Characterization and Oxidation Kinetics of Reactively Sputtered Ti1−xAlxN Film

1998 ◽  
Vol 541 ◽  
Author(s):  
Yoshiki Ishizuka ◽  
Dong Joo Kim ◽  
Stephen K. Streiffer ◽  
Angus I. Kingon

AbstractWe report on the use of Ti1−xAlxN as an electrically conductive barrier layer from the viewpoint of its oxidation kinetics and electrical properties. Auger electron spectroscopy depth profile analysis revealed the improvement of oxidation resistance with Al incorporation. At 650 °C, an oxygen diffusion coefficient and an activation energy of Ti0.47AI0.53N were determined to be 5.85×10−1 Å 2/sec and 2.51 eV respectively. Compared with TiN, this corresponds to an oxide gowth rate reduction of about two orders of magnitude. An Al-rich oxide layer, which gew near the Ti1−XAlxN surface, is believed to act as a passivation layer to oxidation. Furthermore, current-voltage characteristics showed that the oxidation resistant Ti1−xAlxN minimized the increase of electrical resistance after heat treatment in an oxidizing atmosphere. These results suggest that Ti1−xAlxN is an attractive candidate for an electrically conductive barrier layer for advanced memory device applications.

2020 ◽  
Author(s):  
Camilo A. Mesa ◽  
Ludmilla Steier ◽  
Benjamin Moss ◽  
Laia Francàs ◽  
James E. Thorne ◽  
...  

<p><i>Operando</i> spectroelectrochemical analysis is used to determine the water oxidation reaction kinetics for hematite photoanodes prepared using four different synthetic procedures. Whilst these photoanodes exhibit very different current / voltage performance, their underlying water oxidation kinetics are found to be almost invariant. Lower photoanode performance was found to correlate with the observation of optical signals indicative of charge accumulation in mid-gap oxygen vacancy states, indicating these states do not contribute directly to water oxidation.</p>


NANO ◽  
2017 ◽  
Vol 12 (05) ◽  
pp. 1750055
Author(s):  
Enming Zhao ◽  
Hui Li ◽  
Fengjuan Miao ◽  
Yanmei Sun

A functional polyimide (CF3 PI) was used as the active layer in our present work for electrical resistive memory device applications. Current–voltage ([Formula: see text]–[Formula: see text]) characteristics analysis on the polyimide memory devices indicates that the polyimide possesses a nonvolatile rewritable flash characteristic with an ON/OFF current ratio of about 104 at the threshold voltage of around [Formula: see text][Formula: see text]V and 3.8[Formula: see text]V. In addition, the device using the CF3 PI as the active layer reveals excellent long-term operation stability with the endurance of reading cycles up to 108 under a voltage pulse and retention times for at least 106[Formula: see text]s under constant voltage stress (1[Formula: see text]V). The conduction mechanisms are elucidated on the basis of the thermionic emission theory and filament conduction.


2020 ◽  
Author(s):  
Camilo A. Mesa ◽  
Ludmilla Steier ◽  
Benjamin Moss ◽  
Laia Francàs ◽  
James E. Thorne ◽  
...  

<p><i>Operando</i> spectroelectrochemical analysis is used to determine the water oxidation reaction kinetics for hematite photoanodes prepared using four different synthetic procedures. Whilst these photoanodes exhibit very different current / voltage performance, their underlying water oxidation kinetics are found to be almost invariant. Lower photoanode performance was found to correlate with the observation of optical signals indicative of charge accumulation in mid-gap oxygen vacancy states, indicating these states do not contribute directly to water oxidation.</p>


1990 ◽  
Vol 187 ◽  
Author(s):  
Ann C. Herrmann ◽  
D William E. Brower ◽  
Shashi Lalvani

AbstractThe effetzct of the amorphous state and the disordered sputtered state on the oxidation kinetics of nickel films was investigated by a comparison with annealed films and with pure nickel foil and powder. Specimens were exposed to oxygen in a thermogravimetric analyzer (TGA) in the temperature scan mode. An electrodeposited amorphous Ni-P alloy and sputtered pure nickel films were annealed in situ in argon and then oxidized in the same manner as the as deposited films. The as sputtered films oxidized faster at 500%C than pieces of the same film first annealed in argon. Conversely, the as deposited Ni-P film was more oxidation resistant below its crystallization temperature than the annealed Ni-P films.


1998 ◽  
Vol 32 (19) ◽  
pp. 2990-2996 ◽  
Author(s):  
Lukas Emmenegger ◽  
D. Whitney King ◽  
Laura Sigg ◽  
Barbara Sulzberger

2013 ◽  
Vol 27 (2) ◽  
pp. 666-672 ◽  
Author(s):  
Jillian L. Goldfarb ◽  
Anthony D’Amico ◽  
Christopher Culin ◽  
Eric M. Suuberg ◽  
Indrek Külaots

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 450
Author(s):  
Hak Dong Cho ◽  
Deuk Young Kim ◽  
Jong-Kwon Lee

High crystalline ZnO nanorods (NRs) on Zn pre-deposited graphene/Cu sheet without graphene transfer process have been fabricated by self-catalyzed vapor-phase transport synthesis. Here, the pre-deposited Zn metal on graphene not only serves as a seed to grow the ZnO NRs, but also passivates the graphene underneath. The temperature-dependent photoluminescence spectra of the fabricated ZnO NRs reveal a dominant peak of 3.88 eV at 10 K associated with the neutral-donor bound exciton, while the redshifted peak by bandgap shrinkage with temperature and electron-lattice interactions leads a strong emission at 382 nm at room temperature. The optical absorption of the ZnO NRs/graphene hetero-nanostructure at this ultraviolet (UV) emission is then theoretically analyzed to quantify the absorption amount depending on the ZnO NR distribution. By simply covering the ZnO NR/graphene/Cu structure with the graphene/glass as a top electrode, it is observed that the current-voltage characteristic of the ZnO NR/graphene hetero-nanojunction device exhibits a photocurrent of 1.03 mA at 3 V under a light illumination of 100 μW/cm2. In particular, the suggested graphene/ZnO NRs/graphene hybrid-nanostructure-based devices reveal comparable photocurrents at a bidirectional bias, which can be a promising platform to integrate 1D and 2D nanomaterials without complex patterning process for UV device applications.


Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.


Author(s):  
V. Optasanu ◽  
M. C. Marco de Lucas ◽  
A. Kanjer ◽  
B. Vincent ◽  
T. Montesin ◽  
...  

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