Theoretical investigation of the influence of space charges on ferroelectric properties of PbZrTiO3 thin film capacitor

1999 ◽  
Vol 86 (2) ◽  
pp. 1096-1105 ◽  
Author(s):  
L. Baudry
1998 ◽  
Vol 541 ◽  
Author(s):  
S. Kobayashi ◽  
K. Amanuma ◽  
H. Hada

AbstractFerroelectric properties of a Pb(Zr,Ti)O3 (PZT) thin film capacitor with a conventional Al/TiN/Ti interconnect are seriously degraded by annealing at around 400°C. The degradation of the PZT capacitor is reduced as the interconnects are narrowed while the total area of the interconnects on the capacitor is fixed. This result cannot be understood by supposing that Ti diffusion into PZT degrades the ferroelectric properties. A possible cause for the degradation is stress placed on the PZT film during the 400°C annealing.


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Vol 134 (4) ◽  
pp. 85-89
Author(s):  
Kazutaka Sueshige ◽  
Fumiaki Honda ◽  
Tadatomo Suga ◽  
Masaaki Ichiki ◽  
Toshihiro Itoh

2009 ◽  
Author(s):  
R. A. Bakar ◽  
S. Sulaiman ◽  
N. F. M. Lazim ◽  
Z. Awang ◽  
Mohamad Rusop ◽  
...  

Author(s):  
William B. Kuhn ◽  
Andrew D. Fund ◽  
J. Ambrose Wolf ◽  
Robert W. Schwartz ◽  
James Claypool ◽  
...  

2015 ◽  
Vol 44 (6) ◽  
pp. 425-429 ◽  
Author(s):  
Kh. Sokhrabi Anaraki ◽  
N. V. Gaponenko ◽  
M. V. Rudenko ◽  
V. V. Kolos ◽  
A. N. Petlitskii ◽  
...  

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