C-V and Capacitance Transient Analysis of Self-Implanted Amorphous Si Layers Regrown by Swept-Line Electron Beam (Sled) Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
K. J. Soda ◽  
R. Y. Dejule ◽  
B. G. Streetman
Keyword(s):  
Electron Beam ◽  
Amorphous Silicon ◽  
Transient Analysis ◽  
Similar Data ◽  
Annealed Material ◽  
Amorphous Si ◽  
Dopant Redistribution ◽  
Capacitance Transient

ABSTRACTIt is demonstrated that swept-line electron beam (SLEB) annealing can be successfully employed to recrystallize relatively deep (∼0.5 μm) Si-implanted amorphous silicon layers. DLTS and C-V analysis of these layers show significant reductions in concentration of residual defects and magnitude of dopant redistribution effects. For comparison, similar data for furnace annealed material is also presented.

Enhanced crystallization and phase transformation of amorphous silicon nitride under high pressure

2001 ◽  
Vol 16 (1) ◽  
pp. 67-75 ◽  
Author(s):  
Ya-Li Li ◽  
Yong Liang ◽  
Fen Zheng ◽  
Xian-Feng Ma ◽  
Suo-Jing Cui ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Transformation ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystallization Temperature ◽  
Amorphous Materials ◽  
Normal Pressure ◽  
Nucleation And Growth ◽  
Amorphous Silicon Nitride ◽  
Amorphous Si

The crystallization and phase transformation of amorphous Si3N4 ceramics under high pressure (1.0–5.0 GPa) between 800 and 1700 °C were investigated. A greatly enhanced crystallization and α–β transformation of the amorphous Si3N4 ceramics were evident under the high pressure, as characterized by that, at 5.0 GPa, the amorphous Si3N4 began to crystallize at a temperature as low as 1000 °C (to transform to a modification). The subsequent a–b transformation occurred completed between 1350 and 1420 °C after only 20 min of pressing at 5.0 GPa. In contrast, under 0.1 MPa N2, the identical amorphous materials were stable up to 1400 °C without detectable crystallization, and only a small amount of a phase was detected at 1500 °C. The crystallization temperature and the a–b transformation temperatures are reduced by 200–350 °C compared to that at normal pressure. The enhanced phase transformations of the amorphous Si3N4 were discussed on the basis of thermodynamic and kinetic consideration of the effects of pressure on nucleation and growth.

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Crystallization of amorphous silicon films via electron beam exposure

2015 ◽  
Vol 16 (3) ◽  
pp. 169-174
Author(s):  
Byeong-Yeon Moon ◽  
Jung Su Kang ◽  
Seon Yong Park ◽  
Kyu Chang Park
Keyword(s):  
Electron Beam ◽  
Amorphous Silicon ◽  
Silicon Films

Capacitance Transient Analysis of Different-Sized InAs/GaAs Quantum Dot Structures

2011 ◽  
Vol 11 (7) ◽  
pp. 6504-6509 ◽  
Author(s):  
Hooyoung Song ◽  
Jin Soak Kim ◽  
Eun Kyu Kim ◽  
Sang Jun Lee ◽  
Sam Kyu Noh
Keyword(s):  
Quantum Dot ◽  
Transient Analysis ◽  
Gaas Quantum Dot ◽  
Capacitance Transient

Effect of Contacts on Capacitance Transient Measurements in N-Type Hydrogenated Amorphous Silicon

1995 ◽  
Vol 377 ◽  
Author(s):  
W. B. Jackson ◽  
N. M. Johnson ◽  
J. Walker
Keyword(s):  
Amorphous Silicon ◽  
Pulse Duration ◽  
Ohmic Contacts ◽  
Hydrogenated Amorphous Silicon ◽  
Charge Injection ◽  
Current Injection ◽  
Anomalous Dependence ◽  
Capacitance Transient ◽  
Hydrogenated Amorphous ◽  
Transient Measurements

ABSTRACTMeasurement of the dependence of emission capacitance transients on filling pulse duration has been extended to devices with Ohmic back contacts. Capacitance transients on devices possessing identical bulk 20-ppm P doped a-Si:H but either Ohmic contacts or blocking contacts were compared. The devices with blocking contacts completely reproduced in quantitative detail the previously observed anomalous dependence of capacitance transients on filling pulse duration. The diodes with Ohmic contacts showed no evidence of the anomalous filling pulse effect even for light-degraded, resistive samples. Current injection measurements show that blocking contacts delay the charge injection into the device by about 10–100 msec.

Optical Properties of Amorphous Silicon-Yttrium Films

2005 ◽  
Vol 862 ◽  
Author(s):  
Shmyryeva Alexandra N. ◽  
Semikina Tetyana V.
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Amorphous Silicon ◽  
Optical Microscopy ◽  
Electron Beam Evaporation ◽  
Mixed Phase ◽  
Ir Reflection ◽  
Substrate Temperatures

AbstractThis paper presents and discusses the results of measuring IR reflection and ellipsometric parameters, optical microscopy and AFM the mixed phase of amorphous Si:Y films with microcrystalline inclusions. These films were obtained by electron-beam evaporation of siliconyttrium alloys with different Y concentration (5-30 %) at two substrate temperatures (370 and 620 °C).

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