Thermal modeling and control of rapid thermal processing systems

2002 ◽  
Author(s):  
J.L. Ebert ◽  
A. Emami-Naeini ◽  
H. Aling ◽  
R.L. Kosut
Keyword(s):  
Thermal Processing ◽  
Thermal Modeling ◽  
Rapid Thermal Processing ◽  
Modeling And Control ◽  
And Control

Modeling and control of rapid thermal processing

1992 ◽  
Author(s):  
Charles D. Schaper ◽  
Young M. Cho ◽  
Poogyeon Park ◽  
Stephen A. Norman ◽  
Paul Gyugyi ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Modeling And Control ◽  
And Control

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control

Temperature Field Regulation in Thermal Cutting for Layered Manufacturing

1999 ◽  
Vol 121 (3) ◽  
pp. 440-447 ◽  
Author(s):  
N. Fourligkas ◽  
C. Doumanidis
Keyword(s):  
Temperature Field ◽  
Thermal Processing ◽  
Pole Placement ◽  
Time Variability ◽  
Material Structure ◽  
Source Power ◽  
Modeling And Control ◽  
Thermal Sensing ◽  
Process Disturbances ◽  
And Control

A general thermal modeling and control methodology for thermal processing of layered materials for rapid prototyping technologies is established in this article. An analytical multivariable model of lumped temperature outputs generated by heat inputs on a surface grid is developed, based on Green’s function and state-space descriptions. The few independent parameters needed in such a linearized formulation are experimentally identified, and their time-variability reflects the heat transfer nonlinearities and process disturbances. A robust controller with thermal feedback is designed by pole placement methods, to obtain a specified dynamic temperature field yielding the desired material structure and properties. The regulated thermal processing is optimized in real time by proper heat source power modulation and torch guidance through a simulated annealing strategy. Its performance is tested on both the computer model and a laboratory station, using robotically guided plasma-arc cutting and infrared thermal sensing, in regulating the sensitized zone during blanking of an elementary contour pattern on stainless steel.

Applications of In Situ Ellipsometry in RTP Temperature Measurement and Process Control

1991 ◽  
Vol 224 ◽  
Author(s):  
Hisham Z. Massoud ◽  
Ronald K. Sampson ◽  
Kevin A. Conrad ◽  
Yao-Zhi Hu ◽  
Eugene A. Irene
Keyword(s):  
Temperature Dependence ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Index Of Refraction ◽  
Strong Temperature Dependence ◽  
Heating And Cooling ◽  
Wafer Processing ◽  
And Control ◽  
Measurement And Control

AbstractThe applications of in situ automated ellipsometry in the measurement and control of temperature in rapid-thermal processing (RTP) equipment are investigated. This technique relies on the accurate measurement of the index of refraction of a wafer using ellipsometry and the strong temperature dependence of the index of refraction to determine the wafer temperature. In principle, this technique is not limited to silicon wafer processing and could be applied to any surface whose index of refraction has a strong and well known temperature dependence. This technique is non-invasive, non-contact, fast, accurate, compatible with ultraclean processing, and lends itself to monitoring the dynamic heating and cooling cycles encountered in rapid-thermal processing.

Characterization of Process Uniformity and Control of Titanium Silicide Formed by Rapid Thermal Processing (RTP)

1987 ◽  
Vol 92 ◽  
Author(s):  
David Hodul David Hodul ◽  
Sandeep Mehta Sandeep Mehta
Keyword(s):  
Thermal Processing ◽  
Low Temperatures ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
Film Properties ◽  
Rapid Annealing ◽  
Oxygen Contamination ◽  
Process Uniformity ◽  
And Control

ABSTRACTSputtered titanium films with thicknesses in the range of 300 to 1200Å were processed in a commercial rapid annealing system to form TiSi2 films. The films were first reacted at low temperatures (500-700°C), etched in ammonia/peroxide solution, and then reacted at 850-900°C to simulate a typical self-alignedsilicide (salicide) process. A method to correctfor dynamic temperature nonuniformities and the resulting etch nonuniformities will be discussed. Sheet resistance maps of the resulting films will be presented. In addition, film properties were measured as a function of annealing ambient in particular, the effects of oxygen contamination were studied.

An Overview and Comparison of Rapid Thermal Processing Equipment: a Users Viewpoint

1985 ◽  
Vol 52 ◽  
Author(s):  
S. R. Wilson ◽  
R. B. Gregory ◽  
W. M. Paulson
Keyword(s):  
Thermal Processing ◽  
Room Temperature ◽  
Rapid Thermal Processing ◽  
High Volume ◽  
Temperature Measurements ◽  
Processing Equipment ◽  
Radiation Sources ◽  
Serial Processor ◽  
Semiconductor Fabrication ◽  
And Control

ABSTRACTFive different RTP units have been examined. These are the Varian RTP-800, the Eaton ROA-400, the A.G. Associates 2101/2106, the Tamarack 180A-C and the Varian IA-200. Each system is a cassette-to-cassette serial processor designed for use in a high volume semiconductor fabrication line. These units will heat a wafer from room temperature to 400–1400C in times on the order of a few seconds. Each unit uses radiation to heat and cool the wafer. The different radiation sources, wafer handling systems, temperature measurements and control computers are discussed. The control of slip and nonuniform temperatures is presented as well as information regarding the types of ambients that can be used in each system.

Rapid Thermal Processing: How Well is it Doing and Where is it Going?

1987 ◽  
Vol 92 ◽  
Author(s):  
T.O. Sedgwick
Keyword(s):  
Thermal Processing ◽  
Film Growth ◽  
Rapid Thermal Processing ◽  
Semiconductor Technology ◽  
Productivity Cost ◽  
Wafer Processing ◽  
And Control ◽  
Measurement And Control ◽  
Reactive Mode ◽  
Made In

ABSTRACTThe use of Rapid Thermal Processing (RTP) as a processing tool in semiconductor technology is still increasing and and becoming more diverse. The use of RTP in a reactive mode for film growth and deposition is an important new direction. The strong interest in III-V compound annealing studies represents one of the most important application areas. Although RTP is predominantly exploratory and developmental in nature it is slowly being introduced into the manufacture of Si devices. The technological necessity for the greater use of RTP in routine production will depend on either demonstrated productivity/cost advantages or on some intrinsic advantage of RTP. The intrinsic advantages of RTP are due to the single wafer processing nature of the operation or due to the possibility of selectively enhancing one desired process over another undesired reaction in a partically fabricated structure. Although significant impovements in commercially available reactors have been made in the last several years, better temperature measurement and control and particularly temperature uniformity of the wafer are still sorely needed.

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