Silicon-Hydrogen Bonds in Boron and Phosphorous Doped Polycrystalline Silicon Thin Films

2004 ◽  
Vol 808 ◽  
Author(s):  
R. Saleh ◽  
N. H. Nickel
Keyword(s):  
Binding Energy ◽  
Polycrystalline Silicon ◽  
Binding Energies ◽  
Vibration Modes ◽  
Laser Crystallization ◽  
Hydrogen Binding ◽  
Local Vibration ◽  
Silicon Thin Films ◽  
The One ◽  
Hydrogen Effusion

ABSTRACTHydrogen bonding in laser crystallized boron and phosphorous doped polycrystalline silicon is investigated using Raman spectroscopy and hydrogen effusion measurements. During laser crystallization the intensity of the local vibration modes near 2000 and 2100 cm−1 decreases. The intensity of vibration mode at 2000 cm−1 decreases faster than the one at 2100 cm−1. From H effusion measurements, the hydrogen density-of-states (H DOS) distribution is derived. For undoped amorphous silicon the H DOS exhibits two prominent peaks at hydrogen binding energies of E– μH = –1.1 and –1.5 eV. In B doped a-Si:H the peak at –1.1 eV is less pronounced while in P doped a-Si:H the H binding energy increases by about 0.1 eV. In all samples laser crystallization causes an increase of the H binding energy by about 0.2 – 0.3 eV. However, the peaks in the H DOS observed in B-doped samples are preserved during laser crystallization.

scholarly journals Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy

2011 ◽  
Vol 2011 ◽  
pp. 1-14 ◽  
Author(s):  
Kuninori Kitahara ◽  
Toshitomo Ishii ◽  
Junki Suzuki ◽  
Takuro Bessyo ◽  
Naoki Watanabe
Keyword(s):  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Raman Microscopy ◽  
Laser Crystallization ◽  
Local Vibration ◽  
Optical Phonon Mode ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Si Films

Raman microscopy was applied to characterize polycrystalline silicon (poly-Si) on glass substrates for application as thin-film transistors (TFTs) integrated on electronic display panels. This study examines the crystallographic defects and stress in poly-Si films grown by industrial techniques: solid phase crystallization and excimer laser crystallization (ELC). To distinguish the effects of defects and stress on the optical-phonon mode of the Si–Si bond, a semiempirical analysis was performed. The analysis was compared with defect images obtained through electron microscopy and atomic force microscopy. It was found that the Raman intensity for the ELC film is remarkably enhanced by the hillocks and ridges located around grain boundaries, which indicates that Raman spectra mainly reflect the situation around grain boundaries. A combination of the hydrogenation of films and the observation of the Si-hydrogen local-vibration mode is useful to support the analysis on the defects. Raman microscopy is also effective for detecting the plasma-induced damage suffered during device processing and characterizing the performance of Si layer in TFTs.

The Role of Hydrogen in Laser Crystallized Polycrystalline Silicon

2002 ◽  
Vol 744 ◽  
Author(s):  
N. H. Nickel ◽  
K. Brendel
Keyword(s):  
Polycrystalline Silicon ◽  
Hydrogen Diffusion ◽  
Laser Crystallization ◽  
Hydrogen Binding ◽  
Amorphous Precursor ◽  
Pronounced Increase ◽  
Precursor Material ◽  
Residual Hydrogen ◽  
Hydrogenated Amorphous

ABSTRACTPolycrystalline silicon produced by laser crystallization of hydrogenated amorphous silicon contains large amounts of residual hydrogen. This reservoir of hydrogen can be used to passivate additional grain boundary defects by annealing the specimens at low temperatures in vacuum. Information on hydrogen bonding is obtained from hydrogen diffusion measurements. Laser crystallization results in a pronounced increase of the hydrogen binding energy in the resulting poly-Si samples compared to the amorphous precursor material. Fully crystallized poly-Si contains H concentrations of up to 17 at.%.

scholarly journals A NEW PHENOMENOLOGICAL FORMULA FOR GROUND-STATE BINDING ENERGIES

2011 ◽  
Vol 20 (01) ◽  
pp. 179-190 ◽  
Author(s):  
G. GANGOPADHYAY
Keyword(s):  
Binding Energy ◽  
Single Particle ◽  
Ground State ◽  
Liquid Drop ◽  
Alpha Decay ◽  
Binding Energies ◽  
Present Calculation ◽  
Mean Square ◽  
Liquid Drop Model ◽  
The One

A phenomenological formula based on liquid drop model has been proposed for ground-state binding energies of nuclei. The effect due to bunching of single particle levels has been incorporated through a term resembling the one-body Hamiltonian. The effect of n–p interaction has been included through a function of valence nucleons. A total of 50 parameters has been used in the present calculation. The root mean square (r.m.s.) deviation for the binding energy values for 2140 nuclei comes out to be 0.376 MeV, and that for 1091 alpha decay energies is 0.284 MeV. The correspondence with the conventional liquid drop model is discussed.

Boron Doped Polycrystalline Silicon Produced By Step-by-Step XeCl Excimer Laser Crystallization

2006 ◽  
Vol 910 ◽  
Author(s):  
Rosari Saleh ◽  
Norbert H Nickel
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Crystallization Process ◽  
Chemical Potential ◽  
Laser Crystallization ◽  
Hydrogen Density ◽  
Boron Doped ◽  
Excimer Laser Crystallization ◽  
Hydrogen Effusion

AbstractA series of boron doped polycrystalline silicon were produced using step-by-step laser crystallization process from amorphous silicon. The influence of doping concentrations on laser- induced dehydrogenation and crystallization of amorphous silicon and on hydrogen bonding have been investigated employing Raman spectroscopy and hydrogen effusion measurements. From hydrogen effusion spectra the hydrogen chemical potential is determined as a function of hydrogen concentration, which can be related to the hydrogen density-of-states distribution. The results from hydrogen effusion are consistent with the results obtained from Raman spectroscopy.

Influence of Laser Annealing on Hydrogen Bonding in Disordered Silicon Thin Films

2003 ◽  
Vol 762 ◽  
Author(s):  
N. H. Nickel ◽  
K. Brendel
Keyword(s):  
Thin Films ◽  
Hydrogen Bonding ◽  
Low Temperatures ◽  
Deposition Temperature ◽  
Laser Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous ◽  
Hydrogen Effusion

AbstractThe influence of laser dehydrogenation and crystallization of hydrogenated amorphous silicon (a-Si:H) on H bonding is investigated. Depending on the deposition temperature the amorphous starting material contains a H concentration of up to 44 at.%. Laser crystallization lowers the H content significantly. Fully crystallized poly-Si contains H concentrations of up to 17 at.%. This reservoir of hydrogen can be used to passivate additional grain boundary defects by annealing the specimens at low temperatures in vacuum. Information on hydrogen bonding is obtained from hydrogen effusion measurements.

Fabrication of polycrystalline silicon thin films on glass substrates using fiber laser crystallization

2009 ◽  
Vol 517 (14) ◽  
pp. 3971-3974 ◽  
Author(s):  
Vinh Ai Dao ◽  
Kuymin Han ◽  
Jongkyu Heo ◽  
Dohyeon Kyeong ◽  
Jaehong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Fiber Laser ◽  
Polycrystalline Silicon ◽  
Laser Crystallization ◽  
Glass Substrates ◽  
Silicon Thin Films

Polycrystalline Silicon Thin Films Produced by Interference Laser Crystallization of Amorphous Silicon

1999 ◽  
Vol 38 (Part 2, No. 10A) ◽  
pp. L1083-L1084 ◽  
Author(s):  
Bohuslav Rezek ◽  
Christoph E. Nebel ◽  
Martin Stutzmann
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Laser Crystallization ◽  
Silicon Thin Films
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