Rapid thermal annealing effects on radio-frequency magnetron-sputtered P-type GaN thin films and Al/P-type GaN Schottky diodes

2000 ◽  
Author(s):  
Ching-Wu Wang ◽  
BoShao Soong ◽  
Jing-Yu Chen ◽  
ChungTung Tzeng ◽  
ChihLiang Chen
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes ◽  
Radio Frequency Magnetron ◽  
Annealing Effects ◽  
P Type

scholarly journals Influence of Annealing Temperature on the Characteristics of Ti-Codoped GZO Thin Solid Film

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Tao-Hsing Chen ◽  
Tzu-Yu Liao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering

This study utilizes radio frequency magnetron sputtering (RF sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate and then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperatures are 300°C , 500°C, and 550°C, respectively. Ti:GZO transparent conductive oxide (TCO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering technique. The thin films are then annealed at temperatures of 300°C, 500°C, and 550°C, respectively, for rapid thermal annealing. The effects of the annealing temperature on the optical properties, resistivity, and nanomechanical properties of the Ti:GZO thin films are then systematically explored. The results show that all of the annealed films have excellent transparency (~90%) in the visible light range. Moreover, the resistivity of the Ti:GZO films reduces with an increasing annealing temperature, while the carrier concentration and Hall mobility both increase. Finally, the hardness and Young’s modulus of the Ti:GZO thin films are both found to increase as the annealing temperature is increased.

Rapid Thermal Annealing Effects in CdTe (111) Thin Films Grown on GaAs (100) Substrates

1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4220-4224 ◽  
Author(s):  
M. D. Kim ◽  
T. W. Kang ◽  
M. S. Han ◽  
T. W. Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Effects

Rapid thermal annealing induced the c-axis (00 l) preferred orientation and the p-type thermoelectric properties of Bi-Sb-Te thin films

2020 ◽  
Vol 706 ◽  
pp. 138094 ◽  
Author(s):  
Athorn Vora–ud ◽  
Somporn Thaowonkaew ◽  
Jessada Khajonrit ◽  
Kunchit Singsoog ◽  
Pennapa Muthitamongkol ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Thermoelectric Properties ◽  
Rapid Thermal Annealing ◽  
Preferred Orientation ◽  
P Type

Effect of rapid thermal annealing on Zn1-xCdxO layers grown by radio-frequency magnetron co-sputtering

2010 ◽  
Vol 45 (10) ◽  
pp. 1050-1056 ◽  
Author(s):  
J. H. Yu ◽  
J. H. Kim ◽  
D. S. Park ◽  
T. S. Jeong ◽  
C. J. Youn ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Radio Frequency Magnetron

Rapid thermal annealing effects on the electrical, structural and morphological properties of Yb/p-type InP Schottky Structure

2015 ◽  
Vol 11 (1) ◽  
pp. 73-81 ◽  
Author(s):  
V. Rajagopal Reddy ◽  
D. Sri Silpa ◽  
V. Janardhanam ◽  
Hyung-Joong Yun ◽  
Chel-Jong Choi
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Morphological Properties ◽  
Annealing Effects ◽  
P Type ◽  
Schottky Structure
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