Improvement of Wetting of Silicon on Insulator During Lamp Zone Melting Using Plasma Nitridation

1985 ◽  
Vol 53 ◽  
Author(s):  
M. Haond ◽  
D. Dutartre ◽  
R. Pantel ◽  
A. Straboni ◽  
B. Vuillermoz
Keyword(s):  
Silicon Film ◽  
Zone Melting ◽  
Silicon Films ◽  
Silicon On Insulator ◽  
Liquid Silicon ◽  
Nitrogen Accumulation ◽  
Auger Analysis ◽  
Plasma Nitridation ◽  
Cap Layer

ABSTRACTIn the preparation of SOI films by Zone Melting Recrystallization (ZMR) a cap layer is necessary to avoid the beading up of a silicon film when it is molten over silicon. This is a consequence of a bad wetting of liquid Si on SiO2. We report the successful application of a plasma nitridation treatment of the capping oxide. We compare the behaviour of the liquid silicon films during ZMR for different capping structures. The modification of the interface is investigated by using Auger analysis. We show that a range of nitrogen accumulation at the interface provides a good wetting.

Qualitative Model for Surface Rippling of Zone Melting Recrystallized Silicon-on-Insulator Layers

1989 ◽  
Vol 157 ◽  
Author(s):  
Paul W. Mertens ◽  
Herman E. Maes
Keyword(s):  
Mass Transport ◽  
Thermal Gradient ◽  
Large Scale ◽  
Silicon Film ◽  
Zone Melting ◽  
Silicon On Insulator ◽  
Qualitative Model ◽  
Ripple Formation ◽  
Insulator Layers ◽  
Thickness Variations

ABSTRACTIn zone melting recrystallization (ZMR) of thin silicon films different mechanisms can lead to thickness variations of the obtained silicon film. In this paper we will concentrate on some of these phenomena. One is the large scale mass transport, which typically leads to a thinned region at the start of the ZMR process. Another one, which is to a certain extent related to the first one, is the typical ripple formation that occurs especially under conditions that are commonly referred to as “low thermal gradient” regime.

Optical properties of multiple energy silicon implantation in silicon films using silicon-on-insulator targets

2021 ◽  
Vol 116 ◽  
pp. 111065
Author(s):  
Chen Li ◽  
Lingxi Ouyang ◽  
Xiaonan Li ◽  
Congcong Xu ◽  
Jiyang Xie ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Films ◽  
Silicon On Insulator ◽  
Silicon Implantation

Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator

2006 ◽  
Vol 912 ◽  
Author(s):  
Justin J Hamilton ◽  
Erik JH Collart ◽  
Benjamin Colombeau ◽  
Massimo Bersani ◽  
Damiano Giubertoni ◽  
...  
Keyword(s):  
Structural Properties ◽  
Solid Phase ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
Bulk Silicon ◽  
Defect Band ◽  
Future Technology ◽  
Ultrashallow Junctions ◽  
P Type ◽  
Technology Nodes

AbstractFormation of highly activated, ultra-shallow and abrupt profiles is a key requirement for the next generations of CMOS devices, particularly for source-drain extensions. For p-type dopant implants (boron), a promising method of increasing junction abruptness is to use Ge preamorphizing implants prior to ultra-low energy B implantation and solid-phase epitaxy regrowth to re-crystallize the amorphous Si. However, for future technology nodes, new issues arise when bulk silicon is supplanted by silicon-on-insulator (SOI). Previous results have shown that the buried Si/SiO2 interface can improve dopant activation, but the effect depends on the detailed preamorphization conditions and further optimization is required. In this paper a range of B doses and Ge energies have been chosen in order to situate the end-of-range (EOR) defect band at various distances from the back interface of the active silicon film (the interface with the buried oxide), in order to explore and optimize further the effect of the interface on dopant behavior. Electrical and structural properties were measured by Hall Effect and SIMS techniques. The results show that the boron deactivates less in SOI material than in bulk silicon, and crucially, that the effect increases as the distance from the EOR defect band to the back interface is decreased. For the closest distances, an increase in junction steepness is also observed, even though the B is located close to the top surface, and thus far from the back interface. The position of the EOR defect band shows the strongest influence for lower B doses.

Fabrication of Crystalline Silicon Films for Solar Cells by a New Method of Gas-Flow Zone Melting Crystallization.

2003 ◽  
Vol 29 (2) ◽  
pp. 242-247
Author(s):  
Shuhei Yokoyama ◽  
Manabu Ihara ◽  
Hiroaki Hashizume ◽  
Hiroshi Komiyama ◽  
Chiaki Yokoyama
Keyword(s):  
Solar Cells ◽  
Gas Flow ◽  
Crystalline Silicon ◽  
Zone Melting ◽  
Silicon Films ◽  
New Method ◽  
Flow Zone

Thermal Analysis of Zone‐Melting Recrystallization of Silicon‐on‐Insulator Structures with an Infrared Heat Source: An Overview

1992 ◽  
Vol 139 (9) ◽  
pp. 2687-2695 ◽  
Author(s):  
I. N. Miaoulis ◽  
P. Y. Wong ◽  
S. M. Yoon ◽  
R. D. Robinson ◽  
C. K. Hess
Keyword(s):  
Thermal Analysis ◽  
Heat Source ◽  
Zone Melting ◽  
Silicon On Insulator

Determination of Hydrogen Density of States in Amorphous Silicon Using Fractional Evolution Experiments

1997 ◽  
Vol 467 ◽  
Author(s):  
A. J. Franz ◽  
W. B. Jackson ◽  
J. L. Gland
Keyword(s):  
Amorphous Silicon ◽  
Density Of States ◽  
Silicon Film ◽  
Mean Field ◽  
Frequency Factor ◽  
Silicon Films ◽  
Hydrogen Density ◽  
Heating And Cooling ◽  
Novel Method

ABSTRACTHydrogen plays an important role in the electronic behavior, structure and stability of amorphous silicon films. Therefore, determination of the hydrogen density of states (DOS) and correlation of the hydrogen DOS with the electronic film properties are important research goals. We have developed a novel method for determination of hydrogen DOS in silicon films, based on fractional evolution experiments. Fractional evolution experiments are performed by subjecting a silicon film to a series of linear, alternating heating and cooling ramps, while monitoring the hydrogen evolution rate. The fractional evolution data can be analyzed using two complementary memods, the fixed frequency factor approach and Arrhenius analysis. Using a rigorous, mean-field evolution model, we demonstrate the applicability of the two approaches to obtaining the hydrogen DOS in silicon films. We further validate both methods by analyzing experimental fractional evolution data foran amorphous silicon carbide film. Both types of analysis yield a similar double peaked density of states for the a-Si:C:H:D film.

Transfer of an ultrathin single crystal silicon film from a Silicon On Insulator to a polymer

2020 ◽  
pp. 100107
Author(s):  
L.G. Michaud ◽  
E. Azrak ◽  
C. Castan ◽  
F. Fournel ◽  
F. Rieutord ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Film ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Crystal Silicon

The Role of Oxygen in Zone-Melting Recrystallization of Silicon-On-Insulator Films

1983 ◽  
Vol 23 ◽  
Author(s):  
John C. C. Fan ◽  
B-Y. Tsaur ◽  
C. K. Chen ◽  
J. R. Dick ◽  
L. L. Kazmerski
Keyword(s):  
Dissolved Oxygen ◽  
Mass Spectroscopy ◽  
Zone Melting ◽  
Constitutional Supercooling ◽  
Common Origin ◽  
Silicon On Insulator ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

ABSTRACTUsing secondary-ion mass spectroscopy, we have found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite-strip-heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO2 layers. Since all zone-melting-recrystallized films to date have been bordered by SiO2 layers, regardless of the heating techniques employed, the sub-boundaries almost always present in these films may well have dissolved oxygen as their common origin.

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