Molecular beam epitaxy of GaAsxP1-xusing lowenergy P+ Ion Beam

1988 ◽  
Vol 17 (1) ◽  
pp. 21-24 ◽  
Author(s):  
S. Maruno ◽  
Y. Morishita ◽  
T. Isu ◽  
Y. Nomura ◽  
H. Ogata
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Ion‐beam doping of GaAs with low‐energy (100 eV) C+using combined ion‐beam and molecular‐beam epitaxy

1995 ◽  
Vol 77 (1) ◽  
pp. 146-152 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Low temperature photoluminescence from GaAs impinged by mass-separated low-energy C+ ion beams during molecular beam epitaxy

1993 ◽  
Vol 316 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Stefan Winter ◽  
Shinji Kimura ◽  
Yushin Tsai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Ion Beam ◽  
Ion Beams ◽  
Beam Current Density ◽  
Molecular Beam Epitaxy Growth ◽  
Spectral Evolution ◽  
Activation Rate

ABSTRACTC-doped GaAs films were prepared by novely a developed, combined ion beam and molecular beam method (CIBMBE) as a function of hyperthermal (30–500 eV) energies (EC+) of carbon ion (C+) beam. Ion beams of a fixed beam current density were impinged during molecular beam epitaxy growth of GaAs at substrate temperature of 550 °C. Low temperature (2 K) photoluminescence (PL) has been used to characterize the samples together with Hall effects measurements at room temperature. Through the spectral evolution of an emission denoted by [g-g]β which is a specific emission relevant to acceptor-acceptor pairs, the activation rate was confirmed to increase with increasing EC+ for EC+ lower than 170 eV. It was explicitly demonstrated that the most effective Ec+ to establish highest activation rate is located at ~170 eV. This growing activation rate was suggested to be attributed to the enhanced migration of both impinged C and host constituent atoms with increasing EC+. This surmise was supported also by Hall effect measurements which revealed the maximum net hole concentration ( |NA-ND| ) for EC+=170 eV. For EC+ higher than ~170 eV, increasing EC+ was found to induce the reduction of activation rate. It was suggested that this observation is ascribed not to the formation of C donors but to the enhanced sputtering effect of impinged C+ ions with increasing EC+.

Optical Characterization of 100 eV C+ Ion Doped GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Ion Beam ◽  
Optical Characterization ◽  
Mbe Growth ◽  
Impurity Doping ◽  
Specific Emissions ◽  
Hall Effect Measurements

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces

2008 ◽  
Vol 310 (7-9) ◽  
pp. 1619-1626 ◽  
Author(s):  
Kannan Krishnaswami ◽  
Shivashankar R. Vangala ◽  
Helen M. Dauplaise ◽  
Lisa P. Allen ◽  
Gordon Dallas ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Surfaces And Interfaces ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

Comparison of ion-beam-assisted molecular beam epitaxy with conventional molecular beam epitaxy of thin hexagonal gallium nitride films

2004 ◽  
Vol 264 (1-3) ◽  
pp. 184-191 ◽  
Author(s):  
S Sienz ◽  
J.W Gerlach ◽  
T Höche ◽  
A Sidorenko ◽  
T.G Mayerhöfer ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam
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