Stress dependence of dislocation glide activation energy in single-crystal silicon-germanium alloys up to 2.6 GPa

1988 ◽  
Vol 38 (17) ◽  
pp. 12383-12387 ◽  
Author(s):  
Brian W. Dodson ◽  
Jeffrey Y. Tsao
Keyword(s):  
Activation Energy ◽  
Single Crystal ◽  
Silicon Germanium ◽  
Single Crystal Silicon ◽  
Stress Dependence ◽  
Crystal Silicon ◽  
Dislocation Glide ◽  
Silicon Germanium Alloys

Hydrogen Neutralization of Chalcogen double donor Centers in Single-Crystal Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
Gerhard Pensl ◽  
G. Roos ◽  
P. Stolz ◽  
N. M. Johnson ◽  
C. Holm
Keyword(s):  
Activation Energy ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Doped Silicon ◽  
Dlts Spectra

ABSTRACTChalcogen (S,Se,Te) -doped silicon samples were hydrogen neutralized by different passivation techniques. The electrically active double-donor densities were determined by DLTS measurements. DLTS spectra reveal that both donor levels recover simultaneously. The activation energy for re-activation of neutralized isolated and pure pair sulphur double-donors is Ea(So/+) = 2,13 ± 0,15 eV and Ea(S2o/+) = 2,1 ± 0,15 eV, respectively.

Investigation of the Promotion Effect of Germane in Low Temperature Uhv-Cvd Silicon

1987 ◽  
Vol 102 ◽  
Author(s):  
Kevin J. Uram ◽  
Bernard S. Meyerson
Keyword(s):  
Low Temperature ◽  
Silicon Germanium ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Single Crystal Silicon ◽  
Gas Mixture ◽  
Crystal Silicon ◽  
Germanium Silicon ◽  
Kinetics Of ◽  
Silicon Germanium Alloys

ABSTRACTHigh quality, low defect density, single crystalline silicon/germanium alloys have been grown on Si(100) substrate wafers in a low temperature UHV-CVD reactor. Using a silane/germane gaseous source, the growth rate of the epitaxial layer increases from 4 angstroms/minute with no germane present to 82 angstroms/minute with 12.7% germane present in the reaction gas mixture at 550C. The germanium/silicon ratio in the deposited alloy is a factor of two greater than the germane/silane ratio in the reaction gas mixture. The kinetics of this effect are studied and correlation to UHV hydrogen thermal desorption from single crystal silicon-germanium alloys are made.

scholarly journals Механизм диффузии монооксидов углерода и кремния в кристалле кубического карбида кремния

2019 ◽  
Vol 61 (12) ◽  
pp. 2334
Author(s):  
С.А. Кукушкин ◽  
А.В. Осипов
Keyword(s):  
Activation Energy ◽  
Single Crystal ◽  
Crystalline Silicon ◽  
Single Crystal Silicon ◽  
Silicon Monoxide ◽  
Vacancy Mechanism ◽  
Reaction Products ◽  
Crystal Silicon ◽  
Single Crystal Sic ◽  
Co Gas

The basic processes are described occurring in the case of the diffusion of carbon monoxide CO and silicon monoxide SiO through a layer of single-crystal silicon carbide SiC. This problem arises when a single-crystal SiC layer is grown by the method of atom substitution due to the chemical reaction of a crystalline silicon substrate with CO gas. The reaction products are the epitaxial layer of SiC and the gas SiO. It has been shown that CO and SiO molecules decompose in SiC crystals. Oxygen atoms migrate through interstitials in the [110] direction only with an activation energy of 2.6 eV. The migration of Si and C atoms occurs by the vacancy mechanism in the corresponding sublattices with activation energies of 3.6 eV and 3.9 eV, respectively, and also in the [110] direction only.

scholarly journals Transfer techniques for single-crystal silicon/germanium nanomembranes and their application in flexible electronics

2018 ◽  
Vol 48 (6) ◽  
pp. 670-687
Author(s):  
Gongjin LI ◽  
Enming SONG ◽  
Qinglei GUO ◽  
Gaoshan HUANG ◽  
Yongfeng MEI
Keyword(s):  
Single Crystal ◽  
Flexible Electronics ◽  
Silicon Germanium ◽  
Single Crystal Silicon ◽  
Crystal Silicon

scholarly journals Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

2016 ◽  
Vol 2016 ◽  
pp. 1-11 ◽  
Author(s):  
Callum G. Littlejohns ◽  
Thalia Dominguez Bucio ◽  
Milos Nedeljkovic ◽  
Hong Wang ◽  
Goran Z. Mashanovich ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Photonics ◽  
Silicon Germanium ◽  
Low Cost ◽  
Single Crystal Silicon ◽  
Photonic Devices ◽  
Device Fabrication ◽  
Crystal Silicon ◽  
Seamless Integration ◽  
Active Devices

The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 μm and 1.55 μm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect-free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for the state-of-the-art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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