Characterisation of Low Energy Boron Implantation and Fast Ramp-Up Rapid Thermal Annealing

1998 ◽  
Vol 525 ◽  
Author(s):  
E. J. H. Collart ◽  
G. de Cock ◽  
A. J. Murrell ◽  
M. A. Foad
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Low Energy ◽  
Electrical Activation ◽  
Junction Depth ◽  
Boron Implantation

ABSTRACTThe effects of ramp-up rate during rapid thermal processing of ultra-shallow boron implants have been investigated. Ramp-up rates were varied between 25 °C and 200 °C for two types of anneals: soak anneals and spike anneals. It was found that the ramp-up rate had very little influence on junction depth or electrical activation for both types of anneals. Spike anneals did produce shallower profiles than soak anneal for a comparable electrical activation and may be an option for future processes.

Rapid Thermal Annealing and Oxidation of Silicon Wafers with Back-Side Films

1997 ◽  
Vol 470 ◽  
Author(s):  
A. T. Fiory
Keyword(s):  
Thermal Oxidation ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Control ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Thickness ◽  
Back Side ◽  
Control Accuracy

ABSTRACTTemperatures for lamp-heated rapid thermal processing of wafers with various back-side films were controlled by a Lucent Technologies pyrometer which uses a/c lamp ripple to compensate for emissivity. Process temperatures for anneals of arsenic and boron implants were inferred from post-anneal sheet resistance, and for rapid thermal oxidation, from oxide thickness. Results imply temperature control accuracy of 12°C to 17°C at 3 standard deviations.

Characteristics of Arsenic Doped Polycrystalline Silicon-Gate Capacitors After Rapid Thermal Processing

1987 ◽  
Vol 106 ◽  
Author(s):  
R. Angelucci ◽  
C. Y. Wong ◽  
J. Y.-C. Sun ◽  
G. Scilla ◽  
P. A. McFarland ◽  
...  
Keyword(s):  
Work Function ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Interface States ◽  
Fixed Charges ◽  
Polysilicon Gate

ABSTRACTThe feasibility and advantages of using rapid thermal annealing to achieve a proper n+ polysilicon work function are demonstrated. Our data shows that RTA can be used to activate arsenic in the polysilicon gate after a regular furnace anneal or to diffuse and activate arsenic without any prior furnace anneal. Interface states and fixed charges due to RTA can be annealed out at 500°C for 30 min in forming gas. New insights into the diffusion, segregation, and activation of As in polysilicon during furnace and/or rapid thermal annealing have been obtained.

Characterization of Doped Si-TiSi2 Bilayers Formed by Ion Beam Mixing and Rapid Thermal Annealing

1985 ◽  
Vol 45 ◽  
Author(s):  
K. Maex ◽  
R.F. de Keersmaecker ◽  
P.F.A. Alkemade
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Processing ◽  
Ion Beam ◽  
Rapid Thermal Processing ◽  
Ion Beam Mixing ◽  
Simultaneous Formation ◽  
Impurity Redistribution

ABSTRACTThe use of rapid thermal processing is reported for simultaneous formation of TiSi2 from Ti deposited layers and activation of As or Sb implanted profiles in Si. Properties of the silicide and the doped Si are reported with emphasis on impurity redistribution and defect removal.

Rapid Thermal Processing of Thin Film Electroluminescent Display Materials

1988 ◽  
Vol 100 ◽  
Author(s):  
D. M. Kim ◽  
F. Qian ◽  
R. Solanki ◽  
R. T. Tuenge ◽  
C. N. King
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Processing ◽  
Annealing Temperature ◽  
Rapid Thermal Processing ◽  
Processing Conditions ◽  
Furnace Annealing ◽  
Fatigue Effect

ABSTRACTRapid thermal annealing of the electroluminescent phosphors ZnS:Mn, SrS:CeF3 and ZnS:SmCl3 has been examined as a function of annealing temperature (500–750°C) and time of exposure (10–120 sec.). The resulting brightness and efficiency of luminescence are correlated with the different processing conditions used. The results indicate that the brightness can be significantly improved from the value obtained with furnace annealing without causing film delamination, blistering or fatigue effect.

Rapid Thermal Annealing of Ni/Al/Si and Ni/Si Systems

1986 ◽  
Vol 74 ◽  
Author(s):  
A. Katz ◽  
Y. KOMEM
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Processing ◽  
Reference System ◽  
Diffusion Processes ◽  
Eutectic Temperature ◽  
Melting Process ◽  
Polycrystalline Layer ◽  
Smooth Interface ◽  
And Diffusion

AbstractThe effect of Rapid Thermal Annealing on phase formation and diffusion processes in the Ni(30 nm) /Al(10 nm)/Si system was studied and coxpared to a Ni(30 nm)/Si reference system. Heat treatments were carried out at temperatures between 400°C and 900°C for 2 seconds.The results obtained by means of TEM, AES and XRD indicated that the Ni/Al/Si system underwent a local melting in the intermediate Al layer at the Al/Si eutectic temperature (577°C). This reaction, due to the rapid melting process, resulted in formation of a unique layered-structure composed of a columnar polycrystalline layer (60 nm thick) of Ni2Si and NiSi adjacent to the Si substrate with relatively smooth interface and an outer layer of two separate polycrystalline films (both about 10 m thick) of Al3Ni (inside) and Ni(Al0.5Si0.5 ) (outside). Under the same rapid thermal processing conditions the Ni/Si reference system underwent a solid state reaction which resulted in the formation of a polycrystalline layer (60 nm thick) composed of Ni2Si and NiSi as well as NiSi2.

Low energy boron implantation profiles in silicon from junction depth measurements

1971 ◽  
Vol 7 (1-2) ◽  
pp. 7-15 ◽  
Author(s):  
P. Sebillotte ◽  
M. Badanoiu ◽  
V. B. Ndocko ◽  
P. Siffert
Keyword(s):  
Low Energy ◽  
Junction Depth ◽  
Boron Implantation

Characterization of PSG Films Reflowed in Steam Using Rapid Thermal Processing

1985 ◽  
Vol 52 ◽  
Author(s):  
N. Shah ◽  
J. M. C. Vittie ◽  
N. Sharif ◽  
J. Nulman ◽  
A. Gat
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Operating Regime ◽  
Junction Depth ◽  
Thermal Oxide ◽  
Rapid Thermal Annealer ◽  
Flow Cycle ◽  
Phosphosilicate Glass

ABSTRACTThis study describes the use of a steam environment to reflow phosphosilicate glass (PSG) samples using a HEATPULSE® rapid thermal annealer. The samples comprised PSG over poly steps and of open contacts in PSG. It was observed that reflow occurs 50°C lower in steam than in dry O2. An acceptable flow cycle for 8 w/o P in PSG glass is 1050°C for 10 seconds in steam, while for 6 w/o P PSG it is 1100°C for 10 seconds. Steam is found to be an effective amibient for densification of the PSG film. The thermal oxide grown in the contact during opening reflow was determined to be near 140 A. The operating regime for a junction depth <0.4 um and a reflow angle < 75° is presented for 8 w/o P.

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