Hydrogen Structures in Heavily Hydrogenated Crystalline and Amorphous Silicon

1998 ◽  
Vol 513 ◽  
Author(s):  
W. B. Jackson ◽  
A. Franz ◽  
Y. Chabal ◽  
M. K. Weldon ◽  
H.-C. Jin ◽  
...  
Keyword(s):  
Binding Energy ◽  
Ir Spectra ◽  
Amorphous Silicon ◽  
Deformation Mode ◽  
Hydrogen Binding ◽  
Transport Barrier ◽  
Surface Evolution ◽  
Amorphous Si ◽  
Two Peaks ◽  
Strong Mode

ABSTRACTThe hydrogen binding energy distribution and IR spectra of hydrogen platelets in c-Si have been measured and compared to H in other forms of silicon including hydrogenated polycrystalline and amorphous Si. The binding distribution for platelet containing samples, determined using H evolution, exhibits two peaks: a bulk peak at 1.8–1.9 eV below the transport barrier, and a second possibly surface related peak 1.8–1.9 eV below the surface evolution barrier. The bulk peak grows at 250C and is consistent with calculated energies for platelet structures. The same two evolution peaks are found in hydrogenated polycrystalline Si and amorphous silicon. The IR spectra for heavily hydrogenated c-Si are dominated by the stretching modes at 2076 and 2128 cm-1. Most surprisingly there appears to be a strong mode at 856 cm-1 which is associated with a deformation mode of SiH3. Even more surprising, this SiH3 856 cm-1 mode remains until 550 C indicating that the SiH3 containing structures are rather stable.

Enhanced crystallization and phase transformation of amorphous silicon nitride under high pressure

2001 ◽  
Vol 16 (1) ◽  
pp. 67-75 ◽  
Author(s):  
Ya-Li Li ◽  
Yong Liang ◽  
Fen Zheng ◽  
Xian-Feng Ma ◽  
Suo-Jing Cui ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Transformation ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystallization Temperature ◽  
Amorphous Materials ◽  
Normal Pressure ◽  
Nucleation And Growth ◽  
Amorphous Silicon Nitride ◽  
Amorphous Si

The crystallization and phase transformation of amorphous Si3N4 ceramics under high pressure (1.0–5.0 GPa) between 800 and 1700 °C were investigated. A greatly enhanced crystallization and α–β transformation of the amorphous Si3N4 ceramics were evident under the high pressure, as characterized by that, at 5.0 GPa, the amorphous Si3N4 began to crystallize at a temperature as low as 1000 °C (to transform to a modification). The subsequent a–b transformation occurred completed between 1350 and 1420 °C after only 20 min of pressing at 5.0 GPa. In contrast, under 0.1 MPa N2, the identical amorphous materials were stable up to 1400 °C without detectable crystallization, and only a small amount of a phase was detected at 1500 °C. The crystallization temperature and the a–b transformation temperatures are reduced by 200–350 °C compared to that at normal pressure. The enhanced phase transformations of the amorphous Si3N4 were discussed on the basis of thermodynamic and kinetic consideration of the effects of pressure on nucleation and growth.

C-V and Capacitance Transient Analysis of Self-Implanted Amorphous Si Layers Regrown by Swept-Line Electron Beam (Sled) Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
K. J. Soda ◽  
R. Y. Dejule ◽  
B. G. Streetman
Keyword(s):  
Electron Beam ◽  
Amorphous Silicon ◽  
Transient Analysis ◽  
Similar Data ◽  
Annealed Material ◽  
Amorphous Si ◽  
Dopant Redistribution ◽  
Capacitance Transient

ABSTRACTIt is demonstrated that swept-line electron beam (SLEB) annealing can be successfully employed to recrystallize relatively deep (∼0.5 μm) Si-implanted amorphous silicon layers. DLTS and C-V analysis of these layers show significant reductions in concentration of residual defects and magnitude of dopant redistribution effects. For comparison, similar data for furnace annealed material is also presented.

Silicon-Hydrogen Bonds in Boron and Phosphorous Doped Polycrystalline Silicon Thin Films

2004 ◽  
Vol 808 ◽  
Author(s):  
R. Saleh ◽  
N. H. Nickel
Keyword(s):  
Binding Energy ◽  
Polycrystalline Silicon ◽  
Binding Energies ◽  
Vibration Modes ◽  
Laser Crystallization ◽  
Hydrogen Binding ◽  
Local Vibration ◽  
Silicon Thin Films ◽  
The One ◽  
Hydrogen Effusion

ABSTRACTHydrogen bonding in laser crystallized boron and phosphorous doped polycrystalline silicon is investigated using Raman spectroscopy and hydrogen effusion measurements. During laser crystallization the intensity of the local vibration modes near 2000 and 2100 cm−1 decreases. The intensity of vibration mode at 2000 cm−1 decreases faster than the one at 2100 cm−1. From H effusion measurements, the hydrogen density-of-states (H DOS) distribution is derived. For undoped amorphous silicon the H DOS exhibits two prominent peaks at hydrogen binding energies of E– μH = –1.1 and –1.5 eV. In B doped a-Si:H the peak at –1.1 eV is less pronounced while in P doped a-Si:H the H binding energy increases by about 0.1 eV. In all samples laser crystallization causes an increase of the H binding energy by about 0.2 – 0.3 eV. However, the peaks in the H DOS observed in B-doped samples are preserved during laser crystallization.

scholarly journals Correlating hydrogen oxidation and evolution activity on platinum at different pH with measured hydrogen binding energy

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Wenchao Sheng ◽  
Zhongbin Zhuang ◽  
Minrui Gao ◽  
Jie Zheng ◽  
Jingguang G. Chen ◽  
...  
Keyword(s):  
Binding Energy ◽  
Hydrogen Oxidation ◽  
Hydrogen Binding

Different Approach to Estimation of Hydrogen-Binding Energy in Nanospace-Engineered Activated Carbons

2013 ◽  
Vol 118 (2) ◽  
pp. 955-961 ◽  
Author(s):  
L. Firlej ◽  
M. Beckner ◽  
J. Romanos ◽  
P. Pfeifer ◽  
B. Kuchta
Keyword(s):  
Binding Energy ◽  
Activated Carbons ◽  
Hydrogen Binding

Nearly warm white-light emission of silicon-rich amorphous silicon carbide

RSC Advances ◽  
2015 ◽  
Vol 5 (127) ◽  
pp. 105239-105247 ◽  
Author(s):  
Hung-Yu Tai ◽  
Chih-Hsien Cheng ◽  
Po-Sheng Wang ◽  
Chih-I Wu ◽  
Gong-Ru Lin
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Amorphous Silicon ◽  
White Light ◽  
Light Emission ◽  
White Light Emission ◽  
Amorphous Silicon Carbide ◽  
Warm White Light ◽  
Amorphous Si ◽  
Sic Film

An amorphous Si-rich SiC film with nearly warm white-light photoluminescence is synthesized to serve as a solid-state phosphorous material for white-lighting applications.

Structural Relaxation of Amorphous Silicon Induced by High Temperature Annealing

1990 ◽  
Vol 205 ◽  
Author(s):  
L. De Wit ◽  
S. Roorda ◽  
W.C. Sinke ◽  
F.W. Saris ◽  
A.J.M. Berntsen ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Relaxation Process ◽  
Structural Relaxation ◽  
High Temperature Annealing ◽  
Temperature Range ◽  
Amorphous Si ◽  
Anneal Temperature

Structural relaxation of amorphous Si is studied in the temperature range 500-850 °C using Raman spectroscopy. The minumum value for the Raman peakwidth that can be obtained is inversely proportional to the anneal temperature. The relaxation process is basically the same in a-Si prepared by ion implantation and by vacuum evaporation.

Theory of Hydrogen Complexes in Si

1990 ◽  
Vol 209 ◽  
Author(s):  
S. B. Zhang ◽  
W. B. Jackson
Keyword(s):  
Binding Energy ◽  
Raman Spectra ◽  
Experimental Results ◽  
Lattice Expansion ◽  
Strained Si ◽  
Amorphous Si ◽  
Gap States ◽  
Hydrogenated Amorphous ◽  
And Diffusion ◽  
Strained Bonds

ABSTRACTThe predominance of Si-H bonding and the origin of {111} platelets in hydrogenated Si remain important unsolvedproblems in the study of H in Si.Recent theoretical and experimental results indicate that H predominately enters the Si network in pairs. A promising diatomic H configuration consists of a bond centered H closely associated with an antibonding centered H. In this work, we show that adjacent diatomic H pairs have a binding energy of 0.2 eV/2H. The binding originates from relaxation of strained Si-Si backbonds. Further clustering of the H pairs eliminates all strained bonds, forming a hydrogenated platelet oriented along the {111} plane. The binding energy of 3.95 eV/2H for the platelet is 0.15 eV lower than that for interstitial H2 molecules in c-Si. Lattice expansion makes the platelets energetically more competitivewith the lowest energy Si-H bonding confi gration at hydrogenated Si (111) surfaces. These higher level complexes explainthe formation of platelets, Raman spectra, and absence of gap states in hydrogenated c- Si as well as the clustered phaseseen in NMR and of H evolution and diffusion in hydrogenated amorphous Si.

A Study on the Metal Induced Lateral Crystallization Behavior of Amorphous Silicon Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
Byung-Il Lee ◽  
Kwang-Ho Kim ◽  
Won-Cheol Jeong ◽  
Pyung-Su Ahn ◽  
Jin-Wook Shin ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Crystallization Behavior ◽  
Crystallization Rate ◽  
External Stress ◽  
Tem Analysis ◽  
Silicon Thin Films ◽  
Amorphous Si ◽  
Lateral Crystallization ◽  
Si Films

AbstractBasic mechanisms for both Ni- and Pd-metal induced lateral crystallization (MILC) are investigated. For both cases, tiny silicides were formed under the metal deposited area, and propagated toward amorphous Si films leaving crystallized Si behind at temperatures as low as 500 °C. Ni-MILC was influenced by Pd such that the lateral crystallization rate was enhanced, and the temperature for the lateral crystallization was lowered to 450 °C. Through TEM analysis and external stress experiments, it was found that the enhancement of the lateral crystallization rate was closely related to the compressive stress generated by the formation of nearby Pd2Si.

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