Annealing Studies of Er-Implanted GaAs and the Excitation Mechanism of Er in GaAs

1993 ◽  
Vol 301 ◽  
Author(s):  
D. W. Elsaesser ◽  
J. E. Colon ◽  
Y. K. Yeo ◽  
R. L. Hengehold ◽  
G. S. Pomrenke
Keyword(s):  
Electrical Conductivity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Optical Measurements ◽  
Large Concentration ◽  
Excitation Mechanism ◽  
Annealing Temperatures ◽  
P Type

ABSTRACTElectrical and optical measurements were performed on p-type GaAs implanted with 1013 Er ions/cm2 at an energy of 1 MeV. The samples were annealed at 650, 750, 850, or 900 °C for 15 seconds using the rapid thermal annealing technique. Although annealing at 650 °C was insufficient to recover measureable electrical conductivity in the implanted region, Er3+ 4f-4f emissions were still observed. Annealing at 750 TC produced a large concentration of hole traps at EV + 360 meV, and the most intense Er-related emissions at 1.54 μm. The two higher annealing temperatures returned the implanted region to the conductivity of the substrate but resulted in weak Er-related emissions. Two distinct Er-related centers were found, and they are believed to be the cause of the intense and weak emissions, an Er-interstitial and Er substituting for Ga, respectively.

Rapid Thermal Annealing of B or N Implanted Monocrystalline 1-SiC Thin Films and its Effect on Electrical Properties and Device Performance

1985 ◽  
Vol 52 ◽  
Author(s):  
Jae Ryu ◽  
H. J. Kim ◽  
R. F. Davis
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Amorphous Layer ◽  
High Resistivity ◽  
Electrical Measurements ◽  
Cross Sectional ◽  
Annealing Temperatures ◽  
Type Layer ◽  
P Type

ABSTRACTThe annealing behavior of B or N dual implants in 1-SiC thin films has been studied using cross-sectional transmission electron microscopy (XTEM), secondary ion mass spectroscopy (SIMS), and four point probe electrical measurements. A high resistivity layer was produced after annealing the B implanted-amorphous layer in the temperature range from 1000°C to 1500°C for 300 a; however, the resistivity rapidly decreased as a result of annealing at higher temperatures. The reasons for these changes in resistivity and the lack of p-type conduction at all annealing temperatures in these B implants include: (1) possible compensation of the native n-type carriers, (2) reduction in the B concentration via formation of B-containing precipitates between 1300°C and 1600°C and out diffusion of this species at and above 1600°C, and (3) creation of additional n-type carriers.No precipitates or defect structure was observed in N implanted-annealed samples. The resistivity of this non amorphous n-type layer decreased with increasing annealing temperatures from 700°C to 1800°C. Furthermore n-p junction diodes were fabricated for the first time in β-SiC via N implantation into samples previously in situ doped with 8 × 1018/cm3 Al coupled with rapid thermal annealing at 1200°C for 300 a. A typical diode ideality constant and a saturation current for these diodes was 3.4 and 9 × 10-10 A/cm2, respectively.

Ultra-Shallow Junctions by Ion Implantation and Rapid Thermal Annealing: Spike-Anneals, Ramp Rate Effects

1999 ◽  
Vol 568 ◽  
Author(s):  
Aditya Agarwal ◽  
Hans-J. Gossmann ◽  
Anthony T. Fiory
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Driving Forces ◽  
Recent Experimental Data ◽  
Enhanced Diffusion ◽  
Temperature Ramp ◽  
Rate Effects ◽  
Low Energies ◽  
Ultra Shallow Junctions ◽  
P Type

ABSTRACTOver the last couple of years rapid thermal annealing (RTA) equipment suppliers have been aggressively developing lamp-based furnaces capable of achieving ramp-up rates on the order of hundreds of degrees per second. One of the driving forces for adopting such a strategy was the experimental demonstration of 30nm p-type junctions by employing a ramp-up rate of ≈400°C/s. It was subsequently proposed that the ultra-fast temperature ramp-up was suppressing transient enhanced diffusion (TED) of boron which results from the interaction of the implantation damage with the dopant. The capability to achieve very high temperature ramp-rates was thus embraced as an essential requirement of the next generation of RTA equipment.In this paper, recent experimental data examining the effect of the ramp-up rate during spike-and soak-anneals on enhanced diffusion and shallow junction formation is reviewed. The advantage of increasing the ramp-up rate is found to be largest for the shallowest, 0.5-keV, B implants. At such ultra-low energies (ULE) the advantage arises from a reduction of the total thermal budget. Simulations reveal that a point of diminishing return is quickly reached when increasing the ramp-up rate since the ramp-down rate is in practice limited. At energies where TED dominates, a high ramp-up rate is only effective in minimizing diffusion if the implanted dose is sufficiently small so that the TED can be run out during the ramp-up portion of the anneal; for larger doses, a high ramp-up rate only serves to postpone the TED to the ramp-down duration of the anneal. However, even when TED is minimized at higher implant energies via high ramp-up rates, the advantage is unobservable due to the rather large as-implanted depth. It appears then that while spike anneals allow the activation of ULE-implanted dopants to be maximized while minimizing their diffusion the limitation imposed by the ramp-down rate compromises the advantage of very aggressive ramp-up rates.

The Effect of Rapid Thermal Annealing on the Electrical and Material Characteristics of Planar Doped and Uniformly Doped GaAs/AiGaAs/InGaAs Pseudomorphic HEMT Structures

1991 ◽  
Vol 240 ◽  
Author(s):  
T. E. Kazior ◽  
S. K. Brierley
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Material Properties ◽  
Structural Changes ◽  
Electrical Characteristics ◽  
Pl Spectra ◽  
Annealing Temperatures ◽  
Si Doping ◽  
Significant Change ◽  
Ingaas Quantum Well

ABSTRACTMBE grown GaAs/Al0.25Ga0.75As/In0.85Ga0.85 As structures were subjected to SiNx capped rapid thermal annealing and their electrical and material properties were characterized by Hall measurements and photoluminescence (PL). Low temperature (5°K) PL spectra from undoped structures annealed up to 900°C indicated negligible intermixing at the AIGaAs/lnGaAs interface. For planar doped structures (Nd≈5×1012/cm2) the Hall mobility began to decrease at anneal temperatures as low as 800°C with significant degradation observed for annealing temperatures at 850°C. This data is supported by PL spectra which indicate no significant change for samples annealed at 800°C. For the samples annealed at ≥ 850°C a large increase in the full width at half maximum of the transitions from the electron sub-bands of the InGaAs quantum well were observed, suggesting that the change in electrical characteristics is primarily due to diffusion of the Si doping pulse. In contrast. Hall measurement of uniformly doped structures reveal only small decreases in mobility and no significant change in sheet concentration for anneal temperatures up to 900°C and doping levels up to 2.5×1018/cm3. PL spectra reveal no structural changes.

Rapid thermal annealing induced the c-axis (00 l) preferred orientation and the p-type thermoelectric properties of Bi-Sb-Te thin films

2020 ◽  
Vol 706 ◽  
pp. 138094 ◽  
Author(s):  
Athorn Vora–ud ◽  
Somporn Thaowonkaew ◽  
Jessada Khajonrit ◽  
Kunchit Singsoog ◽  
Pennapa Muthitamongkol ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Thermoelectric Properties ◽  
Rapid Thermal Annealing ◽  
Preferred Orientation ◽  
P Type

Influence of Low-Dose Ion-Beam Mixing on CoSi2 Formation

1992 ◽  
Vol 268 ◽  
Author(s):  
Ikasko C. Dehm ◽  
H. Ryssel
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Dose ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Annealing Temperatures ◽  
Critical Dose ◽  
Incomplete Reaction ◽  
Abrupt Interface ◽  
Complete Formation

ABSTRACTIn this study, the critical dose for ion-beam mixing of Co and Si with Ge-ions which results in homogenous CoSi2 formation after rapid thermal annealing was found. For this purpose, Co was deposited by sputtering on chemically cleaned, <100>-oriented Si and subsequently mixed with Ge ions at doses in the range of 2. 1014 to 1. 1015 cm−2. Silicidation was performed in a rapid thermal annealing (RTA) system at temperatures between 700° and 100°C. Rutherford backscattering measurements showed that annealing at 700°C results in an incomplete reaction when ion-beam mixing at a dose of 2.1014 cm−2 or no ion-beam mixing was performed. After annealing at 1000°C, TEM samples revealed an inhomogeneous CoSi2 film consisting of large grains embedded in the Si. Mixing at doses at or above 5.1014 cm−2 and subsequent RTA at 700°C resulted in uniform CoSi2 layers. Higher annealing temperatures cause larger grains and resistivity values as low as 18 μΩcm. Therefore, we demonstrated that the critical dose leading to complete formation of smooth CoSi2 films with abrupt interface is 5.1014 cm−2 which is nearly the same value as the amorphization dose of Ge in Si.

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
B.J. Skromme ◽  
N.G. Stoffel ◽  
A.S. Gozdz ◽  
M.C. Tamargo ◽  
S.M. Shibli
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Vacancy Formation ◽  
Annealing Temperatures ◽  
The Creation ◽  
Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

Rapid thermal annealing effects on the electrical, structural and morphological properties of Yb/p-type InP Schottky Structure

2015 ◽  
Vol 11 (1) ◽  
pp. 73-81 ◽  
Author(s):  
V. Rajagopal Reddy ◽  
D. Sri Silpa ◽  
V. Janardhanam ◽  
Hyung-Joong Yun ◽  
Chel-Jong Choi
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Morphological Properties ◽  
Annealing Effects ◽  
P Type ◽  
Schottky Structure

Supersaturated P-Type Polycrystaline Films Produced by Rapid Thermal Annealing of High Dose Boron Ion Implants for Interconnects and Shallow Junction Diffusion Sources

1990 ◽  
Vol 182 ◽  
Author(s):  
B. Raicu ◽  
M.I. Current ◽  
W.A. Keenan ◽  
D. Mordo ◽  
R. Brennan ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Cross Section ◽  
Rapid Thermal Annealing ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Crystal Silicon ◽  
Polysilicon Films ◽  
P Type

AbstractHighly conductive p+-polysilicon films were fabricated over Si(100) and SiO2 surfaces using high-dose ion implantation and rapid thermal annealing. Resistivities close to that of single crystal silicon were achieved. These films were characterized by a variety of electrical and optical techniques as well as SIMS and cross-section TEM.

scholarly journals A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing

2015 ◽  
Vol 821-823 ◽  
pp. 432-435 ◽  
Author(s):  
Tony Abi-Tannous ◽  
Maher Soueidan ◽  
Gabriel Ferro ◽  
Mihai Lazar ◽  
Berangère Toury ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Specific Contact Resistance ◽  
Free Sample ◽  
Elemental Analyses ◽  
Specific Contact ◽  
P Type ◽  
Al Oxide

In order to form Ti3SiC2 on 4H-SiC(0001) 8°-off, 200 nm of Ti30Al70 was deposited onto SiC substrates by magnetron sputtering from pure Ti30Al70 targets. The samples were then annealed at 1000°C for 10 min under Ar atmosphere in a Rapid Thermal Annealing (RTA) furnace. Structural analyses reveal the formation of epitaxial hexagonal Ti3SiC2 (0001) oriented. Elemental analyses show that high amount of Al and O elements are present inside the deposit. Obviously, the formation of Ti3SiC2 is accompanied by parasitic Al oxide, probably due to some unwanted oxygen residual in the RTA chamber. By using proper backing steps before the annealing, the deposit is not anymore composed of only Ti3SiC2 but accompanied with other compounds (Al3Ti, and Al). On the oxide-free sample, the specific contact resistance ρc of the Ti3SiC2 based contact on p-type 4H-SiC (having Na= 2×1019 cm-3) was measured to be as low as 6×10-5 Ω.cm2.

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