2013 IEEE International Meeting for Future of Electron Devices, Kansai
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9781467361071, 9781467361064

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Leakage current characteristics of new SrBi4Ti4O15/CaBi4Ti4O15 thin-film capacitor with excellent electric stability

2013 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2013.6602250 ◽

2013 ◽

Author(s):

Hideaki Kawahara ◽

Naoya Tahara ◽

Shuhei Nomura ◽

Kaoru Yamashita ◽

Minoru Noda ◽

...

Keyword(s):

Thin Film ◽

Leakage Current ◽

Film Capacitor ◽

Thin Film Capacitor ◽

Current Characteristics

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Author index

2013 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2013.6602276 ◽

2013 ◽

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Influence of a pocket doping in a Schottky tunneling FET

2013 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2013.6602225 ◽

2013 ◽

Author(s):

Shilpi Guin ◽

Avik Chattopadhyay ◽

Anupam Karmakar ◽

Abhijit Mallik

Keyword(s):

Tunneling Fet

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[Front cover]

2013 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2013.6602214 ◽

2013 ◽

Keyword(s):

Front Cover

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Development of SiC power devices and modules for automotive motor drive use

2013 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2013.6602266 ◽

2013 ◽

Cited By ~ 9

Author(s):

Tristan Evans ◽

Toshio Hanada ◽

Yuki Nakano ◽

Takashi Nakamura

Keyword(s):

Motor Drive ◽

Power Devices

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Electrical charaterization of lateral tunnel junctions fabricated on AlGaN/GaN heterostructures

2013 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2013.6602242 ◽

2013 ◽

Author(s):

Y. Kobayashi ◽

T. Saito ◽

H. Tokuda ◽

M. Kuzuhara

Keyword(s):

Tunnel Junctions ◽

Lateral Tunnel

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Evolution of Power Amplifier for mobile applications

2013 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2013.6602264 ◽

2013 ◽

Cited By ~ 2

Author(s):

Satoshi Tanaka

Keyword(s):

Power Amplifier ◽

Mobile Applications

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Keynote speeches [2 full artcile presentations]

2013 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2013.6602219 ◽

2013 ◽

Author(s):

Masaaki Kuzuhara

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Atmospheric pressure processed InGaZnO thin-film transistors

2013 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2013.6602270 ◽

2013 ◽

Author(s):

Mamoru Furuta ◽

Toshiyuki Kawaharamura

Keyword(s):

Thin Film ◽

Atmospheric Pressure ◽

Thin Film Transistors

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The effect of supply voltage reduction to 5.8-GHz differential dual-modulus prescaler

2013 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2013.6602226 ◽

2013 ◽

Cited By ~ 2

Author(s):

Takeshi Mitsunaka ◽

Masafumi Yamanoue ◽

Kunihiko Iizuka ◽

Minoru Fujishima

Keyword(s):

Supply Voltage

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2013 IEEE International Meeting for Future of Electron Devices, KansaiLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Leakage current characteristics of new SrBi4Ti4O15/CaBi4Ti4O15 thin-film capacitor with excellent electric stability

Author index

Influence of a pocket doping in a Schottky tunneling FET

[Front cover]

Development of SiC power devices and modules for automotive motor drive use

Electrical charaterization of lateral tunnel junctions fabricated on AlGaN/GaN heterostructures

Evolution of Power Amplifier for mobile applications

Keynote speeches [2 full artcile presentations]

Atmospheric pressure processed InGaZnO thin-film transistors

The effect of supply voltage reduction to 5.8-GHz differential dual-modulus prescaler

2013 IEEE International Meeting for Future of Electron Devices, Kansai
Latest Publications