Thermal oxidation temperature dependence of 4H-SiC MOS interface

2006 ◽  
Vol 253 (5) ◽  
pp. 2416-2420 ◽  
Author(s):  
Hirofumi Kurimoto ◽  
Kaoru Shibata ◽  
Chiharu Kimura ◽  
Hidemitsu Aoki ◽  
Takashi Sugino
Keyword(s):  
Temperature Dependence ◽  
Thermal Oxidation ◽  
Oxidation Temperature

Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

2016 ◽  
Vol 109 (18) ◽  
pp. 182114 ◽  
Author(s):  
Takuji Hosoi ◽  
Daisuke Nagai ◽  
Mitsuru Sometani ◽  
Yoshihito Katsu ◽  
Hironori Takeda ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Thermal Oxidation ◽  
Oxidation Temperature ◽  
Interface Properties ◽  
Rapid Thermal Oxidation ◽  
Ultrahigh Temperature

HCL Oxidation of High Dose Arsenic Implanted Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
Seong Soo Choi ◽  
M. Z. Numan ◽  
T. G. Finstad ◽  
W. K. Chu ◽  
D. Fathy
Keyword(s):  
Pattern Formation ◽  
Temperature Dependence ◽  
Thermal Oxidation ◽  
Oxidation Rate ◽  
Arsenic Concentration ◽  
Oxidation Temperature ◽  
High Dose ◽  
P Type

ABSTRACTThermal oxidation of high dose arsenic implanted p-type <100> silicon has been performed in order to study arsenic snowplowing. Bubble pattern formation and local oxide bowing (mound) in relation to the arsenic concentration in silicon as well as an HC1 ambient have been observed for an oxidation temperature of 1050°C. Oxide peel off at an oxidation temperature of 950°C for an atmosphere with an HC1 ambient has been observed. In addition, an anomaly in the temperature dependence of the oxidation rate independent of an HC1 ambient has been found.

scholarly journals Thermal oxidation curing polycarbosilane fibers by alternating air and vacuum process

RSC Advances ◽  
2020 ◽  
Vol 10 (44) ◽  
pp. 26052-26058
Author(s):  
Xiaohong Li ◽  
Zhaofang Xu ◽  
Lu Chen ◽  
Liu Hong ◽  
Yang Li
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Temperature ◽  
Vacuum Atmosphere

Polycarbosilane (PCS) fibers were cured by a process of alternating air and vacuum atmosphere periodically at thermal oxidation temperature.

SURFACE MORPHOLOGY AND X-RAY DIFFRACTION ANALYSIS FOR SILICON NANOCRYSTAL-BASED HETEROSTRUCTURES

2013 ◽  
Vol 20 (05) ◽  
pp. 1350046 ◽  
Author(s):  
EVAN T. SALIM
Keyword(s):  
Surface Morphology ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Oxidation Temperature ◽  
Silicon Nanocrystal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rapid Thermal Oxidation ◽  
O Phase ◽  
Thermal Oxidation Process

In this work, we studied the effect of rapid thermal oxidation process on the structural and surface morphology of silicon nanocrystal-based heterostructures. PLD technique was employed in combination with rapid thermal oxidation process to form multilayers heterostructures. Results show the dependence of the surface roughness and structure on the oxidation temperature. Best surface morphology was achieved at 723 K oxidation temperature, at which, the X-ray diffraction result ensured the formation of the Cu 2 O phase at (111) and (002) diffraction plain with uniform porous surface.

Effect of Thermal Oxidation Temperature on the Properties of Micro-Arc Oxidation Ceramic Coating on TC4 Alloy

2016 ◽  
Vol 697 ◽  
pp. 623-626
Author(s):  
Er Xin Ni ◽  
Ji Kang Yan ◽  
Yun Feng Wu ◽  
Yuan Teng ◽  
Zhi Cao Duan ◽  
...  
Keyword(s):  
Phase Composition ◽  
Surface Morphology ◽  
Thermal Oxidation ◽  
Ceramic Coating ◽  
Oxidation Temperature ◽  
Micro Hardness ◽  
Hardness Tester ◽  
Coating Surface ◽  
Tc4 Alloy ◽  
Micro Arc Oxidation

The effect of thermal oxidation temperature on the properties of MAO ceramic coating was investigated, The phase composition and surface morphology of composite oxidation coating were analyzed by XRD and SEM. The micro-hardness of composite oxidation coating were tested by micro hardness tester. The results shown that the composite oxidation coating consists of rutile, anatase Ti and HA. With the thermal oxidation temperature increasing, the micro-hardness of composite oxidation coatings were improved, but when the thermal oxidation temperature rose from 600 °C to 700 °C, the micro-hardness of coating dropped from 575 HV to 505 HV. With the thermal oxidation temperature increasing, the numbers of micro-porous on coating surface was decreased , and the composite oxidation coating became more density.

Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation

2014 ◽  
Vol 778-780 ◽  
pp. 832-835 ◽  
Author(s):  
Naoki Kaji ◽  
Hiroki Niwa ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Temperature Dependence ◽  
Thermal Oxidation ◽  
Breakdown Voltage ◽  
Device Simulation ◽  
Pin Diodes ◽  
High Breakdown Voltage ◽  
Lifetime Enhancement

Ultrahigh-voltage SiC PiN diodes with an original junction termination extension (JTE) structure and improved forward characteristics are presented. A space-modulated JTE (SM-JTE) structure was designed by device simulation, and a high breakdown voltage of 26.9 kV was achieved by using a 270 μm-thick epilayer and 1050 μm-long JTE. In addition, lifetime enhancement process via thermal oxidation was performed to improve the forward characteristics. The on-resistance of the SiC PiN diodes was remarkably reduced by lifetime enhancement process. The temperature dependence of the on-resistance was also discussed.

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