The Effect of Deposition Method on Growth Morphology - Comparison of Molecular Beam Epitaxy, Ion Beam Assisted Deposition and Sputter Deposition

1998 ◽  
Vol 528 ◽  
Author(s):  
Th. Michely ◽  
M. Kalff ◽  
G. Comsa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Film Structure ◽  
Sputter Deposition ◽  
Formation Mechanisms ◽  
Island Formation ◽  
Ion Beam Assisted Deposition ◽  
Film Roughness

AbstractThin films created by the deposition or under influence of atoms with hyperthermal energies (E = 100 -104eV) exhibit properties which differ in many respects from those of films created by deposition of atoms with thermal energy. The morphologies of thin Pt-films deposited on Pt(111) under otherwise identical deposition conditions by molecular beam epitaxy (MBE), ion beam assisted deposition (IBAD) and sputter deposition (SD) differ in film structure size, island shapes and film roughness. The different film structure sizes are unambiguously traced back to two different island formation mechanisms inherent to these deposition methods. While in MBE the islands result from nucleation in a supersaturated adatom gas, in IBAD and SD they result by direct or indirect creation of adatom clusters as a consequence of single impacts of energetic atoms present in the depositing particle flux. The differences in film roughness are not only due to the different island formation mechanisms, but seem to be closely related to the different step edge structures at the growth front.

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Ion‐beam doping of GaAs with low‐energy (100 eV) C+using combined ion‐beam and molecular‐beam epitaxy

1995 ◽  
Vol 77 (1) ◽  
pp. 146-152 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Molecular beam epitaxy of GaAsxP1-xusing lowenergy P+ Ion Beam

1988 ◽  
Vol 17 (1) ◽  
pp. 21-24 ◽  
Author(s):  
S. Maruno ◽  
Y. Morishita ◽  
T. Isu ◽  
Y. Nomura ◽  
H. Ogata
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam

Low temperature photoluminescence from GaAs impinged by mass-separated low-energy C+ ion beams during molecular beam epitaxy

1993 ◽  
Vol 316 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Stefan Winter ◽  
Shinji Kimura ◽  
Yushin Tsai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Ion Beam ◽  
Ion Beams ◽  
Beam Current Density ◽  
Molecular Beam Epitaxy Growth ◽  
Spectral Evolution ◽  
Activation Rate

ABSTRACTC-doped GaAs films were prepared by novely a developed, combined ion beam and molecular beam method (CIBMBE) as a function of hyperthermal (30–500 eV) energies (EC+) of carbon ion (C+) beam. Ion beams of a fixed beam current density were impinged during molecular beam epitaxy growth of GaAs at substrate temperature of 550 °C. Low temperature (2 K) photoluminescence (PL) has been used to characterize the samples together with Hall effects measurements at room temperature. Through the spectral evolution of an emission denoted by [g-g]β which is a specific emission relevant to acceptor-acceptor pairs, the activation rate was confirmed to increase with increasing EC+ for EC+ lower than 170 eV. It was explicitly demonstrated that the most effective Ec+ to establish highest activation rate is located at ~170 eV. This growing activation rate was suggested to be attributed to the enhanced migration of both impinged C and host constituent atoms with increasing EC+. This surmise was supported also by Hall effect measurements which revealed the maximum net hole concentration ( |NA-ND| ) for EC+=170 eV. For EC+ higher than ~170 eV, increasing EC+ was found to induce the reduction of activation rate. It was suggested that this observation is ascribed not to the formation of C donors but to the enhanced sputtering effect of impinged C+ ions with increasing EC+.

Metalorganic Molecular Beam Epitaxy of Magnesium Oxide on Silicon

2000 ◽  
Vol 619 ◽  
Author(s):  
F. Niu ◽  
B.H. Hoerman ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Amorphous Layer ◽  
Film Structure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Epitaxial Relationship ◽  
Transmission Electron ◽  
Metalorganic Molecular Beam Epitaxy

ABSTRACTEpitaxial cubic MgO thin films were deposited on single crystal Si (001) substrates by metalorganic molecular beam epitaxy (MOMBE) using the solid precursor magnesium acetylacetonate as the source and an RF excited oxygen plasma as the oxidant. The growth process involved initial formation of an epitaxial β-SiC interlayer followed by direct deposition of a MgO overlayer. The film structure was characterized by X-ray diffraction as well as conventional and high-resolution transmission electron microscopy. Both the MgO overlayer and β-SiC interlayer had an epitaxial relationship such that MgO (001) (or SiC (001)) // Si (001) and MgO [110] (or SiC [110])// Si [110]. No evidence of an amorphous layer was observed at either the MgO/SiC or SiC/Si interface. Dielectric properties of the epitaxial MgO thin films on Si (001) were evaluated from capacitance-voltage (C-V) characteristic of metal-oxide-semiconductor (MOS) structures. The C-V measurements indicated an interface trap density at midgap as low as 1011 to 1012 cm−2 eV−1 and fixed oxide charge of the order of 1011/ cm2, respectively. These results indicate that epitaxial MgO deposited by MOMBE has potential as a gate insulator.

Optical Characterization of 100 eV C+ Ion Doped GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Ion Beam ◽  
Optical Characterization ◽  
Mbe Growth ◽  
Impurity Doping ◽  
Specific Emissions ◽  
Hall Effect Measurements

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces

2008 ◽  
Vol 310 (7-9) ◽  
pp. 1619-1626 ◽  
Author(s):  
Kannan Krishnaswami ◽  
Shivashankar R. Vangala ◽  
Helen M. Dauplaise ◽  
Lisa P. Allen ◽  
Gordon Dallas ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Surfaces And Interfaces ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam
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