An Overview and Comparison of Rapid Thermal Processing Equipment: a Users Viewpoint

1985 ◽  
Vol 52 ◽  
Author(s):  
S. R. Wilson ◽  
R. B. Gregory ◽  
W. M. Paulson
Keyword(s):  
Thermal Processing ◽  
Room Temperature ◽  
Rapid Thermal Processing ◽  
High Volume ◽  
Temperature Measurements ◽  
Processing Equipment ◽  
Radiation Sources ◽  
Serial Processor ◽  
Semiconductor Fabrication ◽  
And Control

ABSTRACTFive different RTP units have been examined. These are the Varian RTP-800, the Eaton ROA-400, the A.G. Associates 2101/2106, the Tamarack 180A-C and the Varian IA-200. Each system is a cassette-to-cassette serial processor designed for use in a high volume semiconductor fabrication line. These units will heat a wafer from room temperature to 400–1400C in times on the order of a few seconds. Each unit uses radiation to heat and cool the wafer. The different radiation sources, wafer handling systems, temperature measurements and control computers are discussed. The control of slip and nonuniform temperatures is presented as well as information regarding the types of ambients that can be used in each system.

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control

Gas flow patterns and thermal uniformity in rapid thermal processing equipment

2002 ◽  
Author(s):  
S.A. Campbell ◽  
K.L. Knutson ◽  
K.H. Ahn ◽  
J.D. Leighton ◽  
B. Liu
Keyword(s):  
Thermal Processing ◽  
Gas Flow ◽  
Rapid Thermal Processing ◽  
Flow Patterns ◽  
Processing Equipment

Modeling and control of rapid thermal processing

1992 ◽  
Author(s):  
Charles D. Schaper ◽  
Young M. Cho ◽  
Poogyeon Park ◽  
Stephen A. Norman ◽  
Paul Gyugyi ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Modeling And Control ◽  
And Control

Applications of In Situ Ellipsometry in RTP Temperature Measurement and Process Control

1991 ◽  
Vol 224 ◽  
Author(s):  
Hisham Z. Massoud ◽  
Ronald K. Sampson ◽  
Kevin A. Conrad ◽  
Yao-Zhi Hu ◽  
Eugene A. Irene
Keyword(s):  
Temperature Dependence ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Index Of Refraction ◽  
Strong Temperature Dependence ◽  
Heating And Cooling ◽  
Wafer Processing ◽  
And Control ◽  
Measurement And Control

AbstractThe applications of in situ automated ellipsometry in the measurement and control of temperature in rapid-thermal processing (RTP) equipment are investigated. This technique relies on the accurate measurement of the index of refraction of a wafer using ellipsometry and the strong temperature dependence of the index of refraction to determine the wafer temperature. In principle, this technique is not limited to silicon wafer processing and could be applied to any surface whose index of refraction has a strong and well known temperature dependence. This technique is non-invasive, non-contact, fast, accurate, compatible with ultraclean processing, and lends itself to monitoring the dynamic heating and cooling cycles encountered in rapid-thermal processing.

Characterization of Process Uniformity and Control of Titanium Silicide Formed by Rapid Thermal Processing (RTP)

1987 ◽  
Vol 92 ◽  
Author(s):  
David Hodul David Hodul ◽  
Sandeep Mehta Sandeep Mehta
Keyword(s):  
Thermal Processing ◽  
Low Temperatures ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
Film Properties ◽  
Rapid Annealing ◽  
Oxygen Contamination ◽  
Process Uniformity ◽  
And Control

ABSTRACTSputtered titanium films with thicknesses in the range of 300 to 1200Å were processed in a commercial rapid annealing system to form TiSi2 films. The films were first reacted at low temperatures (500-700°C), etched in ammonia/peroxide solution, and then reacted at 850-900°C to simulate a typical self-alignedsilicide (salicide) process. A method to correctfor dynamic temperature nonuniformities and the resulting etch nonuniformities will be discussed. Sheet resistance maps of the resulting films will be presented. In addition, film properties were measured as a function of annealing ambient in particular, the effects of oxygen contamination were studied.

Heavy Phosphorus Implantation of Ge0.83Si0.17 Epitaxial Layers

1985 ◽  
Vol 45 ◽  
Author(s):  
J.C. Bean ◽  
A.T. Fiory ◽  
L.C. Hopkins
Keyword(s):  
Thermal Processing ◽  
Electrical Transport ◽  
Room Temperature ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Rapid Thermal Processing ◽  
Electrical Activation ◽  
Temperature Dependent ◽  
Secondary Ion

ABSTRACTEpitaxial Ge-Si alloy films were grown on Si(100) by molecular beam epitaxy, subsequently given a shallow P implant, and subjected to rapid thermal processing. Heat treatment causes solid-phase epitaxial regrowth of the amorphized implanted layer similar to the case of pure Ge. Phosphorus redistribution, loss, and trapping at the Ge-Si/Si interface are also observed. Anomalous electrical activation is observed for P concentrations below 1 at.%, where the-carriers are either trapped or compensated at room temperature, but not below 100K. Analyses were carried out by Rutherford backscattering and channeling, secondary ion mass spectrometry, and temperature-dependent electrical transport.

Performance of Mesoporous Organo Silica Membrane for Desalination

2020 ◽  
Vol 1000 ◽  
pp. 285-292
Author(s):  
Aptar E. Lestari ◽  
Muthia Elma ◽  
Sadidan Rabiah ◽  
Erdina Lulu Atika Rampun ◽  
Aulia Rahma ◽  
...  
Keyword(s):  
Citric Acid ◽  
Thermal Processing ◽  
Room Temperature ◽  
Rapid Thermal Processing ◽  
Vapour Phase ◽  
Tetraethyl Orthosilicate ◽  
Cold Trap ◽  
Feed Concentration ◽  
Silica Network ◽  
Silica Membrane

Clean water is essential source for household purpose. However, many surface water contain high salt concentration was found. In this work, membrane was made using tetraethyl orthosilicate (TEOS) as silica precursors and citric acid as single organo catalyst. Membranes were calcined at 200 and 250 °C using Rapid thermal processing (RTP). All membranes were tested via pervaporation. Pervaporation processes allow membrane to separate salt from water as vapour phase with vacuum condition required. Permeate was collected in the cold trap after condenses. This study focus to the performance of organo silica membrane in variance of refluxed 0 and 50 °C and feed concentrations (0.3, 3.5 and 5wt% NaCl) at room temperature (~25 °C). Optimum condition was obtained at reflux 50 °C with high siloxane and Si-C bonds. Carbon content from citric acid promote silica network more strength. The good performances in variance feed concentration were also showed at reflux 50°C with 0.3324 kg.m-2.h-1 (0.3 wt%), 0,2290 kg.m-2.h-1 (3.5 wt%) and 0.2168 kg.m-2.h-1 (5 wt%). These membranes are categorized as mesoporous and achieve excellent salt rejection >95%.

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