Characterization of Doped Si-TiSi2 Bilayers Formed by Ion Beam Mixing and Rapid Thermal Annealing

1985 ◽  
Vol 45 ◽  
Author(s):  
K. Maex ◽  
R.F. de Keersmaecker ◽  
P.F.A. Alkemade
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Processing ◽  
Ion Beam ◽  
Rapid Thermal Processing ◽  
Ion Beam Mixing ◽  
Simultaneous Formation ◽  
Impurity Redistribution

ABSTRACTThe use of rapid thermal processing is reported for simultaneous formation of TiSi2 from Ti deposited layers and activation of As or Sb implanted profiles in Si. Properties of the silicide and the doped Si are reported with emphasis on impurity redistribution and defect removal.

Rapid Thermal Annealing and Oxidation of Silicon Wafers with Back-Side Films

1997 ◽  
Vol 470 ◽  
Author(s):  
A. T. Fiory
Keyword(s):  
Thermal Oxidation ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Control ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Thickness ◽  
Back Side ◽  
Control Accuracy

ABSTRACTTemperatures for lamp-heated rapid thermal processing of wafers with various back-side films were controlled by a Lucent Technologies pyrometer which uses a/c lamp ripple to compensate for emissivity. Process temperatures for anneals of arsenic and boron implants were inferred from post-anneal sheet resistance, and for rapid thermal oxidation, from oxide thickness. Results imply temperature control accuracy of 12°C to 17°C at 3 standard deviations.

Influence of Low-Dose Ion-Beam Mixing on CoSi2 Formation

1992 ◽  
Vol 268 ◽  
Author(s):  
Ikasko C. Dehm ◽  
H. Ryssel
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Dose ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Annealing Temperatures ◽  
Critical Dose ◽  
Incomplete Reaction ◽  
Abrupt Interface ◽  
Complete Formation

ABSTRACTIn this study, the critical dose for ion-beam mixing of Co and Si with Ge-ions which results in homogenous CoSi2 formation after rapid thermal annealing was found. For this purpose, Co was deposited by sputtering on chemically cleaned, <100>-oriented Si and subsequently mixed with Ge ions at doses in the range of 2. 1014 to 1. 1015 cm−2. Silicidation was performed in a rapid thermal annealing (RTA) system at temperatures between 700° and 100°C. Rutherford backscattering measurements showed that annealing at 700°C results in an incomplete reaction when ion-beam mixing at a dose of 2.1014 cm−2 or no ion-beam mixing was performed. After annealing at 1000°C, TEM samples revealed an inhomogeneous CoSi2 film consisting of large grains embedded in the Si. Mixing at doses at or above 5.1014 cm−2 and subsequent RTA at 700°C resulted in uniform CoSi2 layers. Higher annealing temperatures cause larger grains and resistivity values as low as 18 μΩcm. Therefore, we demonstrated that the critical dose leading to complete formation of smooth CoSi2 films with abrupt interface is 5.1014 cm−2 which is nearly the same value as the amorphization dose of Ge in Si.

Formation of Titanium Silicide by Multiple Arsenic Implantations and Ion Beam Mixing

1991 ◽  
Vol 224 ◽  
Author(s):  
Po-Ching Chen ◽  
Jian-Yang Lin ◽  
Huey-Liang Hwang
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Titanium Silicide ◽  
Mixing Conditions ◽  
Cross Sectional ◽  
Ion Beam Mixing ◽  
Post Annealing

AbstractTitanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapid thermal annealing. Three different arsenic-ion mixing conditions were examined in this work. The sheet resistance, residue As concentration post annealing and TiSi2 phase were characterized by using the* four-point probe, RBS and electron diffraction, respectively. TiSi2 of C54 phase was identified in the doubly implanted samples. The thickness of the Ti silicide and the TiSi2/Si interface were observed by the cross-sectional TEM.

Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing

1988 ◽  
Vol 52 (11) ◽  
pp. 877-879 ◽  
Author(s):  
Y. H. Ku ◽  
S. K. Lee ◽  
D. K. Shih ◽  
D. L. Kwong ◽  
C‐O Lee ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Silicide Growth

Formation of Cosi2-Shallow Junctions By Ion Beam Mixing and Rapid Thermal Annealing

1990 ◽  
Vol 181 ◽  
Author(s):  
L. Niewöhner ◽  
D. Depta
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Dopant Distribution ◽  
Junction Depth ◽  
Ion Beam Mixing ◽  
Sem And Tem ◽  
Shallow Junctions

ABSTRACTFormation of CoSi2 using the technique of ion implantation through metal (ITM) and subsequent appropriate rapid thermal annealing is described. Silicide morphology is investigated by SEM and TEM. SIMS and RBS are used to determine dopant distribution and junction depth. Self-aligned CoSi2/n+p diodes produced in this technique are presented.

Selective tungsten silicide formation by ion‐beam mixing and rapid thermal annealing

1985 ◽  
Vol 57 (6) ◽  
pp. 1890-1894 ◽  
Author(s):  
B‐Y. Tsaur ◽  
C. K. Chen ◽  
C. H. Anderson ◽  
D. L. Kwong
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Silicide Formation ◽  
Ion Beam Mixing ◽  
Tungsten Silicide
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