Large Grain Growth of Silicon Films on Low Temperature Glass Substrates

1985 ◽  
Vol 53 ◽  
Author(s):  
C. E. Bleil ◽  
J. R. Troxell
Keyword(s):  
Low Temperature ◽  
Glass Substrate ◽  
Large Scale ◽  
Argon Laser ◽  
Spot Size ◽  
Silicon Films ◽  
Recrystallization Process ◽  
Molten Silicon ◽  
Glass Substrates ◽  
Wide Range

ABSTRACTArgon laser recrystallization of silicon films deposited on low temperature glass substrates offers the potential for development of large scale matrix addressable displays incorporating on-glass line drivers and logic circuitry. In order to achieve this promise, the challenge of containing molten silicon, at 1685 K, in close proximity to a glass substrate (Corning 7059) which has an annealing temperature of 914 K, must be met. We have successfully recrystallized areas of several squared millimeters of 500 nm thick silicon films without cracking on 7059 glass substrates. This was achieved by the incorporation of multiple film layers interposed between the silicon and the glass substrate, which serve to control the thermal gradients which occur during the recrystallization process. Grains in the recrystallized films are typically 10µm wide and several hundred µm long, achieved using a laser spot size of approximately 70 µµµµm diameter and a scan rate of 15 cm/s. Comparable results were obtained for a wide range of laser powers, from 7.5 to 9.2 W.

A simple SVS method for obtaining large-scale WO3 nanowire cold cathode emitters at atmospheric pressure and low temperature

CrystEngComm ◽  
2015 ◽  
Vol 17 (5) ◽  
pp. 1065-1072 ◽  
Author(s):  
Zhuo Xu ◽  
Fei Liu ◽  
Daokun Chen ◽  
Tongyi Guo ◽  
Shunyu Jin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Glass Substrate ◽  
Atmospheric Pressure ◽  
Large Scale ◽  
Nanowire Arrays ◽  
Cold Cathode ◽  
Emission Properties

A novel SVS technique is used to prepare cathode WO3 nanowire arrays with excellent emission properties on a glass substrate.

Recent Progress of Low Temperature Poly Si TFT Technology

1998 ◽  
Vol 508 ◽  
Author(s):  
Kiyoshi Yoneda
Keyword(s):  
Low Temperature ◽  
Production Technology ◽  
Glass Substrate ◽  
Large Scale ◽  
Medium Size ◽  
Existing Problems ◽  
Large Glass ◽  
Major Market ◽  
Large Size ◽  
Production Technologies

AbstractSince being introduced to the production line in 1996, replacing the first generation a-Si TFT line, low-temperature poly-Si production technology aimed at manufacturing small and medium size LCD products has improved steadily corresponding to customers' requirements for rapid growth of the DVC and DSC markets. In the future, this production technology must progress to actual industry technology levels in order to cope with production applied not only to large size displays, which have a major market share in the present display market, but also to a large glass substrate, which effectively cuts the cost of products, although improvement of production yield and productivity in terms of pursuing cost reduction must be proceeded.This paper has described existing problems of inherent low-temperature poly-Si TFT processes and their relating additional processes in present production methods. We have also discussed updating production technologies. To cope with production for a large size display, it is necessary to establish fabrication technology of higher performance TFTs with electron mobility larger than 200cm2/V s. We believe that one key technology is to fabricate a large-scale and highly-uniform recrystallized poly-Si film with smooth surface morphology as well as precisely-controlled grain size in production. To cope with production using a large glass substrate, it is essential to develop ELA equipment with laser power greater than 200W.

Nanotubes in Low Temperature Spray Deposited Nanocrystalline HgSe: I thin films

2006 ◽  
Vol 922 ◽  
Author(s):  
Ranga Rao Arnepalli ◽  
Viresh Dutta
Keyword(s):  
Low Temperature ◽  
Applied Voltage ◽  
Spray Deposition ◽  
Average Length ◽  
Average Diameter ◽  
Spot Size ◽  
Vapor Liquid Solid ◽  
Cubic Crystal ◽  
Glass Substrates ◽  
Edax Analysis

AbstractHgSe nanotubes have been prepared by spray deposition of solvothermally synthesized HgSe: Iodine nanoparticles on glass substrates at low temperature (200°C). Spray deposition was done without voltage and with an externally applied voltage (700V) to the nozzle and it is found from TEM studies that the average length of the nanotubes increases in case of the films deposited with applied voltage compared to that of without voltage. But there is no change in the average diameter (~ 35 nm). The nanotubes are found to have cubic crystal structure. Iodine is found to act as a catalyst and helps in the growth of nanotubes. The growth mechanism of the nanotubes is analogous to the well known solution-liquid-solid/vapor-liquid-solid (SLS/VLS) mechanism. The EDAX analysis of the tip of the nanotube reveals the presence of Hg, Se and Iodine in the ratio of 73:2:24 for the spot size of <1μm.

Optimization of low-temperature poly-Si TFT-LCDs and a large-scale production line for large glass substrates

2001 ◽  
Vol 9 (3) ◽  
pp. 173-180 ◽  
Author(s):  
Kiyoshi Yoneda ◽  
Hidenori Ogata ◽  
Shinji Yuda ◽  
Kohji Suzuki ◽  
Toshifumi Yamaji ◽  
...  
Keyword(s):  
Low Temperature ◽  
Production Line ◽  
Large Scale ◽  
Scale Production ◽  
Glass Substrates ◽  
Large Glass ◽  
Large Scale Production

Recent Progress of Low Temperature Poly Si Tft Technology

1998 ◽  
Vol 507 ◽  
Author(s):  
Kiyoshi Yoneda
Keyword(s):  
Low Temperature ◽  
Production Technology ◽  
Glass Substrate ◽  
Large Scale ◽  
Medium Size ◽  
Existing Problems ◽  
Large Glass ◽  
Major Market ◽  
Large Size ◽  
Production Technologies

ABSTRACTSince being introduced to the production line in 1996, replacing the first generation a-Si TFT line, low-temperature poly-Si production technology aimed at manufacturing small and medium size LCD products has improved steadily corresponding to customers' requirements for rapid growth of the DVC and DSC markets. In the future, this production technology must progress to actual industry technology levels in order to cope with production applied not only to large size displays, which have a major market share in the present display market, but also to a large glass substrate, which effectively cuts the cost of products, although improvement of production yield and productivity in terms of pursuing cost reduction must be proceeded.This paper has described existing problems of inherent low-temperature poly-Si TFT processes and their relating additional processes in present production methods. We have also discussed updating production technologies. To cope with production for a large size display, it is necessary to establish fabrication technology of higher performance TFTs with electron mobility larger than 200cm2/V·s. We believe that one key technology is to fabricate a large-scale and highly-uniform recrystallized poly-Si film with smooth surface morphology as well as precisely-controlled grain size in production. To cope with production using a large glass substrate, it is essential to develop ELA equipment with laser power greater than 200W.

Low-Temperature Silicon Films Deposition by Pulsed Cathodic Arc Process for Microsystem Technologies

2004 ◽  
Vol 808 ◽  
Author(s):  
Hui Xia ◽  
Yan Yang ◽  
Paul L. Bergstrom
Keyword(s):  
Low Temperature ◽  
Deposition Rate ◽  
Film Growth ◽  
Silicon Film ◽  
High Energy ◽  
Silicon Films ◽  
Vacuum Arc ◽  
High Deposition Rate ◽  
Glass Substrates ◽  
Pulsed Arc

ABSTRACTThe deposition of silicon films was investigated for the first time by the pulsed cathodic vacuum arc process. This method has been employed to take the advantages of its low deposition temperature, high deposition rate, and high-energy capabilities, coupled with its relatively low operational cost. Heavily doped silicon films were deposited on silicon and glass substrates at temperatures below 100°C with pulsed deposition rate of 0.2nm/A·s. Pulsed arc currents up to 400A in 1∼5ms pulse width with 20∼300 pulses per second were studied. Compared with the direct current (D.C.) cathodic vacuum arc, numerous possibilities exist for the pulsed arc deposition to suit specific targeted film growth. The characterization of the films was carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD) in terms of materials morphological and structural properties. The production of high quality silicon film materials at low temperature would further enable the integration of microsystems with microelectronics.

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

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