Nonvolatile Bistable Resistive Switching in Polyimide Bearing Trifluoromethyl Film

NANO ◽  
2017 ◽  
Vol 12 (05) ◽  
pp. 1750055
Author(s):  
Enming Zhao ◽  
Hui Li ◽  
Fengjuan Miao ◽  
Yanmei Sun

A functional polyimide (CF3 PI) was used as the active layer in our present work for electrical resistive memory device applications. Current–voltage ([Formula: see text]–[Formula: see text]) characteristics analysis on the polyimide memory devices indicates that the polyimide possesses a nonvolatile rewritable flash characteristic with an ON/OFF current ratio of about 104 at the threshold voltage of around [Formula: see text][Formula: see text]V and 3.8[Formula: see text]V. In addition, the device using the CF3 PI as the active layer reveals excellent long-term operation stability with the endurance of reading cycles up to 108 under a voltage pulse and retention times for at least 106[Formula: see text]s under constant voltage stress (1[Formula: see text]V). The conduction mechanisms are elucidated on the basis of the thermionic emission theory and filament conduction.

2013 ◽  
Vol 385-386 ◽  
pp. 995-998
Author(s):  
Hong Peng He ◽  
Jun Liu

Smart grid puts forward higher requirements for measurement equipments, so optical current transducer (OCT) used in power system possess broad application prospects. In this paper, magnetism gathering technology is applied in the design of OCTs optical structure and the magnetism gathering optical structure based on solenoid coil is proposed. Compared with traditional bulk optical structure, this structure simplifies the optical structure significantly. Results of simulation and field operation indicate that this structure can not only enhance the magnetic field created by the measured current significantly, but also improve the long-term operation stability of OCT.


1998 ◽  
Vol 541 ◽  
Author(s):  
Yoshiki Ishizuka ◽  
Dong Joo Kim ◽  
Stephen K. Streiffer ◽  
Angus I. Kingon

AbstractWe report on the use of Ti1−xAlxN as an electrically conductive barrier layer from the viewpoint of its oxidation kinetics and electrical properties. Auger electron spectroscopy depth profile analysis revealed the improvement of oxidation resistance with Al incorporation. At 650 °C, an oxygen diffusion coefficient and an activation energy of Ti0.47AI0.53N were determined to be 5.85×10−1 Å 2/sec and 2.51 eV respectively. Compared with TiN, this corresponds to an oxide gowth rate reduction of about two orders of magnitude. An Al-rich oxide layer, which gew near the Ti1−XAlxN surface, is believed to act as a passivation layer to oxidation. Furthermore, current-voltage characteristics showed that the oxidation resistant Ti1−xAlxN minimized the increase of electrical resistance after heat treatment in an oxidizing atmosphere. These results suggest that Ti1−xAlxN is an attractive candidate for an electrically conductive barrier layer for advanced memory device applications.


Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2095
Author(s):  
Yanmei Sun ◽  
Li Li ◽  
Keying Shi

We demonstrate a nonvolatile memristor based on Co–Al-layered double hydroxide (Co–Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co–Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co–Al LDHs in the active layer. While different, Co–Al LDH-based memory devices show gradual current changes, and the memory device with small molecules of adsorbed hexazinone undergo abrupt changes. Both devices demonstrate programmable memory peculiarities. In particular, both memristors show rewritable resistive switching with electrical bistability (>105 s). This research manifests the promising potential of 2D nanocomposite materials for adsorbing electroactive small molecules and rectifying resistive switching properties for memristors, paving a way for design of promising 2D nanocomposite memristors for advanced device applications.


2021 ◽  
Vol 13 (2) ◽  
pp. 532
Author(s):  
Peng Zhang ◽  
Shaohua Jing ◽  
Zifeng Nie ◽  
Boyuan Zhao ◽  
Runhua Tan

Product-service system (PSS) complexity is rapidly increasing in order to meet complex user requirements. Increased complexity leads to PSSs failing to meet sustainability requirements in their initial design. To enhance PSS sustainability and support social benefits, this paper proposes a sustainable PSS development framework based on design-centric complexity (DCC) theory. In the early design stage of a PSS, DCC theory is used to analyze the complexity of the system. Determination of the types of complexity in the system and the corresponding problems is then performed. By combining the sub-field model of TRIZ, the problems can be converted and solved, and the functional periodicity may be established to reduce system complexity. By using this development framework, the conflicts and potential problems of design attributes can be reduced and the possibility of achieving PSSs functional requirements (FRs) can be enhanced. This will maintain the long-term operation stability for the system and enhance the sustainability of the PSS. Finally, the feasibility of the development framework is verified here through the case analysis of a bicycle sharing service and management system.


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