Rapid Thermal Annealing of B or N Implanted Monocrystalline 1-SiC Thin Films and its Effect on Electrical Properties and Device Performance

1985 ◽  
Vol 52 ◽  
Author(s):  
Jae Ryu ◽  
H. J. Kim ◽  
R. F. Davis
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Amorphous Layer ◽  
High Resistivity ◽  
Electrical Measurements ◽  
Cross Sectional ◽  
Annealing Temperatures ◽  
Type Layer ◽  
P Type

ABSTRACTThe annealing behavior of B or N dual implants in 1-SiC thin films has been studied using cross-sectional transmission electron microscopy (XTEM), secondary ion mass spectroscopy (SIMS), and four point probe electrical measurements. A high resistivity layer was produced after annealing the B implanted-amorphous layer in the temperature range from 1000°C to 1500°C for 300 a; however, the resistivity rapidly decreased as a result of annealing at higher temperatures. The reasons for these changes in resistivity and the lack of p-type conduction at all annealing temperatures in these B implants include: (1) possible compensation of the native n-type carriers, (2) reduction in the B concentration via formation of B-containing precipitates between 1300°C and 1600°C and out diffusion of this species at and above 1600°C, and (3) creation of additional n-type carriers.No precipitates or defect structure was observed in N implanted-annealed samples. The resistivity of this non amorphous n-type layer decreased with increasing annealing temperatures from 700°C to 1800°C. Furthermore n-p junction diodes were fabricated for the first time in β-SiC via N implantation into samples previously in situ doped with 8 × 1018/cm3 Al coupled with rapid thermal annealing at 1200°C for 300 a. A typical diode ideality constant and a saturation current for these diodes was 3.4 and 9 × 10-10 A/cm2, respectively.

Observation of the Wurtzite Phase in OMVPE Grown ZnSe/GaAs: Effect on Implantation and Rapid Thermal Annealing

1989 ◽  
Vol 147 ◽  
Author(s):  
K. S. Jones ◽  
J. Yu ◽  
P. D. Lowen ◽  
D. Kisker
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Transport ◽  
High Resistivity ◽  
Ion Milling ◽  
Electrical Transport Properties ◽  
Wurtzite Phase ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractTransmission electron diffraction patterns of cross-sectional TEM samples of OMVPE ZnSe on GaAs indicate the existence of the hexagonal wurtzite phase in the epitaxial layers. The orientation relationship is (0002)//(111); (1120)//(220). Etching studies indicate the phase is internal not ion milling induced. The average wurtzite particle size is 80Å-120Å. Because of interplanar spacing matches it is easily overlooked. Electrical property measurements show a high resistivity (1010ω/square) which drops by four orders of magnitude upon rapid thermal annealing between 700°C and 900 °C for 3 sec. Implantation of Li and N have little effect on the electrical transport properties. The Li is shown to have a high diffusivity, a solid solubility of ≈1016/cm3 at 800°C and getters to the ZnSeA/aAs interface.

Rapid thermal annealing induced the c-axis (00 l) preferred orientation and the p-type thermoelectric properties of Bi-Sb-Te thin films

2020 ◽  
Vol 706 ◽  
pp. 138094 ◽  
Author(s):  
Athorn Vora–ud ◽  
Somporn Thaowonkaew ◽  
Jessada Khajonrit ◽  
Kunchit Singsoog ◽  
Pennapa Muthitamongkol ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Thermoelectric Properties ◽  
Rapid Thermal Annealing ◽  
Preferred Orientation ◽  
P Type

Reversible p -type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

2017 ◽  
Vol 400 ◽  
pp. 312-317 ◽  
Author(s):  
Ramanjaneyulu Mannam ◽  
E. Senthil Kumar ◽  
Nandita DasGupta ◽  
M.S. Ramachandra Rao
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Zno Thin Films ◽  
Type Conductivity ◽  
P Type

The Fabrication of Fe-Doped TiCoSb Thin Films by Magnetron Sputtering and Rapid Thermal Annealing

2013 ◽  
Vol 341-342 ◽  
pp. 129-133
Author(s):  
Juan Qin ◽  
Niu Yi Sun ◽  
Guo Hua Wang ◽  
Min Zhang ◽  
Wei Min Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Seebeck Coefficient ◽  
Diffraction Patterns ◽  
P Type ◽  
Narrow Band Gap Semiconductors

TiCoSb-based half-Heusler compounds, which are narrow band gap semiconductors with a high Seebeck coefficient, have been intensively studied in bulk form but rarely in thin films. In this article TiFexCo1-xSb (x=0, 0.17) thin films were synthesized on n-type single crystal Si (100) and MgO (100) substrates by DC magnetron sputtering followed by rapid thermal annealing. The X-ray diffraction patterns show that Fe doping does not affect the crystallization temperature of TiCoSb phase, but seem to induce the formation of binary phases like TiSb. Hall measurements reveal that the undoped TiCoSb thin films are n-type semiconducting, while TiFe0.2Co0.8Sb turns to p-type with half-order higher carrier concentration of 1.5×1021cm-3. The vibrating sample magnetometer spectrum indicate that the TiCoSb thin film is non-magnetic and TiFexCo1-xSb (x=0.17) is weak magnetic.

Effects of Rapid Thermal Annealing on CdTe/CdS Solar Cell Fabrication

1996 ◽  
Vol 426 ◽  
Author(s):  
Y. A. Cho ◽  
W. J. Nam ◽  
H. S. Kim ◽  
G. Y. Yeom ◽  
J. K. Yoon ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Bulk Composition ◽  
Cross Sectional ◽  
Transmission Microscopy ◽  
X Ray ◽  
Cdte Thin Films

AbstractRapid thermal annealing (RTA) was applied to anneal polycrystalline CdTe thin films evaporated on CdS/ITO substrate and the effects of rapid thermal annealing temperatures and gas environments were studied. X-ray diffractometer (XRD), X-ray photoelectron spectroscopy(XPS), energy dispersive X-ray spectroscopy(EDX), cross-sectional transmission microscopy(TEM), and micro-EDX in TEM were used to characterize physical and chemical properties of rapid thermal annealed CdTe thin films. Complete CdTe/CdS photovoltaic cells were fabricated and I-V characteristics of these cells were measured under the illumination. Results showed that the bulk composition of CdTe remained stoichiometric to 550°C in the air environment and surface composition became Cd-rich. Cross-sectional TEM and micro-EDX showed columnar grains and micro-twins remained even after RTA, however, sulfur content in rapid thermal annealed CdTe caused by sulfur diffusion from CdS during the annealing was much smaller than that by furnace annealing. Among the investigated RTA temperatures and gas environments, the cell made with CdTe annealed at 550°C in the air showed the best solar energy conversion efficiency.

Germanium Implantation into Silicon: An Alternate Pre-Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction Technology

1983 ◽  
Vol 23 ◽  
Author(s):  
D.K. Sadana ◽  
E. Myers ◽  
J. Liu ◽  
T. Finstad ◽  
G.A. Rozgonyi
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Surface Region ◽  
Amorphous Layer ◽  
High Dose ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Defect Clusters ◽  
Ion Damage ◽  
Free Material

ABSTRACTGermanium implantation into Si was conducted to pre-amorphize the-si surface layer prior to a shallow/high dose (42 keV, 2 × 1015 cm−2) BF2 implant. Cross-sectional transmission electron microscopy showed that rapid thermal annealing (RTA) of the amorphous layer (without BF2 ) leaves defect-free material in the implanted region. Only a discrete layer of small (∼300Å) dislocation loops due to straggling ion damage was found to be present at a depth corresponding to the amorphous/crystalline interface. RTA of the amorphous layer with the BF2 creatpd a high density of uniformly. distributed fine defect clusters (∼50Å) in the surface region (0–500Å) in addition to the straggling ion damage. Boron and F profiles obtained by secondary ion mass spectrometry from the unannealed and rapid thermally annealed samples showed the presence of high concentrations of these impurities in the surface region where the fine defect clusters were observed. A comparison of the RTA behavior of the pre-amorphized surface layers (with or without BF2 ) produced by Ge and self-implantation is presented.

Annealing Studies of Er-Implanted GaAs and the Excitation Mechanism of Er in GaAs

1993 ◽  
Vol 301 ◽  
Author(s):  
D. W. Elsaesser ◽  
J. E. Colon ◽  
Y. K. Yeo ◽  
R. L. Hengehold ◽  
G. S. Pomrenke
Keyword(s):  
Electrical Conductivity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Optical Measurements ◽  
Large Concentration ◽  
Excitation Mechanism ◽  
Annealing Temperatures ◽  
P Type

ABSTRACTElectrical and optical measurements were performed on p-type GaAs implanted with 1013 Er ions/cm2 at an energy of 1 MeV. The samples were annealed at 650, 750, 850, or 900 °C for 15 seconds using the rapid thermal annealing technique. Although annealing at 650 °C was insufficient to recover measureable electrical conductivity in the implanted region, Er3+ 4f-4f emissions were still observed. Annealing at 750 TC produced a large concentration of hole traps at EV + 360 meV, and the most intense Er-related emissions at 1.54 μm. The two higher annealing temperatures returned the implanted region to the conductivity of the substrate but resulted in weak Er-related emissions. Two distinct Er-related centers were found, and they are believed to be the cause of the intense and weak emissions, an Er-interstitial and Er substituting for Ga, respectively.

scholarly journals Investigation on the p-type formation mechanism of nitrogen ion implanted ZnO thin films induced by rapid thermal annealing

2019 ◽  
Vol 9 (7) ◽  
pp. 3098 ◽  
Author(s):  
Zheng Huang ◽  
Haibo Ruan ◽  
Hong Zhang ◽  
Dongping Shi ◽  
Wanjun Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Formation Mechanism ◽  
Zno Thin Films ◽  
Nitrogen Ion ◽  
P Type ◽  
Ion Implanted
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