Wet and Dry Oxidation of Single Crystal β-SiC: Kinetics and Interface Characteristics

1985 ◽  
Vol 54 ◽  
Author(s):  
John W. Palmour ◽  
H. J. Kim ◽  
R. F. Davis
Keyword(s):  
Activation Energy ◽  
Silicon Dioxide ◽  
Single Crystal ◽  
Flat Surface ◽  
Parabolic Rate Constant ◽  
Wet Oxidation ◽  
Interface Characteristics ◽  
Dry Oxidation ◽  
Parabolic Relationship ◽  
Parabolic Rate

ABSTRACTSilicon dioxide layers were grown on single crystal (100) β-SiC between 1000°C and 1200°C, in wet O2, dry O2, and wet Ar. All processes demonstrated a linear-parabolic relationship with time. Both wet processes had a slower rate than dry oxidation at 1050°C and below. The activation energies of the linear and parabolic rate constants were calculated for each process. The activation energy of the parabolic rate constant for wet oxidation was found to be inversely dependent on the amount of oxygen present as a carrier gas.The dry oxides exhibited a very flat surface; in contrast, SEM and XTEM reveal that wet oxidation preferentially oxidizes dislocation bands, causing raised lines on the oxide and corresponding grooves in the SiC. It is proposed that the much higher solubility of H2O in SiO2 as compared with that of O2 (103 at 1000°C), allows wet oxidation to be preferential.

Wet And Dry Oxidation of Polycrystalline SixGe1-x Films

1998 ◽  
Vol 533 ◽  
Author(s):  
P.-E. Hellberg ◽  
S.-L. Zhang ◽  
F. M. d'Heurle ◽  
C. S. Petersson
Keyword(s):  
Activation Energy ◽  
Reaction Rate ◽  
Quantitative Description ◽  
Reaction Rate Constant ◽  
Enhancement Effect ◽  
Wet Oxidation ◽  
Simultaneous Oxidation ◽  
Dry Oxidation ◽  
Different Temperatures ◽  
Si Films

AbstractWet and dry oxidations of polycrystalline SixGe1-x, with various compositions have been studied at different temperatures. The growth rate of SiO2 is found to be enhanced by Ge, and the enhancement effect is more pronounced in H2O than in O2. A mathematical model, which assumes simultaneous oxidation of Si and Ge and reduction of GeO2 by free Si available at the growing-oxide/SixGe1-x interface, is found to give a quantitative description of the SiO2 growth during thermal oxidation of SixGe1-x. Kinetic parameters are extracted by comparing the model with experiments. The linear and parabolic rate constants for Si oxidation are determined on control Si (100) wafers and polycrystalline Si films. Simple expressions are used for the interdiffusion of Si and Ge in SixGe1-x. For wet oxidation, the activation energy for the reaction rate constant of Ge oxidation is found to be smaller than that of Si oxidation.

The Kinetics of Low Pressure Rapid Thermal Oxidation of Silicon

1989 ◽  
Vol 146 ◽  
Author(s):  
Stephan E Lassig ◽  
John L
Keyword(s):  
Activation Energy ◽  
Thermal Oxidation ◽  
Rate Constant ◽  
Linear Dependence ◽  
Oxidation Kinetics ◽  
Parabolic Rate Constant ◽  
Parabolic Model ◽  
Parabolic Rate ◽  
Kinetics Of ◽  
Short Times

ABSTRACTA study of the oxidation kinetics of lightly doped (100) silicon in dry oxygen has been carried out at different pressures (0.03 atm. to 1.0 atm.) and temperatures (900ºC to 1200ºC) for short times (< 500 seconds). The data can be fit equally well to the parabolic model as it can to the linearparabolic or parallel oxidation models. The activation energy derived from analysis of the parabolic rate constant is 0.94 eVand is the same at 1.0 and 0.1 atmosphere dry O2. It was also found that the parabolic rate constant displayed a linear dependence on the O2 pressure.

The Wet‐Oxidation of a Cu(111) Foil Coated by Single Crystal Graphene

2021 ◽  
pp. 2102697
Author(s):  
Da Luo ◽  
Xiao Wang ◽  
Bao‐Wen Li ◽  
Chongyang Zhu ◽  
Ming Huang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Wet Oxidation

Molecular Organization of Polylactides Immobilized on a Flat Surface: Observation of Single Crystal Arrays of Homochiral and Stereocomplexed Polylactides

2012 ◽  
Vol 45 (15) ◽  
pp. 5993-6001 ◽  
Author(s):  
Hajime Nakajima ◽  
Maho Nakajima ◽  
Tomoko Fujiwara ◽  
Chan Woo Lee ◽  
Takashi Aoki ◽  
...  
Keyword(s):  
Single Crystal ◽  
Flat Surface ◽  
Molecular Organization ◽  
Surface Observation

Formation of Titanium Silicide At Atmospheric Pressure

1982 ◽  
Vol 14 ◽  
Author(s):  
Peter Revesz ◽  
Jeno Gyimesi ◽  
Jozsef Gyulai
Keyword(s):  
Silicon Dioxide ◽  
Single Crystal ◽  
Oxide Layer ◽  
Atmospheric Pressure ◽  
Titanium Silicide ◽  
Lateral Growth ◽  
Vertical Growth ◽  
High Doses

ABSTRACTTwo problems connected with the growth of Ti-silicide have been investigated. It is shown if a silicon dioxide step on a single crystal of silicon covered with titanium is annealed then, following vertical growth on the silicon part, lateral growth of Ti-silicide takes place over the oxide layer. We also studied the problems of Ti-silicide growthon samples implanted with high doses of Sb, As, P, Ar and O prior to Ti evaporation.

Reliability Improvement in Silicon Dioxide

2012 ◽  
Vol 725 ◽  
pp. 231-234
Author(s):  
Masashi Minami ◽  
Yoichi Kamiura
Keyword(s):  
Silicon Dioxide ◽  
The Other ◽  
Si Substrate ◽  
Silicon Oxidation ◽  
Reliability Improvement ◽  
Dry Oxidation ◽  
Characteristic Values

There are two typical methods for silicon oxidation. One is pyrogenic oxidation using oxygen and hydrogen, the other is dry oxidation using oxygen. In this study various properties of these oxidation films were compared. The pyrogenic oxidation in turn could show better characteristic values in the all experiments. Furthermore, once dry oxidation was used even before gate oxidation, we found that dry oxidation made a source of defects generation at surface of the Si substrate.

Finite Element Modeling of Diamond Indentation Creep in MgO

2011 ◽  
Vol 393-395 ◽  
pp. 106-109
Author(s):  
Jin Hua Hu ◽  
Leslie Henshall
Keyword(s):  
Activation Energy ◽  
Finite Element ◽  
Flow Stress ◽  
Low Temperature ◽  
Single Crystal ◽  
Creep Model ◽  
Dislocation Creep ◽  
Indentation Creep ◽  
Low Temperature Creep ◽  
Shear Flow Stress

The modified dislocation creep model and the power law breakdown creep model were proposed to be used in the indentation creep deformation analyses for single crystal MgO at low temperature varying from 293K to 873K. A FE indentation creep modeling procedure was proposed and implemented. The activation energy and the shear flow stress for low temperature creep in single crystal MgO were predicted based on the analytical indentation creep analyses.

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