The Study on The Under Bump Metallurgy (Ubm) and 63SN-37PB Solder Bumps Interface for Flip Chip Interconnection

1998 ◽  
Vol 515 ◽  
Author(s):  
Se-Young Jang ◽  
Kyung-Wook Paik

ABSTRACTIn the flip chip interconnection on organic substrates using eutectic Pb/Sn solder bumps, highly reliable Under Bump Metallurgy (UBM) is required to maintain adhesion and solder wettability. Various UBM systems such as l.tm Al/0.2 μm Ti/5 μm Cu, l μm A1/0.2 μm Ti/l μm Cu, 1 μm A1/0.2 μm Ni/1 μm Cu and 1 μm At/10.2μm Pd/l μm Cu, laid under eutectic Pb/Sn solder of low melting point, were investigated with regard to their interfacial reactions and adhesion properties. The effects of numbers of solder reflow and aging time on the growth of intermetallic compounds (IMC) and on the solder ball shear strength were investigated. Good ball shear strength was obtained with 1 μm AI/0.2μm Ti/5μm Cu and 1 μm Al/0.2 μm Ni/l μm Cu even after 4 solder reflows or 7 day aging at 150°C. In contrast, l μm Al/0.2 μm Ti/l μm Cu and l μm A1/0.21μm Pd/μm Cu shows poor ball shear strength. The decrease of the shear strength was mainly due to the direct contact between solder and nonwettable metal such as Ti and Al resulting in a delamination. Thin 1 μm Cu and 0.2 μm Pd diffusion barrier layer were completely consumed by Cu-Sn and Pd-Sn reaction.

2015 ◽  
Vol 2015 (1) ◽  
pp. 000799-000805
Author(s):  
Marek Gorywoda ◽  
Rainer Dohle ◽  
Bernd Kandler ◽  
Bernd Burger

Electromigration comprises one of the processes affecting the long-term reliability of electronic devices; it has therefore been the focus of many investigations in recent years. In regards to flip chip packaging technology, the majority of published data is concerned with electromigration in solder connections to metallized organic substrates. Hardly any information is available in the literature on electromigration in lead-free solder connections on thin film ceramic substrates. This work presents results of a study of electromigration in lead-free (SAC305) flip chip solder bumps with a nominal diameter of 40 μm or 30 μm with a pitch of 100 μm on silicon chips assembled onto thin film Al2O3 ceramic substrates. The under bump metallization (UBM) comprised of a 5 μm thick electroless nickel immersion gold (ENIG) layer directly deposited on the AlCu0.5 trace. The ceramic substrates were metallized using a thin film multilayer (NiCr-Au(1.5 μm)-Ni(2 μm) structure on the top of which wettable areas were produced with high precision by depositing flash Au (60 nm) of the required diameter (40 μm or 30 μm). All electromigration tests were performed at the temperature of 125 °C. Initially, one chip assembly with 40 μm and one with 30 μm solder bumps was loaded with the current density of 8 kA/cm2 for 1,000 h. The assemblies did not fail and an investigation with SEM revealed no significant changes to the microstructure of the bumps. Thereafter seven chip assemblies with 40 μm solder bumps and five assemblies with 30 μm bumps were subjected to electromigration tests of 14 kA/cm2 or 25 kA/cm2, respectively. Six of the 40 μm-assemblies failed after 7,000 h and none of the 30 μm-assemblies failed after 2,500 h of test duration so far. Investigation of failed samples performed with SEM and EDX showed asymmetric changes of microstructure in respect to current flow. Several intermetallic phases were found to form in the solder. The predominant damage of the interconnects was found to occur at the cathode contact to chip; the Ni-P layers there showed typical columnar Kirkendall voids caused by migration of Ni from the layers into the solder. Failure of the contacts apparently occurred at the interface between Ni-P and solder. In summary, the results of the study indicate a very high stability of lead-free solder connections on ceramic substrates against electromigration. This high stability is primarily due to a better heat dissipation and thus to a relatively low temperature increase of the ceramic packages caused by resistive heating during flow of electric current. In addition, the type of the metallization used in the study seems to be more resistant to electromigration than the standard PCB metallization as it does not contain a copper layer.


2004 ◽  
Vol 126 (3) ◽  
pp. 359-366 ◽  
Author(s):  
Changqing Liu ◽  
Paul Conway ◽  
Dezhi Li ◽  
Michael Hendriksen

This research seeks to characterize the micro-mechanical behavior of Sn-Ag-Cu solder bumps/joints generated by fine pitch flip chip assembly processes. The solder bumps and joints that were aged at either 80 °C or 150 °C for up to 440 hours (∼18 days); have been studied by an analysis using micro-shear testing and nano-indentation techniques. The shear test of the aged bumps showed a slight increase in shear strength after an initial period of aging (∼50 hours) as compared to the non-aged bumps, but a decrease after longer aging (e.g. 440 hours). A brittle Ag3Sn phase formed as large stick-like features in the body of bulk solder and near the interface of solder/UBM during the initial aging, and is attributed with the increase of shear strength, along with the refinement of the bump microstructure. However, as the time of aging extended, the solder bumps were softened due to grain growth and re-crystallization. It was found that the formation of brittle phases in the body of solder and along the interfaces caused localized stress concentration, which can significantly affect joint reliability. In addition, Nano-testing identified a large lamellar Au-rich structure, formed in the solder and interface of the solder/PCB in the joints after the aging process at 150 °C. These are believed to be detrimental to joint reliability.


Author(s):  
Babak Talebanpour ◽  
Doug Link

Flip chip technology is widely used today to support the demand for high interconnect density of modern microelectronic circuits. Conventionally, solder bumps have provided the electrical and mechanical connection between the chip and the substrate. The solder bumps are prone to fatigue and failure especially in large chips and/or mobile devices. Conventional underfilling process which consists of flowing an epoxy under the chip and curing it after the flip chip connections are made mechanically supports the assembly, significantly reducing the shear stresses on the bumps and minimizing the chip warpage due to thermal stresses. However, underfill also has side effects. The flow of underfill depends on a lot of parameters usually can be incomplete or containing a lot of voids, inconsistent underfill results in unpredictable overall durability or manufacturing survivability. Furthermore, underfilling introduces certain components of stress, this form of stress can have adverse effect on the electrical performance of the die if it occurs close to stress sensitive parts. In this study, the effect of underfilling and its quality on the clock frequency shift of a DSP (Digital Signal Processor) chip used by Starkey Hearing Technologies is investigated. Clock frequency measurements after a solder reflow process has been compared for different underfill materials, and underfill quality. Finite element analysis was implemented to assess the stress transferred to the clock circuit on the die and examine how existence of underfill, bump height, location of bumps, and underfill voids affect the stress. The following results have been concluded based on the work presented in this paper:The conventional underfilling process for dies with very small standoff heights can be very in consistent, strongly depending on the gap uniformity, flex traces, cleanliness of the package after solder reflow, etc. large percentage of delamination and voids can occur. The voids and delamination can cause solder extrusion as well as inconsistent stress distribution on the die.Although underfilling causes large normal stresses on the die, it reduces the effective stress on the die which can translate to less warpage and the problems associated with it.The height of the bumps does not strongly affect the amount of stress build up on the die if it does not compromise a uniform underfill.Relocation of the bumps away from the clock circuit significantly reduces the stress on the clock, and it has been shown to minimize the clock shift in practice. A minimum amount of distance between the clock circuit and solder bumps should be considered when DSP layout are designed.If the clock circuit surface is not in contact with the underfill, normal stresses will not be transferred to the clock circuit minimizing the clock frequency shift. The best approach to implement this method is wafer-level underfill technique. The underfill will be applied at the wafer fab and precision lasers can cut the underfill laminate at desired locations. This process can guarantee support for the die by a uniform underfill, while stress sensitive parts will be protected against unwanted thermal stresses.


2014 ◽  
Vol 2014 (1) ◽  
pp. 000850-000855
Author(s):  
Hongtao Gao ◽  
Jun Lu ◽  
Richard Lu ◽  
Wei Xin ◽  
Xiaojing Xu ◽  
...  

Copper wire bonding in IC packages is not always suitable for devices with active circuit under bonding pad because higher bonding power required for copper wire bonding may cause top aluminum metal splash and mechanically impact the circuit underneath. Silver wire is an alternative solution to this problem based on its physical properties and lower cost compared to gold wire. Ag88%Au8.5%Pd2.5%X1% and Ag95%Au1.5%Pd2.5%X1% alloyed silver wires are used in the study to compare with copper and gold wires of 99.99% in purity. As bonding power plays a dominating role in wire bonding, we focused on the effects of silver, copper and gold bonding wires with different bonding power on the top aluminum metal splash of power device by Optical Microscope(OM) and Scanning Electron Microscope(SEM). The ball shear strength of the bonding wires with different bonding power in samples without mold compound encapsulation was investigated before and after 24, 48, 96 and 192 hours of pressure cooker test (PCT). The intermetallic compound (IMC) formed between silver and aluminum was confirmed by focus ion beam (FIB) and transmission electron microscope (TEM). Although the top surface of the silicon device shows no significant difference after aluminum layer removal for all three wire types, the severity level of vertical deformation and side splash of aluminum layer due to copper wire bonding is much more than silver or gold wire using same amount of bonding power. Ball shear strength of non-encapsulated silver wire decreases dramatically after PCT aging compared with copper wire or gold wire and some samples show zero shear strength after PCT 96 hours and PCT 192 hours for silver wires doped with Pd/Au. Furthermore, larger bonding power induces higher ball shear strength. The major IMC compositions between silver and aluminum are Ag3Al and Ag2Al. A thermo dynamic model was built to explain why silver wire is prone to corrosion compared with copper wire by humidity although copper is easier to be ionized than silver. No electrical test was performed as the samples cannot be tested without package encapsulation and singulation. Furthermore, silver wire samples in SO8 package with mold compound encapsulation were subjected to highly accelerated stress test (HAST), PCT, temperature cycle test (TCT) after MSL1 preconditioning test as well as high temperature operation life test (HTOL) according to JEDEC procedures. The encapsulated samples using either Ag 88wt% or Ag95wt% alloys all passed MSL1 and PCT/HAST/TCT/HTOL. Drain to source on-resistance (Rdson) of the device including package parasitics was measured and it has no significant difference between silver wire and gold wire. The results from this study shows promising data using silver alloy wires but care should be taken to further understand the degradation of silver-aluminum interface under severe humidity condition. Using other metallization on silicon top surface such as NiAu or CuAu can significantly alleviate the interface problem related to AgAl.


2002 ◽  
Vol 43 (8) ◽  
pp. 1858-1863 ◽  
Author(s):  
Chang-Bae Lee ◽  
Seung-Boo Jung ◽  
Young-Eui Shin ◽  
Chang-Chae Shur

2010 ◽  
Vol 87 (3) ◽  
pp. 517-521 ◽  
Author(s):  
Sang-Su Ha ◽  
Jin-Kyu Jang ◽  
Sang-Ok Ha ◽  
Jeong-Won Yoon ◽  
Hoo-Jeong Lee ◽  
...  

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