A simple SVS method for obtaining large-scale WO3 nanowire cold cathode emitters at atmospheric pressure and low temperature

CrystEngComm ◽  
2015 ◽  
Vol 17 (5) ◽  
pp. 1065-1072 ◽  
Author(s):  
Zhuo Xu ◽  
Fei Liu ◽  
Daokun Chen ◽  
Tongyi Guo ◽  
Shunyu Jin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Glass Substrate ◽  
Atmospheric Pressure ◽  
Large Scale ◽  
Nanowire Arrays ◽  
Cold Cathode ◽  
Emission Properties

A novel SVS technique is used to prepare cathode WO3 nanowire arrays with excellent emission properties on a glass substrate.

Low-Temperature Fabrication of Cold Cathode WO2 Nanowire Arrays on Glass Substrate and Improvement of their Working Performance

2017 ◽  
Vol 2 (8) ◽  
pp. 1700029 ◽  
Author(s):  
Yan Tian ◽  
Xun Yang ◽  
Tongyi Guo ◽  
Luxi Peng ◽  
Haibo Gan ◽  
...  
Keyword(s):  
Low Temperature ◽  
Glass Substrate ◽  
Nanowire Arrays ◽  
Cold Cathode ◽  
Working Performance

Recent Progress of Low Temperature Poly Si TFT Technology

1998 ◽  
Vol 508 ◽  
Author(s):  
Kiyoshi Yoneda
Keyword(s):  
Low Temperature ◽  
Production Technology ◽  
Glass Substrate ◽  
Large Scale ◽  
Medium Size ◽  
Existing Problems ◽  
Large Glass ◽  
Major Market ◽  
Large Size ◽  
Production Technologies

AbstractSince being introduced to the production line in 1996, replacing the first generation a-Si TFT line, low-temperature poly-Si production technology aimed at manufacturing small and medium size LCD products has improved steadily corresponding to customers' requirements for rapid growth of the DVC and DSC markets. In the future, this production technology must progress to actual industry technology levels in order to cope with production applied not only to large size displays, which have a major market share in the present display market, but also to a large glass substrate, which effectively cuts the cost of products, although improvement of production yield and productivity in terms of pursuing cost reduction must be proceeded.This paper has described existing problems of inherent low-temperature poly-Si TFT processes and their relating additional processes in present production methods. We have also discussed updating production technologies. To cope with production for a large size display, it is necessary to establish fabrication technology of higher performance TFTs with electron mobility larger than 200cm2/V s. We believe that one key technology is to fabricate a large-scale and highly-uniform recrystallized poly-Si film with smooth surface morphology as well as precisely-controlled grain size in production. To cope with production using a large glass substrate, it is essential to develop ELA equipment with laser power greater than 200W.

Large Grain Growth of Silicon Films on Low Temperature Glass Substrates

1985 ◽  
Vol 53 ◽  
Author(s):  
C. E. Bleil ◽  
J. R. Troxell
Keyword(s):  
Low Temperature ◽  
Glass Substrate ◽  
Large Scale ◽  
Argon Laser ◽  
Spot Size ◽  
Silicon Films ◽  
Recrystallization Process ◽  
Molten Silicon ◽  
Glass Substrates ◽  
Wide Range

ABSTRACTArgon laser recrystallization of silicon films deposited on low temperature glass substrates offers the potential for development of large scale matrix addressable displays incorporating on-glass line drivers and logic circuitry. In order to achieve this promise, the challenge of containing molten silicon, at 1685 K, in close proximity to a glass substrate (Corning 7059) which has an annealing temperature of 914 K, must be met. We have successfully recrystallized areas of several squared millimeters of 500 nm thick silicon films without cracking on 7059 glass substrates. This was achieved by the incorporation of multiple film layers interposed between the silicon and the glass substrate, which serve to control the thermal gradients which occur during the recrystallization process. Grains in the recrystallized films are typically 10µm wide and several hundred µm long, achieved using a laser spot size of approximately 70 µµµµm diameter and a scan rate of 15 cm/s. Comparable results were obtained for a wide range of laser powers, from 7.5 to 9.2 W.

Recent Progress of Low Temperature Poly Si Tft Technology

1998 ◽  
Vol 507 ◽  
Author(s):  
Kiyoshi Yoneda
Keyword(s):  
Low Temperature ◽  
Production Technology ◽  
Glass Substrate ◽  
Large Scale ◽  
Medium Size ◽  
Existing Problems ◽  
Large Glass ◽  
Major Market ◽  
Large Size ◽  
Production Technologies

ABSTRACTSince being introduced to the production line in 1996, replacing the first generation a-Si TFT line, low-temperature poly-Si production technology aimed at manufacturing small and medium size LCD products has improved steadily corresponding to customers' requirements for rapid growth of the DVC and DSC markets. In the future, this production technology must progress to actual industry technology levels in order to cope with production applied not only to large size displays, which have a major market share in the present display market, but also to a large glass substrate, which effectively cuts the cost of products, although improvement of production yield and productivity in terms of pursuing cost reduction must be proceeded.This paper has described existing problems of inherent low-temperature poly-Si TFT processes and their relating additional processes in present production methods. We have also discussed updating production technologies. To cope with production for a large size display, it is necessary to establish fabrication technology of higher performance TFTs with electron mobility larger than 200cm2/V·s. We believe that one key technology is to fabricate a large-scale and highly-uniform recrystallized poly-Si film with smooth surface morphology as well as precisely-controlled grain size in production. To cope with production using a large glass substrate, it is essential to develop ELA equipment with laser power greater than 200W.

Large-Scale Growth of Well-Aligned SiC Tower-Like Nanowire Arrays and Their Field Emission Properties

2014 ◽  
Vol 7 (1) ◽  
pp. 526-533 ◽  
Author(s):  
Lin Wang ◽  
Chengming Li ◽  
Yang Yang ◽  
Shanliang Chen ◽  
Fengmei Gao ◽  
...  
Keyword(s):  
Field Emission ◽  
Large Scale ◽  
Nanowire Arrays ◽  
Scale Growth ◽  
Emission Properties ◽  
Field Emission Properties
Sign in / Sign up

Export Citation Format

Share Document