The Electronic Properties of Silicon-Silicide Epitaxial Interfaces
ABSTRACTThe selfconsistent electronic properties of the epitaxial Si(111)-NiSi2 interface are computed for the experimentally observed type-A and type-B growth orientations. The densities of states projected on the various sites provide a detailed analysis of the siliconsilicide interface electronic states. The measured Schottky barrier heights may be interpreted by assuming that deviations from epitaxy must be taken into account.
1986 ◽
Vol 4
(2)
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pp. 649
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2018 ◽
Vol 20
(38)
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pp. 24726-24734
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1986 ◽
Vol 4
(3)
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pp. 860-864
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2012 ◽
Vol 2
(3)
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pp. 30-36