A Tunable Schottky Barrier to n-GaAs Using Ni(Ga,Al) Contacts

1992 ◽  
Vol 281 ◽  
Author(s):  
C-P. Chen ◽  
C-H. Jan ◽  
Y. A. Chang ◽  
T. Kuech
Keyword(s):  
Kinetic Analysis ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interfacial Stability ◽  
Interface Stability ◽  
Barrier Heights ◽  
Wide Range

ABSTRACTThe Schottky barrier heights of Ni(GaxAl1−x)/n-GaAs contacts have been measured by the I-V and C-V techniques. Contacts with x = 0.0, 0.25, 0.5, 0.75, and 1.0 have been prepared, and a wide range of Schottky barrier heights, 0.66 to 0.96 eV, can be achieved by varying the composition of the alloy contacts. After annealing at 400 °C, the barrier heights increase continuously from 0.66 to 0.96 eV as x decreases. The interfacial stability between the Ni(Ga,Al) contacts and GaAs has been examined by SAM. The modulation of the Schottky barrier height and the interface stability are explained by a thermodynamic and kinetic analysis of the GaAs-NiGa-NiAl-AlAs system.

Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition

2008 ◽  
Vol 600-603 ◽  
pp. 373-376
Author(s):  
Masashi Kato ◽  
Kazuya Ogawa ◽  
Masaya Ichimura
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Electrochemical Deposition ◽  
Schottky Barrier Height ◽  
Proper Time ◽  
Etch Pits ◽  
Barrier Heights ◽  
Etch Pit ◽  
Deposition Voltage ◽  
Deposited Films

We identified regions with low Schottky barrier height on 4H-SiC surfaces by the electrochemical deposition of ZnO. When we adopt an appropriate deposition voltage, ZnO grew preferentially at the regions with the low Schottky barrier height. Thus, we were able to identify the ZnO film only at these regions if we stopped the deposition at a proper time. We compared positions of the deposited film and etch pit after molten NaOH etching. As a result, in a bulk 4H-SiC, the films were deposited around some of micropipe positions. On the other hand, in an epitaxial 4H-SiC layer, although approximately a half of deposited films seemed to grow at the etch-pit defect positions, other deposited films were grown at positions without etch-pit defects. Therefore the Schottky barrier heights were reduced by not only defects emerging as etch pits but also other kind of origins in epitaxial 4H-SiC.

Gaussian distribution of Schottky barrier heights on SnO2 nanowires

2011 ◽  
Vol 1406 ◽  
Author(s):  
Cleber A. Amorim ◽  
Olivia M. Berengue ◽  
Luana Araújo ◽  
Edson R. Leite ◽  
Adenilson J. Chiquito
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Series Resistance ◽  
Small Deviation ◽  
Thermionic Emission ◽  
Barrier Heights ◽  
Sno2 Nanowires ◽  
Different Temperatures

ABSTRACTIn this work, we studied metal/SnO2 junctions using transport properties. Parameters such as barrier height, ideality factor and series resistance were estimated at different temperatures. Schottky barrier height showed a small deviation of the theoretical value mainly because the barrier was considered fixed as described by ideal thermionic emission-diffusion model. These deviations have been explained by assuming the presence of barrier height inhomogeneities. Such assumption can also explain the high ideality factor as well as the Schottky barrier height and ideality factor dependence on temperature.

W/Si Schottky Diodes: Effect of Metal Deposition Conditions on the Barrier Height

1994 ◽  
Vol 356 ◽  
Author(s):  
M. Mamor ◽  
E. Finkman ◽  
F. Meyer ◽  
K. Bouziane
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Barrier Heights ◽  
P Type ◽  
Deposition Conditions

AbstractThe Schottky barrier heights (ΦB) for W/Si Schottky diodes have been determined from I–V measurements. The effects of the sputter deposition conditions of the W-films were studied. X-ray diffraction was used to examine the structure and the lattice parameters of the W-films while the stress was determined by using a profilometer from the measurement of the curvature of the substrate after metallization. The resistivity is determined by using a four-point probe. A compressive-to-tensile stress transition is associated with the transformation of the ±—W-phase into the (β—W-phase as the working gas pressure is increased. These effects, which are frequently observed, coïncide with a significant increase of the W-film resistivity and a change (△ΦB≈50 meV) in the Schottky barrier height on n-type. On the other hand, the barrier height on the p-type remains constant under all the experimental conditions investigated. These results are discussed in terms of effects of strain and structure of W-films on the work function of the W, as well as in terms of modification of the pinning position of the Fermi level or else change in the value of the Richardson constant.

scholarly journals Schottky diodes based on 4H-SiC epitaxial layers

2021 ◽  
Vol 2103 (1) ◽  
pp. 012235
Author(s):  
A M Strel’chuk ◽  
E V Kalinina
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Alternative Explanation ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Epitaxial Layers ◽  
Barrier Heights ◽  
Current Voltage ◽  
Significant Spread

Abstract Forward and reverse current-voltage (IV) characteristics of Cr-SiC (4H) Schottky diodes based on epitaxial layers with doping (1-3)· 1015 cm-3 were studied in the temperature range of 300-550 K. It is shown that in many cases the IV characteristics are close to ideal, but a significant spread of the forward IV characteristics of diodes manufactured in the same way on the same epitaxial layer was found, probably due to the spread of the Schottky barrier heights reaching 0.3 eV. Heating of the diode, as well as packaging, can also change the Schottky barrier height. An alternative explanation suggests the presence of a powerful shunt.

Structural Characterization and Schottky Barrier Height Measurements of Epitaxial NiSi2 on Si

1985 ◽  
Vol 54 ◽  
Author(s):  
B. D. Hunt ◽  
L. J. Schowalter ◽  
N. Lewis ◽  
E. L. Hall ◽  
R. J. Hauenstein ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Phenomenological Model ◽  
Entire Range ◽  
Schottky Barrier Height ◽  
Type A ◽  
Type B ◽  
Planar Defects ◽  
Si Substrates ◽  
Barrier Heights

ABSTRACTSingle crystal NiSi2 films of type A and type B orientations with thicknesses ranging from 70–600Å have been grown on (111), n-type Si substrates. TEM and channeling measurements indicate that these films are of excellent epitaxial quality with uniform orientations over the entire range of observation. HRTEM studies show regular and atomically abrupt interfaces for both NiSi2 orientations with occasional localized planar defects. I-V and photoresponse measurements of the Schottky barrier heights(SBH) of the type A films yield consistent values of 0.62±.01eV. However, for type B films I-V measurements give a SBH of 0.69±.01eV while the photoresponse results give 0.77±.05eV. This discrepancy can be explained quantitatively by a phenomenological model in which a small percentage of low barrier height regions is incorporated into the type B films.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements

2011 ◽  
Vol 98 (16) ◽  
pp. 162111 ◽  
Author(s):  
J. Kováč ◽  
R. Šramatý ◽  
A. Chvála ◽  
H. Sibboni ◽  
E. Morvan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Optical Measurements
Sign in / Sign up

Export Citation Format

Share Document