A Comparison of Millisecond Annealing of B Implants and Isothermal Annealing for Times of a Few Seconds

1984 ◽  
Vol 35 ◽  
Author(s):  
R. A. Mcmahon ◽  
D. G. Hasko ◽  
H. Ahmed ◽  
W. M. Stobbs ◽  
D. J. Godfrey
Keyword(s):  
Electron Microscopy ◽  
Isothermal Annealing ◽  
Defect Density ◽  
Concentration Profiles ◽  
Isothermal Heating ◽  
Annealing Conditions ◽  
Isothermal Anneal ◽  
Transmission Electron ◽  
Time Regime ◽  
Line Beam

ABSTRACTThe annealing behaviour of B implants in the millisecond time regime using a combination of swept line beam and background heating is compared with isothermal annealing with heating cycles of a few seconds. Carrier concentration profiles derived from spreading resistance measurements show that under annealing conditions which restrict diffusion, millisecond processing gives higher activation of B implants than isothermal heating. Transmission electron microscopy shows that millisecond annealing also results in a lower defect density than that following an equivalent isothermal anneal.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 713-716 ◽  
Author(s):  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Depth Distribution ◽  
Electrical Activation ◽  
Extended Defects ◽  
Capping Layer ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Lattice Damage ◽  
Reduced Surface

This paper reports on the electrical activation and structural analysis of Al implanted 4H-SiC. The evolution of the implant damage during high temperature (1650 – 1700 °C) annealing results in the presence of extended defects and precipitates, whose density and depth distribution in the implanted sheet was accurately studied for two different ion fluences (1.31014 and 1.31015 cm-2) by transmission electron microscopy. Furthermore, the profiles of electrically active Al were determined by scanning capacitance microscopy. Only a limited electrical activation (10%) was measured for both fluences in the samples annealed without a capping layer. The use of a graphite capping layer to protect the surface during annealing showed a beneficial effect, yielding both a reduced surface roughness and an increased electrical activation (20% for the highest fluence and 30% for the lowest one) with respect to samples annealed without the capping layer.

LOW-Temperature Epitaxial Growth of GaAs on Si Substrates by MBE

1992 ◽  
Vol 263 ◽  
Author(s):  
Ting-Yen Chiang ◽  
En-Huery Liu ◽  
Der-Hwa Yiin ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Defect Density ◽  
Solution Treatment ◽  
Plan View ◽  
Si Substrates ◽  
Gaas On Si ◽  
Transmission Electron

ABSTRACTThis paper presents results of the low—temperature epitaxial growth of GaAs on Si substrates with orientation 1°—4° off (100) by molecular beam epitaxy (MBE). The epitaxial growth ·is carried out on Si wafers subjected to HF solution treatment by “spin-etch” technique before the wafer is transferred to the entry chamber of MBE system. Methods used for reducing defect density in the epitaxial layers are proposed. The characterization techniques include cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, scanning electron microscopy (S EM), and double crystal X-ray diffraction (DCXRD). Epitaxial films with a full width at half—maximum (FWHM) of about 310 arcsec measured by DCXRD are obtained without annealing.-

Ge Growth on Nanostructured Silicon Surfaces

2005 ◽  
Vol 862 ◽  
Author(s):  
Ganesh Vanamu ◽  
Abhaya K. Datye ◽  
Saleem H. Zaidi
Keyword(s):  
Electron Microscopy ◽  
Dislocation Density ◽  
Full Width Half Maximum ◽  
Defect Density ◽  
Chemical Vapor ◽  
Silicon Surfaces ◽  
X Ray Diffraction ◽  
Etch Pit ◽  
Transmission Electron

AbstractWe report highest quality Ge epilayers on nanoscale patterned Si structures. 100% Ge films of 10 μm are deposited using chemical vapor deposition. The quality of Ge layers was examined using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and high-resolution x-ray diffraction (HRXRD) measurements. The defect density was evaluated using etch pit density measurements. We have obtained lowest dislocation density (5×105 cm-2) Ge films on the nanopatterned Si structures. The full width half maximum peaks of the reciprocal space maps of Ge epilayers on the nanopatterned Si showed 93 arc sec. We were able to get rid of the crosshatch pattern on the Ge surface grown on the nanopatterned Si. We also showed that there is a significant improvement of the quality of the Ge epilayers in the nanopatterned Si compared to an unpatterned Si. We observed nearly three-order magnitude decrease in the dislocation density in the patterned compared to the unpatterned structures. The Ge epilayer in the patterned Si has a dislocation density of 5×105 cm-2 as compared to 6×108 cm-2 for unpatterned Si.

Electron Microscopy Study of Structural Changes During Isothermal Annealing of a Ni4Mo-Based Alloy Containing Chromium

1985 ◽  
Vol 62 ◽  
Author(s):  
K. Vasudevan ◽  
E. E. Stansbury
Keyword(s):  
Electron Microscopy ◽  
Structural Changes ◽  
Isothermal Annealing ◽  
Stacking Faults ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Study Phase ◽  
Transmission Electron ◽  
Optical Microstructure ◽  
Second Phases

ABSTRACTTransmission electron microscopy has been used to study phase transformations in a Ni4Mo alloy containing 2.08 wt pct chromium following isothermal annealing at 850, 800 and 700°C. At these temperatgres, the DO22 phase forms initially, which then transforms to Ni3Mo. At 700°C, the DO22 phase forms from bands composed of Ni4Mo and Ni2Mo aligned parallel to {111} fcc planes, and is relatively stable. A second mechanism for the formation of Ni3Mo occurs at 700°C. Large Ni4Mo domains form at grain boundaries. These su~sequently transform to Ni3Mo, with the simultaneous presence of stacking faults on (010) Ni3Mo planes.These observations are correlated to the optical microstructure. Grain size influences the type, volume, and distribution of second phases. Sequences and mechanisms of transformations are related to the experimental observations.

An analysis of high temperature (1150 °C) furnace annealing of buried oxide wafers formed by ion implantation

1989 ◽  
Vol 4 (1) ◽  
pp. 167-176 ◽  
Author(s):  
S. R. Wilson ◽  
M. E. Burnham ◽  
M. Kottke ◽  
R. P. Lorigan ◽  
S. J. Krause ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Structural Changes ◽  
Relative Number ◽  
Silicon On Insulator ◽  
Precipitate Size ◽  
Buried Oxide ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Residual Damage

Silicon-on-insulator films were formed by ion implantation of oxygen and were treated with various annealing cycles at peak temperatures of 1150 °C, 1200 °C, and 1250 °C in a conventional diffusion furnace. The objective of this study was to examine the structural effects on samples with similar oxygen diffusion lengths (from 17 to 33 μm) achieved by annealing at different times and temperatures. The oxygen and silicon distributions, as well as the residual damage and precipitate size and distribution, were measured by Auger electron microscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy. In agreement with previous findings, higher temperatures produced a larger and less defective, “precipitate-free” superficial Si region. The buried oxide layer thickened from 0.33 μm to a maximum of 0.43 μm as some precipitates were incorporated into the buried oxide while others adjacent to the buried oxide grew in size (up to 47 nm) and decreased in relative number. A new result of this systematic study of annealing conditions was that the peak temperature has a greater effect on the morphology and crystal quality of the superficial Si structure than does time at temperature. Structural changes for longer anneals at 1150 °C are not equivalent to shorter anneals at 1250 °C even though the diffusion length of oxygen for these treatments is the same.

Phase Transformations in Co/Nb and Co/Zr Multilayer Film Stacks.

1991 ◽  
Vol 230 ◽  
Author(s):  
J. C. Lin ◽  
R. A. Hoffman
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Transformations ◽  
Multilayer Film ◽  
Isothermal Annealing ◽  
Ion Beam ◽  
Equilibrium Phase ◽  
Stable Configuration ◽  
Ion Beam Mixing ◽  
Transmission Electron

AbstractIon-beam mixing and isothermal annealing techniques were applied to induce phase transformations in Co/Nb and Co/Zr multilayer film stacks. Transmission electron microscopy(TEM) and x-ray diffraction(XRD) were used to characterize the microstructure of the films. Interfacial morphology and chemistry of the films were examined by Rutherford backscattering spectrometry(RBS) and cross-section transmission electron microscopy(XTEM). The formation of amorphous phases was found in both systems by either technique. A comparison of the phase transformation mechanisms induced by ion-beam mixing and isothermal annealing is given. The thermodynamic and kinetic factors controlling the phase formation and stability are discussed. For the isothermal annealing, the final stable configuration is predicted by equilibrium phase diagrams.

Structural Characterization of Nc-Si/A-Sio2 Superlattices Subjected To Thermal Treatment

1998 ◽  
Vol 536 ◽  
Author(s):  
G. F. Grom ◽  
L. Tsybeskov ◽  
K. D. Hirschman ◽  
P. M. Fauchet ◽  
J. P. McCaffrey ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Defect Density ◽  
High Temperature Annealing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Si Nanocrystals

AbstractThe morphology of nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs) is studied using Raman spectroscopy in the acoustic and optical phonon ranges, transmission electron microscopy (TEM), and atomic force microscopy (AFM). It is demonstrated that high temperature annealing (up to 1100°C) and oxidation in O2/H2O ambient do not destroy the SL structure, which retains its original periodicity and nc-Si/a-SiO2 interface abruptness. It is found that oxidation at high temperatures reduces the defect density in nc-Si/a-SiO2 SLs and induces the lateral coalescence of Si nanocrystals (NCs). The size, shape, packing density, and crystallographic orientation of the Si nanocrystals are studied as a function of the oxidation time.

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