbstractWe have studied the optimum conditions of the deposition of NiCr-bottom electrode for preparing the ferroelectric PZT(50/50) thin film capacitor. The NiCr(80/20) layer of about 300nm in thickness was deposited on bare Si(111) wafer by rf magnetron sputtering. The surface morphology and crystallinity were investigated by using Atomic force microscope (AFM) and X-ray diffractormeter (XRD). It is found that the size and crystallinity of grains of NiCr or Ni-silicide depend mainly on the rf power. The PZT(50/50) thin films were prepared on NiCr/Si substates by spin-casting of PZT coating sol and then annealing at 520°C in air for crystallization. The undesirable Pb-silicate is found to be grown during post-annealing in case that substrates having NiCr layer deposited by high power above 80 W are used. We suggest that the formation of Pb-silicate is due to the thermal diffusion of Pb or PbO through crystalline NiCr-grain boundaries. The ferroelectric PZT thin films having the perovskite structure can be obtained by using the NiCr-bottom electrodes whose morphologies are in the amorphous-crystalline boundaries, in which the surface roughness and grain size of NiCr layer is minimum. The values of the dielectric constant, εn, were measured in the range 300˜500, the remanent polarization, Pr, in the range 10˜13 C/cm2 and the coercive field, Ec, around 160 kV/cm, depending on the deposition conditions of NiCr layers.

Measurement of d15 Shear-Mode Piezoelectric Response in PZT Thin Film

2009 ◽  
Vol 421-422 ◽  
pp. 95-98
Author(s):  
Tsuyoshi Aoki ◽  
Shigeyoshi Umemiya ◽  
Masaharu Hida ◽  
Kazuaki Kurihara
Keyword(s):  
Thin Film ◽  
Fem Analysis ◽  
Active Part ◽  
Piezoelectric Response ◽  
Small Displacement ◽  
Shear Mode ◽  
Mems Devices ◽  
Pzt Film ◽  
Pzt Thin Film ◽  
Piezoelectric Constants

Piezoelectric films using d15 shear-mode can be applied to many useful MEMS devices. The small displacement derived from the d15 shear-mode was directly observed by a SPM measurement. An isolated PZT(52/48) active part having a pair of driving Cu electrodes was processed in a 5 m-thick sputtering film. The displacement measurement of the active part and its FEM analysis suggested that the estimated d15 piezoelectric constant of the film was 590 pm/V. And, the d31 value of the film was -120 pm/V measured by a conventional cantilever method. The obtained piezoelectric constants of the PZT film are near those of bulk.

Microstructural and Ferroelectric Properties of a Chemical Solution Deposited Epitaxial PbZr0.5 Ti0.5O3 Thin Film on a SrRuO3/SrTiO3 Substrate

1999 ◽  
Vol 14 (4) ◽  
pp. 1190-1193 ◽  
Author(s):  
J. H. Kim ◽  
A. T. Chien ◽  
F. F. Lange ◽  
L. Wills
Keyword(s):  
Thin Film ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Transmission Electron ◽  
Saturation Polarization ◽  
Pzt Thin Film ◽  
Relationship Of

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at 600 °C. The microstructure of the PZT thin film was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure. The PZT thin film has the epitaxial orientational relationship of (001) [010]PZT ║ (001) [010]SRO ║ (001) [010]STO with the substrate. The remnant (Pr ) and saturation polarization (Ps) density were measured to be Pr ~ 51.4 µC/cm2 and Ps ~ 62.1 µC/cm2 at 5 V, respectively. Ferroelectric fatigue measurements show that the net-switching polarization begins to drop (to 98% of its initial value) after 7 × 108 cycles.

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