The Effect of Ge Segregation on Oxidation of Si

1987 ◽  
Vol 105 ◽  
Author(s):  
E. C. Frey ◽  
N. R. Parikh ◽  
M. L. Swanson ◽  
M. Z. Numan ◽  
W. K. Chu
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Epitaxial Layer ◽  
Atmospheric Pressure ◽  
Oxidation Rate ◽  
Oxidation Temperature ◽  
Pressure Oxidation ◽  
Enhanced Oxidation ◽  
High Pressure Oxidation

AbstractWe have studied oxidation of various Si samples including: Ge implanted Si, CVD and MBE grown Si(0.4–4% Ge) alloys, and MBE grown Si-Si(Ge) superlattices. The samples were oxidized in pyrogenic steam (800–1000°C, atmospheric pressure) and at low temperature and high pressure (740°C, 205 atm of dry O2). The oxidized samples were analyzed with RBS/channeling and ellipsometry.An enhanced oxidation rate was seen for all Ge doped samples, compared with rates for pure Si. The magnitude of the enhancement increased with decreasing oxidation temperature. For steam oxidations the Ge was segregated from the oxide and formed an epitaxial layer at the Si-SiO2 interface; the quality of the epitaxy was highest for the highest oxidation temperatures. For high pressure oxidation the Ge was trapped in the oxide and the greatest enhancement in oxidation rate (>100%) was observed.

Thermodynamics and Kinetics for Suppression of GeO Desorption by High Pressure Oxidation of Ge

2009 ◽  
Vol 1155 ◽  
Author(s):  
Kosuke Nagashio ◽  
C. H. Lee ◽  
T. Nishimura ◽  
K. Kita ◽  
A. Toriumi
Keyword(s):  
High Pressure ◽  
Vapor Pressure ◽  
Concentration Gradient ◽  
Driving Force ◽  
Pressure Oxidation ◽  
Thermodynamics And Kinetics ◽  
Passive Oxidation ◽  
Rate Limiting ◽  
High Pressure Oxidation

AbstractWe analyze a main scheme for the suppression of GeO desorption by the high pressure oxidation which drastically improve the electrical quality of Ge/GeO2 capacitors. The inherent driving force for GeO to form at the Ge/GeO2 interface and to diffuse toward the GeO2 surface was realized by the concentration gradient in the GeO2 film, which was obtained from the thermodynamic calculation. Kinetic consideration based on the comparison with Si/SiO2 stacks suggests that GeO desorption at the GeO2 surface is the rate-limiting process under passive oxidation conditions. When O2 pressure is increased by high pressure oxidation, the vapor pressure of GeO at the GeO2 surface is reduced, restricting GeO desorption at the GeO2 surface.

Low temperature passivation of Si1−xGex alloys by dry high pressure oxidation

1994 ◽  
Vol 23 (9) ◽  
pp. 883-888 ◽  
Author(s):  
C. Caragianis ◽  
Y. Shigesato ◽  
D. C. Paine
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Pressure Oxidation ◽  
High Pressure Oxidation

High Pressure Oxidation Rate of Metals — Copper in Oxygen

JOM ◽  
1953 ◽  
Vol 5 (9) ◽  
pp. 1127-1130 ◽  
Author(s):  
William McKewan ◽  
W. Martin Fassell
Keyword(s):  
High Pressure ◽  
Oxidation Rate ◽  
Pressure Oxidation ◽  
High Pressure Oxidation

scholarly journals The C2H2 + NO2 reaction: Implications for high pressure oxidation of C2H2/NOx mixtures

2019 ◽  
Vol 37 (1) ◽  
pp. 469-476 ◽  
Author(s):  
Paul Marshall ◽  
Caroline Leung ◽  
Jorge Gimenez-Lopez ◽  
Christian T. Rasmussen ◽  
Hamid Hashemi ◽  
...  
Keyword(s):  
High Pressure ◽  
Pressure Oxidation ◽  
High Pressure Oxidation

Thin oxide films of silicon by high pressure oxidation

1982 ◽  
Vol 11 (5) ◽  
pp. 919-929 ◽  
Author(s):  
M. Hirayama ◽  
H. Miyoshi ◽  
N. Tsubouchi ◽  
H. Abe
Keyword(s):  
High Pressure ◽  
Oxide Films ◽  
Pressure Oxidation ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
High Pressure Oxidation
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