HCL Oxidation of High Dose Arsenic Implanted Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
Seong Soo Choi ◽  
M. Z. Numan ◽  
T. G. Finstad ◽  
W. K. Chu ◽  
D. Fathy
Keyword(s):  
Pattern Formation ◽  
Temperature Dependence ◽  
Thermal Oxidation ◽  
Oxidation Rate ◽  
Arsenic Concentration ◽  
Oxidation Temperature ◽  
High Dose ◽  
P Type

ABSTRACTThermal oxidation of high dose arsenic implanted p-type <100> silicon has been performed in order to study arsenic snowplowing. Bubble pattern formation and local oxide bowing (mound) in relation to the arsenic concentration in silicon as well as an HC1 ambient have been observed for an oxidation temperature of 1050°C. Oxide peel off at an oxidation temperature of 950°C for an atmosphere with an HC1 ambient has been observed. In addition, an anomaly in the temperature dependence of the oxidation rate independent of an HC1 ambient has been found.

Influence of Conduction-Type on Thermal Oxidation Rate in SiC(0001) with Various Doping Densities

2015 ◽  
Vol 821-823 ◽  
pp. 456-459 ◽  
Author(s):  
Takuma Kobayashi ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Rate ◽  
Nitrogen Doping ◽  
Oxide Thickness ◽  
Doping Density ◽  
Aluminum Doping ◽  
Conduction Type ◽  
P Type

It was discovered that the oxidation rate for SiC depended on the conduction type. The oxidation was performed for SiC(0001) with nitrogen doping (n-type) in the range from 2×1016cm-3to 1×1019cm-3, and aluminum doping (p-type) in the range from 2×1015cm-3to 1×1019cm-3, exhibiting a clear dependence. For n-type SiC the oxide thickness increases for higher doping density, and for p-type the thickness decreases. Note that in the case of Si oxidation, there exists very little difference of oxidation rate between the conduction types in such low doping density, and the dependence is peculiar to SiC.

Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

2016 ◽  
Vol 109 (18) ◽  
pp. 182114 ◽  
Author(s):  
Takuji Hosoi ◽  
Daisuke Nagai ◽  
Mitsuru Sometani ◽  
Yoshihito Katsu ◽  
Hironori Takeda ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Thermal Oxidation ◽  
Oxidation Temperature ◽  
Interface Properties ◽  
Rapid Thermal Oxidation ◽  
Ultrahigh Temperature

Thermal oxidation temperature dependence of 4H-SiC MOS interface

2006 ◽  
Vol 253 (5) ◽  
pp. 2416-2420 ◽  
Author(s):  
Hirofumi Kurimoto ◽  
Kaoru Shibata ◽  
Chiharu Kimura ◽  
Hidemitsu Aoki ◽  
Takashi Sugino
Keyword(s):  
Temperature Dependence ◽  
Thermal Oxidation ◽  
Oxidation Temperature

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

The Effect of Ge Segregation on Oxidation of Si

1987 ◽  
Vol 105 ◽  
Author(s):  
E. C. Frey ◽  
N. R. Parikh ◽  
M. L. Swanson ◽  
M. Z. Numan ◽  
W. K. Chu
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Epitaxial Layer ◽  
Atmospheric Pressure ◽  
Oxidation Rate ◽  
Oxidation Temperature ◽  
Pressure Oxidation ◽  
Enhanced Oxidation ◽  
High Pressure Oxidation

AbstractWe have studied oxidation of various Si samples including: Ge implanted Si, CVD and MBE grown Si(0.4–4% Ge) alloys, and MBE grown Si-Si(Ge) superlattices. The samples were oxidized in pyrogenic steam (800–1000°C, atmospheric pressure) and at low temperature and high pressure (740°C, 205 atm of dry O2). The oxidized samples were analyzed with RBS/channeling and ellipsometry.An enhanced oxidation rate was seen for all Ge doped samples, compared with rates for pure Si. The magnitude of the enhancement increased with decreasing oxidation temperature. For steam oxidations the Ge was segregated from the oxide and formed an epitaxial layer at the Si-SiO2 interface; the quality of the epitaxy was highest for the highest oxidation temperatures. For high pressure oxidation the Ge was trapped in the oxide and the greatest enhancement in oxidation rate (>100%) was observed.

UV–ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide

1999 ◽  
Vol 2 (1) ◽  
pp. 23-27 ◽  
Author(s):  
Carl-Mikael Zetterling ◽  
Mikael Östling ◽  
Chris I Harris ◽  
Peter C Wood ◽  
S.Simon Wong
Keyword(s):  
Silicon Carbide ◽  
Thermal Oxidation ◽  
Type Silicon ◽  
P Type ◽  
Uv Ozone

Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air

2015 ◽  
Vol 45 (4) ◽  
pp. 2087-2091 ◽  
Author(s):  
Shirong Zhao ◽  
Heather McFavilen ◽  
Shuo Wang ◽  
Fernando A. Ponce ◽  
Chantal Arena ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Ohmic Contact ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
P Type

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

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