Variation of the Photoelectric Threshold of Boron Doped Diamond Films

1998 ◽  
Vol 509 ◽  
Author(s):  
I.A. Akwani ◽  
E.D. Sosa ◽  
J. Bernhard ◽  
S.C. Lim ◽  
R.E. Stallcup ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doping ◽  
Boron Doped Diamond ◽  
Si Substrates ◽  
Band Emission ◽  
Boron Doped ◽  
Photoelectric Threshold

AbstractBoron doped polycrystalline diamond films grown on p-type single-crystal Si substrates using chemical vapor deposition with a gas mixture of hydrogen, methane and diborane were characterized with scanning electron microscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, Raman spectroscopy and photoelectric current measurements. The energy distributions are not sensitive to boron doping for diborane concentrations from 0 to 4.75 ppm, although the boron doping modifies the surface morphology and the photoemission intensity. The photoemission intensity is high where the microcrystalline content is highest (at diborane concentrations of 2.91 and 4.75 ppm. The photoelectric threshold is found to be at 4.38 eV, in agreement with earlier measurements. The present results are characteristic of valence band emission at 4.38, 4.63, 4.92, 5.12 and 5.30 eV for incident photons between 4.87 and 5.63 eV.

Growth and oxidation of boron-doped diamond films

1995 ◽  
Vol 10 (6) ◽  
pp. 1448-1454 ◽  
Author(s):  
E.N. Farabaugh ◽  
L. Robins ◽  
A. Feldman ◽  
Curtis E. Johnson
Keyword(s):  
Boron Concentration ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doping ◽  
Deposition Process ◽  
X Ray Diffraction ◽  
Boron Doped Diamond ◽  
Oxidation Rates ◽  
Boron Doped ◽  
Hot Filament

Boron-doped diamond films have been grown by the hot filament chemical vapor deposition process. The feed gas was a mixture of argon, bubbled through a solution of B2O3 in ethanol, and hydrogen. The highest growth rate was 0.7 μm/h. The boron concentration in the films depended on the concentration of B2O3 in the ethanol. The highest boron doping level, as measured by secondary ion mass spectroscopy, was 6300 atomic ppm. Raman spectroscopy and x-ray diffraction both confirmed the presence of crystalline diamond in the films. The frequency of the diamond Raman line decreased with increasing boron concentration. This shift may arise from an interaction of the charged carriers (holes) produced by the boron doping and the Raman-active optic phonon. The oxidation rates of doped and undoped films were measured by thermogravimetric analysis at 700 °C in flowing high purity oxygen. Films with a boron concentration of 6300 ppm oxidized at one-tenth the rate of undoped diamond. A layer of B2O3, detected on the surface of an oxidized B-doped film, is believed to act as a protective barrier that decreases the oxidation rate.

The effect of boron doping and gamma irradiation on the structure and properties of microwave chemical vapor deposited boron-doped diamond films

2009 ◽  
Vol 24 (4) ◽  
pp. 1498-1512 ◽  
Author(s):  
S. Gupta ◽  
M. Muralikiran ◽  
J. Farmer ◽  
L.R. Cao ◽  
R.G. Downing
Keyword(s):  
Thin Films ◽  
Electrical Property ◽  
Gamma Irradiation ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doping ◽  
Phase Iii ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Boron Doped

We investigated the effects of gamma irradiation doses of 50, 100, and 103 kGy on boron-doped diamond (BDD) thin films synthesized using microwave plasma-assisted chemical vapor deposition with varying boron concentrations of [B]/[C]gas = 100, 1000, 2000, and 4000 ppm. The diamond thin films were characterized prior to and post-irradiation and the influence was assessed in terms of morphology, structure, and physical properties using scanning electron microscopy, atomic force microscopy, x-ray diffraction, vibrational spectroscopy (Raman and IR), x-ray photoelectron spectroscopy, and electrical measurement techniques. The results clearly showed that the response of gamma irradiation on BDD films was distinctive compared to those of undoped diamond films with changes in electronic behavior from metallic (>1019 to 1020 cm–3) to semiconducting (≤1019 cm–3), especially in the case of heavily boron-doped diamond films demonstrated by micro-Raman spectroscopy and electrical property characteristics. In fact, this modification in electrical property behavior induced by “gamma conditioning” can be effectively used to fine control boron doping in chemically vapor deposited diamond much needed for various electronic devices. The “gamma conditioning” refers to material processing by radiation which helps to passivate electrically active boron and defects with hydrogen migration thus fine tunes the boron acceptor concentration albeit that this is difficult to achieve during BDD film deposition. In addition, the results also indicate that almost all of the BDD films studied hereby tend to reach a state of damage saturation when submitted to gamma irradiation of 103 kGy. We discuss our novel findings in terms of the interplay of boron-hydrogen in diamond with possible multiple scenarios: (i) the generation of point/Frenkel defects due to Compton scattered electrons, (ii) the formation of a nonmetallic boron-rich borocarbide (e.g., B13C2) phase, (iii) the passivation of electrically active acceptor (B) sites due to the invariable presence of H in the grains and at the grain boundaries, (iv) the desorption of H from the diamond surface, and (v) the “priming or pumping” effect, which improves the electronic properties by compensating for the shallow boron acceptors to produce semiconducting/insulating material, verified by the cold neutron depth profiling technique.

Characterization of undoped and boron-doped polycrystalline diamond films synthesized by hot-filament chemical vapor deposition using methanol

1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Hot Filament

Determination of Boron Concentration in Doped Diamond Films

2011 ◽  
Vol 1282 ◽  
Author(s):  
S.N. Demlow ◽  
T.A. Grotjohn ◽  
T. Hogan ◽  
M. Becker ◽  
J. Asmussen
Keyword(s):  
Boron Concentration ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doped Diamond ◽  
Dopant Activation ◽  
Boron Doped ◽  
Boron Dopant ◽  
Boron Acceptor

ABSTRACTThe electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at a pressure of 160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 0-0.25 ppm, and are compared to those grown previously with 1-10 ppm. The boron acceptor concentration is investigated using infrared absorption, and compared to the boron concentration obtained by SIMS. A four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.

Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition

2010 ◽  
Vol 82 (8) ◽  
Author(s):  
Akihiro Kawano ◽  
Hitoshi Ishiwata ◽  
Shingo Iriyama ◽  
Ryosuke Okada ◽  
Takahide Yamaguchi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Insulator Transition ◽  
Boron Doped Diamond ◽  
Boron Doped

Investigating point defects in irradiated boron-doped diamond films by temperature-dependent electrical properties and scanning tunneling microscopy and spectroscopy

2010 ◽  
Vol 25 (3) ◽  
pp. 444-457 ◽  
Author(s):  
Sanju Gupta ◽  
John Farmer ◽  
Dario Daghero ◽  
Renato Gonnelli
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Point Defects ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Dependent ◽  
Boron Doped Diamond ◽  
Boron Doped

We report temperature-dependent electrical resistivity (or dc conductivity, σdc) down to 4 K for pristine and gamma-irradiated microwave plasma-assisted chemical vapor-deposited boron-doped diamond films with [B]/[C]gas = 4000 ppm to gain insights into the nature of conduction mechanism, distribution, and kinetics of point defects generated due to gamma irradiation prompted by the article [Gupta et al., J. Mater. Res.24, 1498 (2009)]. The pristine samples exhibit typical metallic conduction up to 50 K and with reduction in temperature to 25 K, the σdc decreases monotonically followed by saturation at 4 K, suggesting “disordered” metal or “localized” behavior. For irradiated films, continuous increasing resistivity with decreasing temperature demonstrates semiconducting behavior with thermal activation/hopping conduction phenomena. It is intriguing to propose that irradiation leads to substantial hydrogen redistribution leading to unexpected low-temperature resistivity behavior. Scanning tunneling microscopy/spectroscopy helped to illustrate local grain and grain boundary effects.

Magnetoresistance of boron-doped chemical vapor deposition polycrystalline diamond films

2002 ◽  
Vol 11 (1) ◽  
pp. 49-52 ◽  
Author(s):  
Y.J Fei ◽  
D Yang ◽  
Xue Wang ◽  
Q.B Meng ◽  
Xuejin Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped

SPATIAL VARIATION OF TUNNELING SPECTRA IN (111)-ORIENTED FILMS OF BORON-DOPED DIAMOND PROBED BY STM/STS

2013 ◽  
Vol 27 (15) ◽  
pp. 1362014 ◽  
Author(s):  
TERUKAZU NISHIZAKI ◽  
TAKAHIKO SASAKI ◽  
NORIO KOBAYASHI ◽  
YOSHIHIKO TAKANO ◽  
MASANORI NAGAO ◽  
...  
Keyword(s):  
Diamond Films ◽  
Boron Doping ◽  
Spatial Variations ◽  
Scanning Tunneling ◽  
Tunneling Conductance ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Oriented Films ◽  
Characteristic Features

We report on scanning tunneling microscopy/spectroscopy (STM/STS) experiments on boron-doped diamond films. The tunneling conductance dI/dV spectra measured on the (111)-oriented surface show spatial variations which distribute irrespective of the surface morphology. The spatial variations are discussed in terms of characteristic features of the superconductivity under the condition of the considerable disorder by the boron doping.

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