Influence of a post–chemical mechanical polishing cleaning process on the ferroelectric properties of a Pb(Zr,Ti)O3 thin film capacitor fabricated by the damascene process

2008 ◽  
Vol 26 (4) ◽  
pp. 720-723
Author(s):  
Nam-Hoon Kim ◽  
Young-Kil Jun ◽  
Pil-Ju Ko ◽  
Woo-Sun Lee
Keyword(s):  
Thin Film ◽  
Chemical Mechanical Polishing ◽  
Ferroelectric Properties ◽  
Mechanical Polishing ◽  
Cleaning Process ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Damascene Process

Interconnect-Related Degradation of PZT Capacitor for FeRAM

1998 ◽  
Vol 541 ◽  
Author(s):  
S. Kobayashi ◽  
K. Amanuma ◽  
H. Hada
Keyword(s):  
Thin Film ◽  
Ferroelectric Properties ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Film ◽  
Pzt Thin Film ◽  
Possible Cause

AbstractFerroelectric properties of a Pb(Zr,Ti)O3 (PZT) thin film capacitor with a conventional Al/TiN/Ti interconnect are seriously degraded by annealing at around 400°C. The degradation of the PZT capacitor is reduced as the interconnects are narrowed while the total area of the interconnects on the capacitor is fixed. This result cannot be understood by supposing that Ti diffusion into PZT degrades the ferroelectric properties. A possible cause for the degradation is stress placed on the PZT film during the 400°C annealing.

Spalling Technology of PZT Thin Film Capacitor using Internal Stress

2014 ◽  
Vol 134 (4) ◽  
pp. 85-89
Author(s):  
Kazutaka Sueshige ◽  
Fumiaki Honda ◽  
Tadatomo Suga ◽  
Masaaki Ichiki ◽  
Toshihiro Itoh
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film

Slurry Residue Removal in Post Chemical Mechanical Polishing

1999 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Naim Moumen
Keyword(s):  
Chemical Mechanical Polishing ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Operating Conditions ◽  
Cleaning Process ◽  
Megasonic Cleaning ◽  
Residue Removal ◽  
Particulate Contamination

Abstract The megasonic cleaning process proved to be an essential process in cleaning silicon wafers after processes such as pre-oxidation, pre-CVD, pre-EPI, post-ASH and lately post-CMP. Current post-CMP cleans are contact cleaning techniques. These contact techniques have a low throughput and may cause wafer scratching. In addition, in contact cleaning, brush shedding which occurs under many operating conditions causes additional particulate contamination. There is a need for an effective post-CMP cleaning process. Megasonic cleaning provides the best alternative or compliment to brush clean.

Optimized Fabrication Process of PZT Thin Film Capacitor for MMIC Applications

2009 ◽  
Author(s):  
R. A. Bakar ◽  
S. Sulaiman ◽  
N. F. M. Lazim ◽  
Z. Awang ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Thin Film ◽  
Fabrication Process ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film
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