Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology

2000 ◽  
Vol 21 (12) ◽  
pp. 598-600 ◽  
Author(s):  
H.H.-C. Wang ◽  
C.H. Diaz ◽  
Boon-Khim Liew ◽  
J.Y.-C. Sun ◽  
Tahui Wang
Keyword(s):  
Cmos Technology ◽  
Deep Submicron ◽  
Input Output ◽  
Hot Carrier ◽  
Enhanced Diffusion ◽  
Reliability Improvement ◽  
Transient Enhanced Diffusion ◽  
Submicron Cmos

Effects of Carbon Co-Implantation on Transient Enhanced Diffusion and Performances of the Phosphorus Doped Ultra-Shallow Junction Nano NMOSFET

2013 ◽  
Vol 284-287 ◽  
pp. 98-102
Author(s):  
Hung Yu Chiu ◽  
Yean Kuen Fang ◽  
Feng Renn Juang
Keyword(s):  
Cmos Technology ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Technology Applications ◽  
Implantation Process ◽  
Phosphorus Doped

The carbon (C) co-implantation and advanced flash anneal were employed to form the ultra shallow junction (USJ) for future nano CMOS technology applications. The effects of the C co-implantation process on dopant transient enhanced diffusion (TED) of the phosphorus (P) doped nano USJ NMOSFETs were investigated in details. The USJ NMOSFETs were prepared by a foundry’s 55 nano CMOS technology. Various implantation energies and doses for both C and P ions were employed. Results show the suppression of the TED is strongly dependent on both C and P implantation conditions. Besides, the mechanisms of P TED and suppression by C ion co-implantation were illustrated comprehensively with schematic models.

A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology

2012 ◽  
Vol 47 (6) ◽  
pp. 1394-1407 ◽  
Author(s):  
Marek Gersbach ◽  
Yuki Maruyama ◽  
Rahmadi Trimananda ◽  
Matt W. Fishburn ◽  
David Stoppa ◽  
...  
Keyword(s):  
Single Photon ◽  
Cmos Technology ◽  
Image Sensor ◽  
Deep Submicron ◽  
Low Noise ◽  
Time Resolved ◽  
Submicron Cmos
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