scholarly journals The Structure of Oxygen-Implanted (111) Silicon Before and After Heat-Pulse Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
Z. Liliental-Weber ◽  
R. W. Carpenter ◽  
J. C. Kelly
Keyword(s):  
Polycrystalline Silicon ◽  
Defect Density ◽  
Amorphous Layer ◽  
Heat Pulse ◽  
High Defect Density ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Crystalline Substrate ◽  
Before And After ◽  
Buried Layer

ABSTRACTThe structure of (111) oriented, unheated oxygen-implanted silicon (dose -7.3×1016cm-2) has been studied by transmission electron microscopy (TEM). The as-implanted material exhibited four structurally different layers: defect-free monocrystaline silicon, amorphous silicon, monocrystalline silicon with a high defect density, and the perfect crystalline substrate. After heat-pulse annealing for 20s at 800°C, 900°C, or 1000°C, the amorphous layer recrystallized resulting in polycrystalline silicon, rich in oxygen. The uniform insulator buried layer was not formed under these specific implantation and annealing conditions.

Structure of the Ti-Single Crystal Si Interface

1990 ◽  
Vol 181 ◽  
Author(s):  
S. Ogawa ◽  
T. Kouzaki ◽  
T. Yoshida ◽  
R. Sinclair
Keyword(s):  
Amorphous Alloy ◽  
Single Crystal ◽  
Amorphous Layer ◽  
Alloy Formation ◽  
Transmission Electron ◽  
Impurity Species ◽  
Before And After ◽  
First Time ◽  
Atomically Flat ◽  
Eds Microanalysis

ABSTRACTThe Ti-single crystal Si interfaces, before and after annealing in argon, were examined by cross section high resolution transmission electron microscopy (HRTEM) combined for the first time with 2nmΦ probe for energy dispersive spectrometry (EDS). HRTEM shows that there is amorphous alloy formation at the Ti-Si interface. The thickness of the reacted layer is ∼1.7nm for single crystal Si, independent of doping level and impurity species such as As and B, and is ∼2.5nm for back sputter-amorphized Si. After annealing at 430°C for 30min, the thickness of the amorphous alloy increases up to ∼11.5nm. High spatial resolution EDS microanalysis has been obtained. The results show that reliable compositions can be deduced at this level since some of the layers are only about 2nm thick. The amorphous alloy formed at the deposition step was found to be Ti55Si45. After annealing, the composition across the amorphous layer varied from about 70%Si near the substrate to about 30%S1 close to the Ti interface. The substrate interface is atomically flat. Interpretation of the behavior in terms of the metastable Ti-Si phase diagram calculated by Holloway and Bormann will be discussed.

Synthesis of Si1-xGex-on-Insulator by 74Ge+ Ion Implantation in a Simox Substrate

1993 ◽  
Vol 316 ◽  
Author(s):  
C.J. Patel ◽  
C.D. Marsh ◽  
U. Magnusson ◽  
C. Jeynes ◽  
M. Ostling ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Defect Density ◽  
Rutherford Backscattering Spectrometry ◽  
Final Heat Treatment ◽  
Conductivity Measurements ◽  
Band Gap Engineering ◽  
High Defect Density ◽  
Transmission Electron ◽  
Different Temperatures

ABSTRACTA single crystalline Si1-xGex overlayer on insulator is realised by the implantation of germanium into a SIMOX (Separation by IMplantation of OXygen) substrate. Two SIMOX samples were implanted with 74Ge+ at elevated temperature (≈600°C), and subsequently annealed at different temperatures and anneal ambients. The microstructure, stoichiometry, and conductivity of the Si1-xGex over-layer were studied using transmission electron microscopy, Rutherford backscattering spectrometry/ion channelling and two-probe conductivity measurements. As a result of lattice reordering after final heat treatment, and despite high defect density observed in the XTEM microstructure, the measured conductivity of the over-layer is higher than of the starting SIMOX material. These results suggest a possibility of band-gap engineering by synthesis of Si1-xGex-on-insulator.

Effect of Growth Temperature and Annealing on ZnO

2002 ◽  
Vol 744 ◽  
Author(s):  
A. L. Cai ◽  
J. F. Muth ◽  
M. J. Reed ◽  
H. L. Porter ◽  
C. Jin ◽  
...  
Keyword(s):  
Structural Characteristics ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Temperature Range ◽  
Band Emission ◽  
Annealing Conditions ◽  
Green Band Emission ◽  
Transmission Electron ◽  
Before And After

ABSTRACTA series of epitaxial single crystal ZnO samples were grown by Pulsed Laser Deposition (PLD) on c-axis, double-side polished sapphire at temperatures ranging from 600°C to 800°C. A comprehensive optical study, consisting of cathodoluminescence (CL) and transmission spectroscopy measurements, was performed before and after annealing the samples in air and oxygen environments. The structural characteristics of the films were observed by x-ray diffraction and transmission electron microscopy (TEM). Using these measurements, the data revealed that annealing significantly improved the luminescence and exciton line-width of the better material grown at the higher end of the temperature range. In lower quality samples grown at the lower end of the temperature range, the optical quality of the material was degraded. In the samples grown at higher temperatures, annealing improved the optical qualities. An increase in the below band-gap, green band emission was also observed under some annealing conditions.

A Comparison of Millisecond Annealing of B Implants and Isothermal Annealing for Times of a Few Seconds

1984 ◽  
Vol 35 ◽  
Author(s):  
R. A. Mcmahon ◽  
D. G. Hasko ◽  
H. Ahmed ◽  
W. M. Stobbs ◽  
D. J. Godfrey
Keyword(s):  
Electron Microscopy ◽  
Isothermal Annealing ◽  
Defect Density ◽  
Concentration Profiles ◽  
Isothermal Heating ◽  
Annealing Conditions ◽  
Isothermal Anneal ◽  
Transmission Electron ◽  
Time Regime ◽  
Line Beam

ABSTRACTThe annealing behaviour of B implants in the millisecond time regime using a combination of swept line beam and background heating is compared with isothermal annealing with heating cycles of a few seconds. Carrier concentration profiles derived from spreading resistance measurements show that under annealing conditions which restrict diffusion, millisecond processing gives higher activation of B implants than isothermal heating. Transmission electron microscopy shows that millisecond annealing also results in a lower defect density than that following an equivalent isothermal anneal.

Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC(000-1)

2016 ◽  
Vol 858 ◽  
pp. 1129-1132
Author(s):  
Filippo Giannazzo ◽  
Giuseppe Nicotra ◽  
Ioannis Deretzis ◽  
Aurora Piazza ◽  
Gabriele Fisichella ◽  
...  
Keyword(s):  
High Temperatures ◽  
Amorphous Layer ◽  
Force Microscopy ◽  
Annealing Conditions ◽  
Atomic Force ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Disordered Layer ◽  
Electron Energy Loss

This paper presents an investigation of the morphological and structural properties of graphene (Gr) grown on SiC(000-1) by thermal treatments at high temperatures (from 1850 to 1950 °C) in Ar at atmospheric pressure. Atomic force microscopy and micro-Raman spectroscopy showed that the grown Gr films are laterally inhomogeneous in the number of layers, and that regions with different stacking-type (coupled or decoupled Gr films) can coexist in the same sample. Scanning transmission electron microscopy and electron energy loss spectroscopy shoed that a nm-thick C-Si-O amorphous layer is present at the interface between Gr and SiC. Basing on these structural results, the mechanisms of Gr growth on the C-face of SiC under these annealing conditions and the role of this disordered layer in the suppression of epitaxy between Gr and the substrate have been discussed.

Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate

2005 ◽  
Vol 483-485 ◽  
pp. 221-224 ◽  
Author(s):  
A. Shoji ◽  
Mitsutaka Nakamura ◽  
K. Mitikami ◽  
Toshiyuki Isshiki ◽  
Satoru Ohshima ◽  
...  
Keyword(s):  
High Resolution ◽  
Epitaxial Layer ◽  
Defect Density ◽  
Si Substrate ◽  
Electron Microscopic ◽  
Grown Layer ◽  
Si Substrates ◽  
High Defect Density ◽  
Transmission Electron ◽  
Transmission Electron Microscopic

The pendeo epitaxial growth has been applied for the growth of 3C-SiC on (001) Si substrates. This growth was performed by VPE using hexamethyldisilane (HMDS) as a source gas. To characterize the crystallinity of the seed 3C-SiC and the pendeo epitaxial layer, the high resolution transmission electron microscopic (HRTEM) analysis was carried out. In the vertically grown layer on the seed 3C-SiC, the high-defect-density regions were observed. On the contrary, the low-defect-density regions were observed in the laterally grown layer. It was revealed from the TEM observations that lattice information can be transferred through the seed 3C-SiC while defects can be prevented from propagating into the epitaxial layer due to the presence of the air gap.

Xrd and Xtem Investigation of Polycrystalline Silicon Carbide on Polycrystalline Silicon

1996 ◽  
Vol 444 ◽  
Author(s):  
S. Roy ◽  
C. A. Zorman ◽  
C. H. Wu ◽  
A. J. Fleischman ◽  
M. Mehregany
Keyword(s):  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Before And After ◽  
Pressure Chemical ◽  
Polysilicon Films ◽  
Sic Films

AbstractAtmospheric pressure chemical vapor deposition (APCVD) was used to grow silicon carbide (SiC) on as-deposited and annealed polycrystalline silicon (polysilicon) films which were deposited on oxidized Si wafers. X-ray diffraction (XRD) reveals that SiC films grown on asdeposited polysilicon have a (110) orientation. XRD performed on as-deposited polysilicon before and after SiC growth reveals that the orientation of polysilicon changes from (110) to a mixture of (110) and (11) during growth of 2 μm-thick SiC films. Cross-sectional transmission electron microscopy (XTEM) images of the SiC/polysilicon interface show that the SiC appears to be unaffected by the recrystallization of the underlying polysilicon during the SiC growth. XRD from samples of SiC grown on annealed polysilicon show that both films have (110) and (111) orientations. For SiC films grown on annealed polysilicon substrates, XTEM images show that the crystallinity of the annealed polysilicon substrate does not significantly change during SiC growth. Furthermore, an investigation of the SiC/annealed-polysilicon interface using selected area diffraction (SAD) shows that an epitaxial relationship exists between the polysilicon and SiC grains.

An Electron Microscope Study of Interdiffusion and Compound Formation in Ta-Au Thin Films

1973 ◽  
Vol 31 ◽  
pp. 32-33 ◽  
Author(s):  
T. C. Tisone ◽  
S. Lau
Keyword(s):  
Electron Microscope ◽  
Electron Microscope Study ◽  
Thermally Grown Oxide ◽  
Ion Milling ◽  
Compound Formation ◽  
Technology Application ◽  
Transmission Electron ◽  
Before And After ◽  
Au Thin Films

In a study of the properties of a Ta-Au metallization system for thin film technology application, the interdiffusion between Ta(bcc)-Au, βTa-Au and Ta2M-Au films was studied. Considered here is a discussion of the use of the transmission electron microscope(TEM) in the identification of phases formed and characterization of the film microstructures before and after annealing.The films were deposited by sputtering onto silicon wafers with 5000 Å of thermally grown oxide. The film thicknesses were 2000 Å of Ta and 2000 Å of Au. Samples for TEM observation were prepared by ultrasonically cutting 3mm disks from the wafers. The disks were first chemically etched from the silicon side using a HNO3 :HF(19:5) solution followed by ion milling to perforation of the Au side.

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

Effect of MWCNT doping on the structural and optical properties of PVC/PVDF polymer blend

2017 ◽  
Vol 13 (2) ◽  
pp. 4640-4647
Author(s):  
A. M. Abdelghany ◽  
M.S. Meikhail ◽  
S.I. Badr ◽  
A. S. Momen
Keyword(s):  
Surface Damage ◽  
X Ray Diffraction ◽  
Dopant Content ◽  
Casting Technique ◽  
Transmission Electron ◽  
Dopant Level ◽  
Before And After ◽  
Carbon Nano Tubes ◽  
Small Band ◽  
Vibrational Bands

Thin film samples of pristine polyvinyl chloride (PVC), poly vinyldine fluoride (PVDF) in combination with their blend in addition to samples containing factorial mass fraction of multi wall carbon nano-tubes (MWCNTs) in the dopant level were prepared via routine casting technique using tetrahydrofurane (THF) as a common solvent. X-ray diffraction and transmission electron microscopy (TEM) depict the nano-scale (15-25 nm) of functionalized MWCNTs with no surface damage results from functionalization process.X-ray diffraction (XRD) shows a semi-crystalline nature of PVDF with evidence for more than one phase namely a and b phases. The fraction of b phase was calculated and correlated to the dopant content. FTIR optical absorption spectra revels a preservation of the main vibrational bands before and after addition of MWCNTs in the doping level with a presence of new small band 1151 cm-1 assigned for the interaction and complexation between constituents.

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