Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation

1999 ◽  
Vol 86 (11) ◽  
pp. 6039-6042 ◽  
Author(s):  
I. O. Usov ◽  
A. A. Suvorova ◽  
V. V. Sokolov ◽  
Y. A. Kudryavtsev ◽  
A. V. Suvorov
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Suppression of transient enhanced diffusion following in situ photoexcitation during boron ion implantation

1995 ◽  
Vol 67 (15) ◽  
pp. 2158-2160 ◽  
Author(s):  
J. Ravi ◽  
Yu. Erokhin ◽  
G. A. Rozgonyi ◽  
C. W. White
Keyword(s):  
Ion Implantation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation

2000 ◽  
Vol 610 ◽  
Author(s):  
L. S. Robertson ◽  
P. N. Warnes ◽  
K. S. Jones ◽  
S. K. Earles ◽  
M. E. Law ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Species ◽  
Amorphous Layer ◽  
Experimental Conditions ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Transmission Electron ◽  
Species Effect ◽  
Boron Diffusivity

AbstractThe interaction between boron and excess silicon interstitials caused by ion implantation hinders the formation of ultra-shallow, low resistivity junctions. Previous studies have shown that fluorine reduces boron transient enhanced diffusion, however it is unclear whether this observed phenomenon is due to the fluorine interacting with the boron atoms or silicon self-interstitials. Amorphization of a n-type Czochralski wafer was achieved with a 70 keV Si+ implantation at a dose of 1×1015/cm2. The Si+ implant produced a 1500Å deep amorphous layer, which was then implanted with 1.12 keV 1×1015/cm2 B+. The samples were then implanted with a dose of 2×1015/cm2F+ at various energies ranging from 2 keV to 36 keV. Ellipsometry measurements showed no increase in the amorphous layer thickness from either the boron or fluorine implants. The experimental conditions allowed the chemical species effect to be studied independent of the implant damage caused by the fluorine implant. Post-implantation anneals were performed in a tube furnace at 750° C. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Transmission electron microscopy (TEM) was used to study the end-of-range defect evolution. The addition of fluorine reduces the boron transient enhanced diffusion for all fluorine energies. It was observed that both the magnitude of the boron diffusivity and the concentration gradient of the boron profile vary as a function of fluorine energy.

scholarly journals GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation

2003 ◽  
Vol 93 (9) ◽  
pp. 5140-5142 ◽  
Author(s):  
I. Usov ◽  
N. Parikh ◽  
Y. Kudriavtsev ◽  
R. Asomoza ◽  
Z. Reitmeier ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Enhanced Diffusion

Transient enhanced diffusion from decaborane molecular ion implantation

1998 ◽  
Vol 73 (14) ◽  
pp. 2015-2017 ◽  
Author(s):  
Aditya Agarwal ◽  
H.-J. Gossmann ◽  
D. C. Jacobson ◽  
D. J. Eaglesham ◽  
M. Sosnowski ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Molecular Ion ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Mechanism of Enhanced Diffusion of Aluminum in 6H-SiC in the Process of High-Temperature Ion Implantation

1997 ◽  
Vol 504 ◽  
Author(s):  
Igor O. Usov ◽  
A. A. Suvorova ◽  
V. V. Sokolov ◽  
Y. A. Kudryavtsev ◽  
A. V. Suvorov
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
High Temperature ◽  
Ion Implantation ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Mechanism ◽  
Enhanced Diffusion ◽  
Sic Wafer ◽  
Secondary Ion

ABSTRACTThe diffusion of Al in 6H-SiC during high-temperature ion implantation was studied using secondary ion mass spectrometry. A 6H-SiC wafer was implanted with 50 keV Al ions to a dose of 1.4E16 cm−2 in the high temperature range 1300°–1800TC and at room temperature. There are two diffusion regions that can be identified in the Al profiles. At high Al concentrations the gettering related peak and profile broadening are observed. At low Al concentrations, the profiles have a sharp kink and deep penetrating diffusion tails. In the first region, the diffusion coefficient is temperature independent, while in the second it exponentially increases as a function of temperature. The Al redistribution can be explained with the substitutional-interstitial diffusion mechanism.

Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation

1998 ◽  
Vol 54 (1-3) ◽  
pp. 80-83 ◽  
Author(s):  
Norihiro Shimada ◽  
Takaaki Aoki ◽  
Jiro Matsuo ◽  
Isao Yamada ◽  
Kenichi Goto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Cluster Ion ◽  
Energy Cluster

Species and dose dependence of ion implantation damage induced transient enhanced diffusion

1996 ◽  
Vol 79 (5) ◽  
pp. 2352-2363 ◽  
Author(s):  
H. S. Chao ◽  
S. W. Crowder ◽  
P. B. Griffin ◽  
J. D. Plummer
Keyword(s):  
Ion Implantation ◽  
Dose Dependence ◽  
Enhanced Diffusion ◽  
Implantation Damage ◽  
Transient Enhanced Diffusion
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