The Search for Interstitial Dislocation Loops Produced in Displacement Cascades at 20K in Copper
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AbstractA low-temperature in situ ion-irradiation and annealing experiment has been performed by TEM in copper. Most defect clusters which persisted through an anneal to 120 K showed no size changes within the resolution (0.5 nm) of a new weak-beam sizing technique. Of 55 defects measured under a range of weakly diffracting conditions, 7 showed measurable size decreases while 3 showed size increases. We argue that these clusters are likely to be of vacancy and interstitial nature, respectively. Also on annealing to 120 K a fraction of about 25% of the clusters formed by irradiation with 600 kV Cu+ ions at 20 K disappeared, while a similar number of clusters appeared in different locations.
1990 ◽
Vol 48
(4)
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pp. 1002-1003
1980 ◽
Vol 38
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pp. 154-155
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1978 ◽
Vol 36
(1)
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pp. 402-403
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2001 ◽
Vol 16
(10)
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pp. 2788-2792
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