Transmission electron microscopy and Auger electron spectroscopy of silicon‐on‐insulator structures prepared by high‐dose implantation of nitrogen

1985 ◽  
Vol 58 (12) ◽  
pp. 4605-4613 ◽  
Author(s):  
J. Petruzzello ◽  
T. F. McGee ◽  
M. H. Frommer ◽  
V. Rumennik ◽  
P. A. Walters ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Silicon On Insulator ◽  
High Dose ◽  
Transmission Electron ◽  
High Dose Implantation

Auger Electron Spectroscopy and Its Application to Nanotechnology

2011 ◽  
Vol 19 (2) ◽  
pp. 12-15 ◽  
Author(s):  
S. N. Raman ◽  
D. F. Paul ◽  
J. S. Hammond ◽  
K. D. Bomben
Keyword(s):  
Electron Microscopy ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Imaging Techniques ◽  
Chemical Characterization ◽  
Depth Resolution ◽  
Surface Modifications ◽  
Transmission Electron ◽  
Nanoscale Characterization

Over the past decade, the field of nanotechnology has expanded, and the most heavily used nanoscale characterization/imaging techniques have been scanning probe microscopy (SPM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Although these high-resolution imaging techniques help visualize nanostructures, it is essential to understand the chemical nature of these materials and their growth mechanisms. Surface modifications in the first few nanometers can alter the bulk properties of these nanostructures, and conventional characterization techniques, including energy dispersive spectroscopy (EDS) and electron energy loss spectroscopy (EELS) associated with SEM and TEM are not suited to detecting these surface modifications except in special, favorable specimens. A modern state-of-the-art scanning Auger electron spectroscopy (AES) instrument provides valuable elemental and chemical characterization of nanostructures with a lateral spatial resolution better than 10 nm and a depth resolution of a few nm. In this article we review the technique of scanning AES and highlight its unique analytical capabilities in the areas of nanotechnology, metallurgy, and semiconductors.

Mechanical properties and microstructures of metal/ceramic microlaminates: Part I. Nb/MoSi2 systems

1992 ◽  
Vol 7 (10) ◽  
pp. 2765-2773 ◽  
Author(s):  
T.C. Chou ◽  
T.G. Nieh ◽  
T.Y. Tsui ◽  
G.M. Pharr ◽  
W.C. Oliver
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Transmission Electron Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Elastic Moduli ◽  
Chemical Interaction ◽  
Transmission Electron ◽  
Metal Ceramic ◽  
Equal Thickness

Artificial multilayers, or microlaminates, composed of alternating layers of Nb and MoSi2 of equal thickness were synthesized by d.c., magnetron sputtering. Four different modulation wavelengths, λ, were studied: 7, 11, 20, and 100 nm. The compositions, periodicities, and microstructures of the microlaminates were characterized by Auger electron spectroscopy and transmission electron microscopy. Structural characterization revealed that the as-deposited Nb layers are polycrystalline, while the MoSi2 layers are amorphous. The hardnesses and elastic moduli of the films were measured using nanoindentation techniques. Neither a supermodulus nor a superhardness effect could be identified in the range of wavelengths investigated; for each of the microlaminates, both the hardness and modulus were found to fall between the bounds set by the properties of the monolithic Nb and MoSi2 films. Nevertheless, a modest but a measurable increase in both hardness and modulus with decreasing wavelength was observed, thus indicating that behavior cannot be entirely described by a simple rule-of-mixtures. The hardness was found to vary linearly with Δ−1/2 in a manner similar to the Hall–Petch relationship. Annealing the microlaminates at 800 °C for 90 min produces significant increases in hardness and modulus due to chemical interaction of the layers.

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