Formation of Silicon on Insulator Structures By Implanted Nitrogen

1985 ◽  
Vol 53 ◽  
Author(s):  
L. Nesbit ◽  
S. Stiffler ◽  
G. Slusser ◽  
H. Vinton
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Mass Spectroscopy ◽  
Silicon Wafers ◽  
Silicon On Insulator ◽  
High Dose ◽  
Secondary Ion Mass Spectroscopy ◽  
Transmission Electron ◽  
Final Microstructure ◽  
Secondary Ion

ABSTRACTThe formation of a silicon-on-insulator (SOI) structure by implanting a high dose of N+ ions to form a buried Si3N4 layer is studied by transmission electron microscopy (TEM) and by secondary ion mass spectroscopy (SIMS). The SOI structure is formed by implanting silicon wafers with 7.5x1017 N+ ions/cm2 at 160 keV and at wafer temperatures of 400, 500, or 600°C. The implanted wafers are subsequently annealed at 1200°C for times ranging from 10 minutes to 2 hours. The microstructures and nitrogen distributions of the asimplanted and post-annealed wafers are examined in order to elucidate the development of the final microstructure.

Formation of Excess Donors During High-Dose 74Ge+ Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Z. Xia ◽  
E. Ristolainen ◽  
R. Elliman ◽  
H. Ronkainen ◽  
S. Eränen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Defects ◽  
High Dose ◽  
Donor Concentration ◽  
Materials Analysis ◽  
Si Substrates ◽  
Transmission Electron ◽  
Activation Annealing ◽  
Secondary Ion

AbstractRecently observations that high-dose Ge implantations into Si substrates caused the n-type carrier concentration to increase were attributed to residual structural defects after activation annealing [7,12]. However, co-implantation of an n-type impurity is another possibility. The origin of this excess donor concentration has been studied in this work. The possibilities of residual defects versus implantation of impurities have been investigated using two different implanters and materials analysis. Comparison of data from different implanters showed that the concentration of excess donors was sensitive to the implanter configuration. Furthermore, transmission electron microscopy (TEM), Rutherford backscattering channeling (RBS-C), and spreading resistance profiling (SRP) data showed that the excess donor effect was related to impurities rather than residual defects. Secondary-ion mass spectroscopy (SIMS) and SRP measurements confirmed that impurities such as 75As ions were present after implants. This impurity easily explains the excess donor concentration when 75Ge implants are performed into silicon wafers doped with phosphorous.

Dechannealing Study of Nanocrystalline Si:H Layers Produced by High Dose Hydrogen Irradiation of Silicon Crystals

1998 ◽  
Vol 536 ◽  
Author(s):  
V. P. Popov ◽  
A. K. Gutakovsky ◽  
I. V. Antonova ◽  
K. S. Zhuravlev ◽  
E. V. Spesivtsev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Nanocrystalline Structure ◽  
Structural Defects ◽  
High Dose ◽  
Silicon Crystals ◽  
Strong Energy ◽  
Transmission Electron ◽  
Hydrogen Implantation

AbstractA study of Si:H layers formed by high dose hydrogen implantation (up to 3x107cm-2) using pulsed beams with mean currents up 40 mA/cm2 was carried out in the present work. The Rutherford backscattering spectrometry (RBS), channeling of He ions, and transmission electron microscopy (TEM) were used to study the implanted silicon, and to identify the structural defects (a-Si islands and nanocrystallites). Implantation regimes used in this work lead to creation of the layers, which contain hydrogen concentrations higher than 15 at.% as well as the high defect concentrations. As a result, the nano- and microcavities that are created in the silicon fill with hydrogen. Annealing of this silicon removes the radiation defects and leads to a nanocrystalline structure of implanted layer. A strong energy dependence of dechanneling, connected with formation of quasi nanocrystallites, which have mutual small angle disorientation (<1.50), was found after moderate annealing in the range 200-500°C. The nanocrystalline regions are in the range of 2-4 nm were estimated on the basis of the suggested dechanneling model and transmission electron microscopy (TEM) measurements. Correlation between spectroscopic ellipsometry, visible photoluminescence, and sizes of nanocrystallites in hydrogenated nc-Si:H is observed.

Atomic-scale structural and compositional analyses of Ruddlesden-Popper planar faults in AO-excess SrTiO3 (A = Sr2+, Ca2+, Ba2+) ceramics

2009 ◽  
Vol 24 (8) ◽  
pp. 2596-2604 ◽  
Author(s):  
Sašo Šturm ◽  
Makoto Shiojiri ◽  
Miran Čeh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dark Field ◽  
Atomic Scale ◽  
Transmission Electron ◽  
Initial Stage ◽  
Final Microstructure ◽  
Scanning Transmission ◽  
The Matrix ◽  
Annular Dark Field

The microstructure in AO-excess SrTiO3 (A = Sr2+, Ca2+, Ba2+) ceramics is strongly affected by the formation of Ruddlesden-Popper fault–rich (RP fault) lamellae, which are coherently intergrown with the matrix of the perovskite grains. We studied the structure and chemistry of RP faults by applying quantitative high-resolution transmission electron microscopy and high-angle annular dark-field scanning transmission electron microscopy analyses. We showed that the Sr2+ and Ca2+ dopant ions form RP faults during the initial stage of sintering. The final microstructure showed preferentially grown RP fault lamellae embedded in the central part of the anisotropic perovskite grains. In contrast, the dopant Ba2+ ions preferably substituted for Sr2+ in the SrTiO3 matrix by forming a BaxSr1−xTiO3 solid solution. The surplus of Sr2+ ions was compensated structurally in the later stages of sintering by the formation of SrO-rich RP faults. The resulting microstructure showed RP fault lamellae located at the surface of equiaxed BaxSr1-xTiO3 perovskite grains.

scholarly journals Thermal Annealing of High Dose P Implantation in 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 399-402 ◽  
Author(s):  
Cristiano Calabretta ◽  
Massimo Zimbone ◽  
Eric G. Barbagiovanni ◽  
Simona Boninelli ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Epitaxial Layer ◽  
Point Defects ◽  
High Dose ◽  
Double Step ◽  
Post Annealing ◽  
Transmission Electron

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

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