Structural Characterization and Schottky Barrier Height Measurements of Epitaxial NiSi2 on Si

1985 ◽  
Vol 54 ◽  
Author(s):  
B. D. Hunt ◽  
L. J. Schowalter ◽  
N. Lewis ◽  
E. L. Hall ◽  
R. J. Hauenstein ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Phenomenological Model ◽  
Entire Range ◽  
Schottky Barrier Height ◽  
Type A ◽  
Type B ◽  
Planar Defects ◽  
Si Substrates ◽  
Barrier Heights

ABSTRACTSingle crystal NiSi2 films of type A and type B orientations with thicknesses ranging from 70–600Å have been grown on (111), n-type Si substrates. TEM and channeling measurements indicate that these films are of excellent epitaxial quality with uniform orientations over the entire range of observation. HRTEM studies show regular and atomically abrupt interfaces for both NiSi2 orientations with occasional localized planar defects. I-V and photoresponse measurements of the Schottky barrier heights(SBH) of the type A films yield consistent values of 0.62±.01eV. However, for type B films I-V measurements give a SBH of 0.69±.01eV while the photoresponse results give 0.77±.05eV. This discrepancy can be explained quantitatively by a phenomenological model in which a small percentage of low barrier height regions is incorporated into the type B films.

scholarly journals Schottky barrier height measurements of type‐A and type‐B NiSi2 epilayers on Si

1986 ◽  
Vol 4 (3) ◽  
pp. 860-864 ◽  
Author(s):  
R. J. Hauenstein ◽  
T. E. Schlesinger ◽  
T. C. McGill ◽  
B. D. Hunt ◽  
L. J. Schowalter
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Type A ◽  
Type B

The Electronic Properties of Silicon-Silicide Epitaxial Interfaces

1987 ◽  
Vol 102 ◽  
Author(s):  
Stefano Ossicini ◽  
O. Bisi
Keyword(s):  
Detailed Analysis ◽  
Electronic Properties ◽  
Schottky Barrier ◽  
Electronic States ◽  
Type A ◽  
Type B ◽  
Barrier Heights ◽  
Densities Of States

ABSTRACTThe selfconsistent electronic properties of the epitaxial Si(111)-NiSi2 interface are computed for the experimentally observed type-A and type-B growth orientations. The densities of states projected on the various sites provide a detailed analysis of the siliconsilicide interface electronic states. The measured Schottky barrier heights may be interpreted by assuming that deviations from epitaxy must be taken into account.

Internal Photoemission Measurements for the Determination of Schottky Barrier Height on a-Si, Ge:H, F Alloys

1986 ◽  
Vol 70 ◽  
Author(s):  
V. Chu ◽  
S. Aljishi ◽  
D. Slobodin ◽  
S. Wagner
Keyword(s):  
Glow Discharge ◽  
Schottky Barrier ◽  
Entire Range ◽  
Schottky Barrier Height ◽  
Alloy Composition ◽  
Similar Increase ◽  
Internal Photoemission ◽  
Barrier Heights ◽  
Optical Gap

ABSTRACTWe report measurements of internal photoemission from Ni, Au, and Pd contacts into a-Si, Ge:H, F alloys. The alloys were prepared by d.c. glow discharge decomposition of either SiF4 or SiH4 and GeF4, and H2. The sharp exponential drop in subgap absorption in these alloys, measured by the Constant Photocurrent Method (CPM), allows the determination of barrier heights using internal photoemission thresholds. The barrier heights of Ni, Au and Pd contacts are presented as a function of alloy composition. We find Ni has the lowest barrier heights while Au shows the highest barrier heights over the entire range of Eopt. We also find that for the Ni and Au contacts, ΦB varies as 1/2 the optical gap. In the case of Pd, ΦB shows a dependence of 1/3 the optical gap. We observed an increase in ΦB for Pd contacts when etched with a diluted HF solution prior to metallization. A similar increase in ΦD was not observed for the Au and Ni contacts.

Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition

2008 ◽  
Vol 600-603 ◽  
pp. 373-376
Author(s):  
Masashi Kato ◽  
Kazuya Ogawa ◽  
Masaya Ichimura
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Electrochemical Deposition ◽  
Schottky Barrier Height ◽  
Proper Time ◽  
Etch Pits ◽  
Barrier Heights ◽  
Etch Pit ◽  
Deposition Voltage ◽  
Deposited Films

We identified regions with low Schottky barrier height on 4H-SiC surfaces by the electrochemical deposition of ZnO. When we adopt an appropriate deposition voltage, ZnO grew preferentially at the regions with the low Schottky barrier height. Thus, we were able to identify the ZnO film only at these regions if we stopped the deposition at a proper time. We compared positions of the deposited film and etch pit after molten NaOH etching. As a result, in a bulk 4H-SiC, the films were deposited around some of micropipe positions. On the other hand, in an epitaxial 4H-SiC layer, although approximately a half of deposited films seemed to grow at the etch-pit defect positions, other deposited films were grown at positions without etch-pit defects. Therefore the Schottky barrier heights were reduced by not only defects emerging as etch pits but also other kind of origins in epitaxial 4H-SiC.

Gaussian distribution of Schottky barrier heights on SnO2 nanowires

2011 ◽  
Vol 1406 ◽  
Author(s):  
Cleber A. Amorim ◽  
Olivia M. Berengue ◽  
Luana Araújo ◽  
Edson R. Leite ◽  
Adenilson J. Chiquito
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Series Resistance ◽  
Small Deviation ◽  
Thermionic Emission ◽  
Barrier Heights ◽  
Sno2 Nanowires ◽  
Different Temperatures

ABSTRACTIn this work, we studied metal/SnO2 junctions using transport properties. Parameters such as barrier height, ideality factor and series resistance were estimated at different temperatures. Schottky barrier height showed a small deviation of the theoretical value mainly because the barrier was considered fixed as described by ideal thermionic emission-diffusion model. These deviations have been explained by assuming the presence of barrier height inhomogeneities. Such assumption can also explain the high ideality factor as well as the Schottky barrier height and ideality factor dependence on temperature.

scholarly journals Relation between Schottky Barrier Height and Crystalline Alignment of Al Films on Si Substrates

Materia Japan ◽  
2001 ◽  
Vol 40 (12) ◽  
pp. 998-998
Author(s):  
Yoshinao Miura ◽  
Shinji Fujieda ◽  
Kazuyuki Hirose
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Si Substrates

A Tunable Schottky Barrier to n-GaAs Using Ni(Ga,Al) Contacts

1992 ◽  
Vol 281 ◽  
Author(s):  
C-P. Chen ◽  
C-H. Jan ◽  
Y. A. Chang ◽  
T. Kuech
Keyword(s):  
Kinetic Analysis ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interfacial Stability ◽  
Interface Stability ◽  
Barrier Heights ◽  
Wide Range

ABSTRACTThe Schottky barrier heights of Ni(GaxAl1−x)/n-GaAs contacts have been measured by the I-V and C-V techniques. Contacts with x = 0.0, 0.25, 0.5, 0.75, and 1.0 have been prepared, and a wide range of Schottky barrier heights, 0.66 to 0.96 eV, can be achieved by varying the composition of the alloy contacts. After annealing at 400 °C, the barrier heights increase continuously from 0.66 to 0.96 eV as x decreases. The interfacial stability between the Ni(Ga,Al) contacts and GaAs has been examined by SAM. The modulation of the Schottky barrier height and the interface stability are explained by a thermodynamic and kinetic analysis of the GaAs-NiGa-NiAl-AlAs system.

W/Si Schottky Diodes: Effect of Metal Deposition Conditions on the Barrier Height

1994 ◽  
Vol 356 ◽  
Author(s):  
M. Mamor ◽  
E. Finkman ◽  
F. Meyer ◽  
K. Bouziane
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Barrier Heights ◽  
P Type ◽  
Deposition Conditions

AbstractThe Schottky barrier heights (ΦB) for W/Si Schottky diodes have been determined from I–V measurements. The effects of the sputter deposition conditions of the W-films were studied. X-ray diffraction was used to examine the structure and the lattice parameters of the W-films while the stress was determined by using a profilometer from the measurement of the curvature of the substrate after metallization. The resistivity is determined by using a four-point probe. A compressive-to-tensile stress transition is associated with the transformation of the ±—W-phase into the (β—W-phase as the working gas pressure is increased. These effects, which are frequently observed, coïncide with a significant increase of the W-film resistivity and a change (△ΦB≈50 meV) in the Schottky barrier height on n-type. On the other hand, the barrier height on the p-type remains constant under all the experimental conditions investigated. These results are discussed in terms of effects of strain and structure of W-films on the work function of the W, as well as in terms of modification of the pinning position of the Fermi level or else change in the value of the Richardson constant.

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