Ion‐beam doping of GaAs with low‐energy (100 eV) C+using combined ion‐beam and molecular‐beam epitaxy

1995 ◽  
Vol 77 (1) ◽  
pp. 146-152 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

Molecular Beam Epitaxy of InP Using Low Energy P+Ion Beam

1985 ◽  
Vol 24 (Part 2, No. 2) ◽  
pp. L115-L118 ◽  
Author(s):  
Saburo Shimizu ◽  
Osamu Tsukakoshi ◽  
Souji Komiya ◽  
Yonosuke Makita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy

In-situ Subplantation of Low-Energy (~100 eV) C+ into GaAs using Combined Ion Beam and Molecular Beam Epitaxy

1994 ◽  
pp. 169-172
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy

Surface reconstruction induced by a pulsed low-energy ion beam during Si(111) molecular beam epitaxy

1999 ◽  
Vol 425 (2-3) ◽  
pp. 185-194 ◽  
Author(s):  
A.V. Dvurechenskii ◽  
V.A. Zinovyev ◽  
V.A. Markov ◽  
V.A. Kudryavtsev
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy
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